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MC14049BD价格

参考价格:¥0.5889

型号:MC14049BDG 品牌:ON 备注:这里有MC14049BD多少钱,2026年最近7天走势,今日出价,今日竞价,MC14049BD批发/采购报价,MC14049BD行情走势销售排行榜,MC14049BD报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MC14049BD

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

ONSEMI

安森美半导体

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

ONSEMI

安森美半导体

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired.

ONSEMI

安森美半导体

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

ONSEMI

安森美半导体

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

ONSEMI

安森美半导体

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired.

ONSEMI

安森美半导体

封装/外壳:16-SOIC(0.154",3.90mm 宽) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC INVERTER 6CH 1-INP 16SOIC 集成电路(IC) 门和反相器

ONSEMI

安森美半导体

Hex Buffer

文件:148.25 Kbytes Page:9 Pages

ONSEMI

安森美半导体

Hex Buffer

文件:131.31 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Hex Buffer

文件:131.31 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Hex Buffer

文件:148.25 Kbytes Page:9 Pages

ONSEMI

安森美半导体

封装/外壳:16-SOIC(0.154",3.90mm 宽) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC INVERTER 6CH 1-INP 16SOIC 集成电路(IC) 门和反相器

ONSEMI

安森美半导体

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

ONSEMI

安森美半导体

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

ONSEMI

安森美半导体

Hex Buffers

The MC14049UB hex inverter/buffer is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. This complementary MOS device finds primary use where low power dissipation and/or high noise immunity is desired. This device provides logic−level conversio

ONSEMI

安森美半导体

Hex Buffers

The MC14049UB hex inverter/buffer is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. This complementary MOS device finds primary use where low power dissipation and/or high noise immunity is desired. This device provides logic−level conversio

ONSEMI

安森美半导体

Hex Buffers

The MC14049UB hex inverter/buffer is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. This complementary MOS device finds primary use where low power dissipation and/or high noise immunity is desired. This device provides logic−level conversio

ONSEMI

安森美半导体

MC14049BD产品属性

  • 类型

    描述

  • 型号

    MC14049BD

  • 功能描述

    缓冲器和线路驱动器 3-18V Hex CMOS

  • RoHS

  • 制造商

    Micrel

  • 输入线路数量

    1

  • 输出线路数量

    2

  • 极性

    Non-Inverting

  • 电源电压-最大

    +/- 5.5 V

  • 电源电压-最小

    +/- 2.37 V

  • 最大工作温度

    + 85 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    MSOP-8

  • 封装

    Reel

更新时间:2026-7-23 15:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON(安森美)
26+
SOIC-16_150mil
10548
原厂订货渠道,支持账期,一站式服务!
PHOENIX
24+
84000
只做原装进口现货
PHOENIX/菲尼克斯
2450+
DIP12
9850
只做原厂原装正品现货或订货假一赔十!
PHOENIX
23+
Connector
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
ON
25+
SOP-16
6500
十七年专营原装现货一手货源,样品免费送
ON
24+
SOP3.9MM
47500
Phoenix/菲尼克斯
23/24+
1844294
5215
优势特价 原装正品 全产品线技术支持
PHOENIXCONTACT
2447
NA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
菲尼克斯连接器
247825
一级代理 原装正品 假一罚十 实单带接受价来谈 只
ON
25+
SOP16
14600
绝对全新原装公司现货!实单价格好谈!订购热线:0755-83243024

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