| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
B-Suffix Series CMOS Gates The B Series logic gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 Vdc to 18 Vdc • All | ONSEMI 安森美半导体 |   | ||
B-Suffix Series CMOS Gates The B Series logic gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 Vdc to 18 Vdc • All | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates The B Series logic gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 Vdc to 18 Vdc • All | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates The B Series logic gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 Vdc to 18 Vdc • All | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates The B Series logic gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 Vdc to 18 Vdc • All | ONSEMI 安森美半导体 | |
| 替换型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CMOS NAND Gates | INTERSIL | INTERSIL | | |
Dual 4-Input NOR(NAND) Gate | NSC 国半 | NSC | | |
Dual 4-Input NOR(NAND) Gate | NSC 国半 | NSC | | |
CMOS NAND GATES | TI 德州仪器 | TI | | |
CMOS NAND GATES | TI 德州仪器 | TI | | |
The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages | TI 德州仪器 | TI | | |
NAND GATES | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | | |
NAND GATES | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | | |
Dual 4-input NAND Gate | HITACHIHitachi Semiconductor 日立日立公司 | HITACHI | | |
Dual 4-input NAND gate | PHILIPS 飞利浦 | PHILIPS | | |
Dual 4-input NAND gate | PHILIPS 飞利浦 | PHILIPS | | |
B-Suffix Series CMOS Gates | MOTOROLA 摩托罗拉 | MOTOROLA | | |
B-Suffix Series CMOS Gates | MOTOROLA 摩托罗拉 | MOTOROLA | | |
B-Suffix Series CMOS Gates | ONSEMI 安森美半导体 | ONSEMI | | |
B−Suffix Series CMOS Gates | ONSEMI 安森美半导体 | ONSEMI | | |
COMPLEMENTARY METAL OXIDE SILICON | NTE | NTE | | |
INPUT NAND GATE | RANDE | RANDE | | |
C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC | TOSHIBA 东芝 | TOSHIBA | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ONSEMI |
25+ |
PDIP |
18746 |
样件支持,可原厂排单订货! |
|||
ONSEMI |
25+ |
PDIP |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ON |
2016+ |
DIP-14 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ON/安森美 |
25+ |
DIP |
12360 |
ON/安森美原装特价MC14012BCP即刻询购立享优惠#长期有货 |
|||
MOT |
24+/25+ |
247 |
原装正品现货库存价优 |
||||
MOTOROLA/摩托罗拉 |
2450+ |
DIP-14 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
ON |
23+ |
14-DIP |
65600 |
||||
ON(安森美) |
23+ |
19183 |
公司只做原装正品,假一赔十 |
||||
MOT |
DIP14 |
53650 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
MC14012BCPDS |
25+ |
2050 |
2050 |
MC14012BAL规格书下载地址
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2013-1-16
DdatasheetPDF页码索引
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