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MC14012B价格
参考价格：￥4.7672
型号：MC14012BCP 品牌：ON 备注：这里有MC14012B多少钱，2025年最近7天走势，今日出价，今日竞价，MC14012B批发/采购报价，MC14012B行情走势销售排行榜，MC14012B报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MC14012B | B-Suffix Series CMOS Gates The B Series logic gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 Vdc to 18 Vdc • All | ONSEMI 安森美半导体 |   | |
MC14012B | B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered | Motorola 摩托罗拉 | | |
MC14012B | B?뭆uffix Series CMOS Gates 文件：150.29 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | |
MC14012B | Dual 4-Input NAND Gates 文件：105.07 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | |
B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered | Motorola 摩托罗拉 | | ||
B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered | Motorola 摩托罗拉 | | ||
B-Suffix Series CMOS Gates The B Series logic gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 Vdc to 18 Vdc • All | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates The B Series logic gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 Vdc to 18 Vdc • All | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered | Motorola 摩托罗拉 | | ||
B-Suffix Series CMOS Gates The B Series logic gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 Vdc to 18 Vdc • All | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates The B Series logic gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 Vdc to 18 Vdc • All | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates The B Series logic gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 Vdc to 18 Vdc • All | ONSEMI 安森美半导体 | | ||
B?뭆uffix Series CMOS Gates 文件：150.29 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
Dual 4-Input NAND Gates 文件：127.72 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Dual 4-Input NAND Gates 文件：105.07 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
B?뭆uffix Series CMOS Gates 文件：150.29 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：14-DIP（0.300"，7.62mm） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC GATE NAND 2CH 4-INP 14DIP 集成电路（IC） 门和反相器 | ONSEMI 安森美半导体 | | ||
Dual 4-Input NAND Gates 文件：127.72 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
B?뭆uffix Series CMOS Gates 文件：150.29 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：14-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC GATE NAND 2CH 4-INP 14SOIC 集成电路（IC） 门和反相器 | ONSEMI 安森美半导体 | | ||
B?뭆uffix Series CMOS Gates 文件：150.29 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
Dual 4-Input NAND Gates 文件：105.07 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
Dual 4-Input NAND Gates 文件：127.72 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
B?뭆uffix Series CMOS Gates 文件：150.29 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
B?뭆uffix Series CMOS Gates 文件：150.29 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
B?뭆uffix Series CMOS Gates 文件：150.29 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
Dual 4-Input NAND Gates 文件：105.07 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
Dual 4-Input NAND Gates 文件：127.72 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
B?뭆uffix Series CMOS Gates 文件：150.29 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
B?뭆uffix Series CMOS Gates 文件：150.29 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
1-pole/2-pole 16A polarized power relays Variety of contact arrangements FEATURES 1. Variety of contact arrangements Wide lineup of 1 Form C, 1 Form A, 1 Form B, 2 Form C, 2 Form A, 2 Form B, 1 Form A 1 Form B. 2. Latching operation Latching via a polarized magnetic circuit structure allows remote operation and lower energy consumption 3. Compact with high c | Panasonic 松下 | | ||
Nylon Cable Tie Variations 文件：147.06 Kbytes Page：1 Pages | HeycoHeyco. 海科 | | ||
BRITISH FUSED CORD SET 250cm LONG BS 1363 TO IEC 60320 C13, 13A FUSE 文件：52.5 Kbytes Page：1 Pages | POWERDYNAMICS PowerDynamics, Inc | | ||
Nylon Cable Tie Variations 文件：147.06 Kbytes Page：1 Pages | HeycoHeyco. 海科 | | ||
6.0 TO 14.0 GHz COUGARPAK AMPLIFIER 文件：148.97 Kbytes Page：2 Pages | TELEDYNE 华特力科 | |
| 替换型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
CMOS NAND GATES | TI 德州仪器 | TI | | |
CMOS NAND Gates | Intersil | Intersil | | |
Dual 4-Input NOR(NAND) Gate | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | NSC | | |
Dual 4-Input NOR(NAND) Gate | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | NSC | | |
The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages | TI 德州仪器 | TI | | |
CMOS NAND GATES | TI 德州仪器 | TI | | |
NAND GATES | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | | |
NAND GATES | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | | |
Dual 4-input NAND Gate | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | | |
Dual 4-input NAND gate | Philips 飞利浦 | Philips | | |
Dual 4-input NAND gate | Philips 飞利浦 | Philips | | |
COMPLEMENTARY METAL OXIDE SILICON | NTE | NTE | | |
INPUT NAND GATE | RANDER & E International, Inc. | RANDE | | |
C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC | TOSHIBA 东芝 | TOSHIBA | |
MC14012B产品属性
- 类型
描述
- 型号
MC14012B
- 制造商
ONSEMI
- 制造商全称
ON Semiconductor
- 功能描述
B−Suffix Series CMOS Gates
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
SOP14 |
2669 |
只做原装,提供一站式配单服务,代工代料。BOM配单 |
|||
ON/安森美 |
24+ |
NA/ |
4000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ON |
2016+ |
SOP-14 |
3900 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ON/安森美 |
24+ |
SOIC-14 |
30000 |
原装正品公司现货,假一赔十! |
|||
ON/安森美 |
1948+ |
SOP-14 |
6852 |
只做原装正品现货!或订货假一赔十! |
|||
MOTOROLA/摩托罗拉 |
2023+ |
DIP |
6893 |
十五年行业诚信经营,专注全新正品 |
|||
ON |
25+23+ |
SOIC-14 |
18054 |
绝对原装正品全新进口深圳现货 |
|||
ON/安森美 |
25+ |
DIP14 |
65248 |
百分百原装现货 实单必成 |
|||
ON |
22+ |
SOP-14 |
3000 |
原装正品,支持实单 |
|||
ON/安森美 |
21+ |
SOIC-14 |
8080 |
只做原装,质量保证 |
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MC14012B规格书下载地址
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