2-Channel, 5-LEVEL, High Speed Ultrasound Driver

MD1715, paired with TC8020, forms a two channel, five level, high voltage, high speed transmit pulser chip set. The chip set is designed for medical ultrasound imaging applications, but can also be used for metal flaw detection, Non-Destructive Testing (NDT), and piezoelectric transducer drivers.Th Advanced CMOS technology\n±4.75 to 12.9V gate drive voltage\n2A output source and sink current\n6.5ns rise and fall time with 1nF load\n10ns propagation delay\n±2ns matched delay times\n12 matched channels\n1.8V to 3.3V CMOS logic interface\nSmart logic threshold\nLow inductance package;

Two Channel, Five Level, High Speed Ultrasound Driver IC

文件：721.97 Kbytes Page：9 Pages

Two Channel, Five Level, High Speed Ultrasound Driver IC

文件：721.97 Kbytes Page：9 Pages

封装/外壳：40-VFQFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC ULTRASOUND DRIVER 40VQFN 集成电路（IC） 电源管理 - 专用

封装/外壳：40-VFQFN 裸露焊盘 包装：卷带（TR） 描述：IC ULTRASOUND DRIVER 40VQFN 集成电路（IC） 电源管理 - 专用

EPITAXIAL PLANAR PNP TRANSISTOR (POWER AMPLIFIER, POWER SWITCHING)

POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES • Low Collector Saturation Voltage : VCE(sat)=-0.5V(Max.) (IC=-1A) • High Speed Switching Time : tstg=1 μS(Typ.) • Complementary to KTC2814.

Integrated Circuit 8-Circuit Display Driver

Description: The NTE1715 is an integrated circuit in an 18–Lead DIP type package designed for high–breakown fluorescent display tube drive. Features: • Built–In 8 Circuits • Output Incorporating Pull–Down Resistor for Direct Fluorescent Display Tube Drive • Direct Input for CMOS o

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES • Low on-resistance RDS(on)1 = 8.5 mΩ TYP. (VGS = –10 V, ID = –6.0 A) RDS(on)2 = 11.0 mΩ TYP. (VGS = –4.5

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES • Low on-resistance RDS(on)1 = 8.5 mΩ TYP. (VGS = –10 V, ID = –6.0 A) RDS(on)2 = 11.0 mΩ TYP. (VGS = –4.5

Complementary Switch FET Drivers

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