3-Channel, 3-LEVEL, High Speed Ultrasound Driver IC

MD1716, paired with TC8020, forms a three channel, three level, high voltage, high speed, transmit pulser chip set. The chip set is designed for medical ultrasound imaging applications but can also be used for metal flaw detection, Non-Destructive Testing (NDT), and piezoelectric transducer drivers Advanced CMOS technology\n4.5 to 12.5V power supply voltage\n2.0A output source and sink current\n6.5ns rise and fall time with 1.0nF load\n10ns propagation delay\n±2ns matched delay times\n12 matched channels\n1.8 to 3.3V CMOS logic interface\nSmart logic threshold\nLow inductance package;

3-Channel 3-Level High-Speed Ultrasound Driver IC

文件：769.15 Kbytes Page：16 Pages

Three Channel, Three Level, High Speed Ultrasound Driver IC

文件：802.96 Kbytes Page：8 Pages

Three Channel, Three Level, High Speed Ultrasound Driver IC

文件：802.96 Kbytes Page：8 Pages

封装/外壳：40-VFQFN 裸露焊盘 包装：卷带（TR） 描述：IC ULTRASOUND DRIVER 40VQFN 集成电路（IC） 电源管理 - 专用

3-Channel 3-Level High-Speed Ultrasound Driver IC

文件：769.15 Kbytes Page：16 Pages

EPITAXIAL PLANAR PNP TRANSISTOR (HIGH VOLTAGE, TELEPHONE POWER-SUPPLY USE)

HIGH-VOLTAGE SWITCHING TRANSISTOR ​​​​​​​TELEPHONE POWER-SUPPLY USE. FEATURES • High Breakdown Voltage : VCEO=-600V • Low VCE(sat) (Typ. -0.25V((IC=-300mA, IB=-60mA). • Fast Switching. • Wide SOA.

Integrated Circuit Reversible Motor Driver for VCR

Features: • Supply Voltage Range: 6V to 18V • Power Dissipation: 2200mW • Output Motor Driving Current up to 1600mA • Two Control Logic Inputs Allow Switching of Three Output States: Forward Reverse Braking • Low Standby Current • Adjustable Output Voltage Enabl

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES • Low on-resistance RDS(on)1 = 12.5 mΩ TYP. (VGS = –10 V, ID = –4 A) RDS(on)2 = 17.0 mΩ TYP. (VGS = –4.5 V, ID = –4 A) RD

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES • Low on-resistance RDS(on)1 = 12.5 mΩ TYP. (VGS = –10 V, ID = –4 A) RDS(on)2 = 17.0 mΩ TYP. (VGS = –4.5 V, ID = –4 A) RD

High-Speed, Adjustable, Synchronous Step-Down Controllers with Integrated Voltage Positioning

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