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MC14049BD价格

参考价格:¥0.5889

型号:MC14049BDG 品牌:ON 备注:这里有MC14049BD多少钱,2026年最近7天走势,今日出价,今日竞价,MC14049BD批发/采购报价,MC14049BD行情走势销售排行榜,MC14049BD报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MC14049BD

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

ONSEMI

安森美半导体

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

ONSEMI

安森美半导体

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired.

ONSEMI

安森美半导体

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

ONSEMI

安森美半导体

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

ONSEMI

安森美半导体

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired.

ONSEMI

安森美半导体

封装/外壳:16-SOIC(0.154",3.90mm 宽) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC INVERTER 6CH 1-INP 16SOIC 集成电路(IC) 门和反相器

ONSEMI

安森美半导体

Hex Buffer

文件:148.25 Kbytes Page:9 Pages

ONSEMI

安森美半导体

Hex Buffer

文件:131.31 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Hex Buffer

文件:131.31 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Hex Buffer

文件:148.25 Kbytes Page:9 Pages

ONSEMI

安森美半导体

封装/外壳:16-SOIC(0.154",3.90mm 宽) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC INVERTER 6CH 1-INP 16SOIC 集成电路(IC) 门和反相器

ONSEMI

安森美半导体

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

ONSEMI

安森美半导体

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

ONSEMI

安森美半导体

Hex Buffers

The MC14049UB hex inverter/buffer is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. This complementary MOS device finds primary use where low power dissipation and/or high noise immunity is desired. This device provides logic−level conversio

ONSEMI

安森美半导体

Hex Buffers

The MC14049UB hex inverter/buffer is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. This complementary MOS device finds primary use where low power dissipation and/or high noise immunity is desired. This device provides logic−level conversio

ONSEMI

安森美半导体

Hex Buffers

The MC14049UB hex inverter/buffer is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. This complementary MOS device finds primary use where low power dissipation and/or high noise immunity is desired. This device provides logic−level conversio

ONSEMI

安森美半导体

MC14049BD产品属性

  • 类型

    描述

  • 型号

    MC14049BD

  • 功能描述

    缓冲器和线路驱动器 3-18V Hex CMOS

  • RoHS

  • 制造商

    Micrel

  • 输入线路数量

    1

  • 输出线路数量

    2

  • 极性

    Non-Inverting

  • 电源电压-最大

    +/- 5.5 V

  • 电源电压-最小

    +/- 2.37 V

  • 最大工作温度

    + 85 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    MSOP-8

  • 封装

    Reel

更新时间:2026-5-14 17:52:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MOTOROLA
23+
SOP16
3500
绝对全新原装!现货!特价!请放心订购!
ON(安森美)
23+
SOIC-16
10549
公司只做原装正品,假一赔十
ON(安森美)
24+
N/A
18000
原装正品现货支持实单
MOT
22+
SOP
5000
只做原装鄙视假货15118075546
ON(安森美)
23+
标准封装
5000
原厂原装现货订货价格优势终端BOM表可配单提供样品
ON
23+
NA
396
专做原装正品,假一罚百!
ON(安森美)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ON
26+
TO-220
890000
一级总代理商原厂原装大批量现货 一站式服务
MOTOROLA
22+
SOP
3000
原装正品,支持实单
MOTOROLA
25+
SOP16
4500
全新原装、诚信经营、公司现货销售!

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