High Speed, Integrated Ultrasound Driver IC

MD1712 is a two-channel, five-level, high voltage and high speed transmitter driver IC. It is designed for medical ultrasound imaging applications, but can also be used for metal flaw detection, Non-Destructive Testing (NDT), and for driving piezoelectric transducers.The MD1712 is a two-channel logi Drives two ultrasound transducer channels\nGenerates five-level waveform\nDrives 12 high voltage MOSFETs\n±2.0A source and sink peak current\nUp to 20MHz output frequency\n12V/ns slew rate\n±3.0ns matched delay times\nSecond harmonic is less than -40dB\nTwo separate gate drive voltages\n1.8 to 3.3V ;

2-Channel, 5-LEVEL, High Speed Ultrasound Driver

MD1715, paired with TC8020, forms a two channel, five level, high voltage, high speed transmit pulser chip set. The chip set is designed for medical ultrasound imaging applications, but can also be used for metal flaw detection, Non-Destructive Testing (NDT), and piezoelectric transducer drivers.Th Advanced CMOS technology\n±4.75 to 12.9V gate drive voltage\n2A output source and sink current\n6.5ns rise and fall time with 1nF load\n10ns propagation delay\n±2ns matched delay times\n12 matched channels\n1.8V to 3.3V CMOS logic interface\nSmart logic threshold\nLow inductance package;

High Speed, Integrated Ultrasound Driver IC

文件：585.04 Kbytes Page：12 Pages

High Speed, Integrated Ultrasound Driver IC

文件：472.96 Kbytes Page：10 Pages

HIGH SPEED INTEGRATED ULTRASOUND DRIVER IC

文件：192.16 Kbytes Page：9 Pages

High Speed, Integrated Ultrasound Driver IC

文件：472.96 Kbytes Page：10 Pages

High Speed, Integrated Ultrasound Driver IC

文件：585.04 Kbytes Page：12 Pages

HIGH SPEED INTEGRATED ULTRASOUND DRIVER IC

文件：192.16 Kbytes Page：9 Pages

High Speed, Integrated Ultrasound Driver IC

文件：472.96 Kbytes Page：10 Pages

HIGH SPEED INTEGRATED ULTRASOUND DRIVER IC

High Speed, Integrated Ultrasound Driver IC

文件：472.96 Kbytes Page：10 Pages

High Speed, Integrated Ultrasound Driver IC

文件：585.04 Kbytes Page：12 Pages

High Speed, Integrated Ultrasound Driver IC

文件：585.04 Kbytes Page：12 Pages

封装/外壳：48-LQFP 包装：管件 描述：IC ULTRASOUND DRIVER 48LQFP 集成电路（IC） 电源管理 - 专用

High Speed, Integrated Ultrasound Driver IC

文件：585.04 Kbytes Page：12 Pages

封装/外壳：48-VFQFN 裸露焊盘 包装：管件 描述：IC ULTRASOUND DRIVER 48VQFN 集成电路（IC） 电源管理 - 专用

High Speed, Integrated Ultrasound Driver IC

文件：585.04 Kbytes Page：12 Pages

High Speed, Integrated Ultrasound Driver IC

文件：901.27 Kbytes Page：12 Pages

High Speed, Integrated Ultrasound Driver IC

文件：901.27 Kbytes Page：12 Pages

High Speed, Integrated Ultrasound Driver IC

文件：901.27 Kbytes Page：12 Pages

Two Channel, Five Level, High Speed Ultrasound Driver IC

文件：721.97 Kbytes Page：9 Pages

Two Channel, Five Level, High Speed Ultrasound Driver IC

文件：721.97 Kbytes Page：9 Pages

Three Channel, Three Level, High Speed Ultrasound Driver IC

文件：802.96 Kbytes Page：8 Pages

3-Channel 3-Level High-Speed Ultrasound Driver IC

文件：769.15 Kbytes Page：16 Pages

3-Channel 3-Level High-Speed Ultrasound Driver IC

文件：769.15 Kbytes Page：16 Pages

Three Channel, Three Level, High Speed Ultrasound Driver IC

文件：802.96 Kbytes Page：8 Pages

POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171,

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60–80 VOLTS 12.5 WATTS . . . designed for low power audio amplifier and low current, high speed switching applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 60 Vdc — MJE171, MJE181 VCEO(sus) = 80 Vdc — MJE172, MJE182

Silicon NPN Transistor Audio/Video Amplifier

Description: The NTE171 is a silicon NPN transistor in a TO202 type case designed for high–voltage TV video and chroma output circuits, high–voltage linear amplifiers, and high–voltage transistor regulators. Features: • High Collector–Emitter Breakdown Voltage Voltage: V(BR)CER = 300V @

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE