MC14012B价格
参考价格：￥4.7672
型号：MC14012BCP 品牌：ON 备注：这里有MC14012B多少钱，2026年最近7天走势，今日出价，今日竞价，MC14012B批发/采购报价，MC14012B行情走势销售排行榜，MC14012B报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MC14012B | B-Suffix Series CMOS Gates The B Series logic gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 Vdc to 18 Vdc • All | ONSEMI 安森美半导体 |   | |
MC14012B | B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered | MOTOROLA 摩托罗拉 | | |
MC14012B | 双路 4 输入 NAND 门极 此类双路 4 输入 NAND 门极是在单片结构中使用 P 和 N 沟道增强模式器件构建的（互补 MOS）。其主要用途是需要低功耗和/或高抗扰度的场合。 • Supply Voltage Range = 3.0 Vdc to 18 Vdc\n• All Outputs Buffered\n• Capable of Driving Two Low-power TTL Loads or One Low-power Schottky TTL Load Over the Rated Temperature Range.\n• Double Diode Protection on All Inputs\n• Pin-for-Pin Replacements for Corresponding CD4000 Series B Suffix Devices\; | ONSEMI 安森美半导体 | | |
MC14012B | Dual 4-Input NAND Gates 文件：105.07 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | |
MC14012B | B?뭆uffix Series CMOS Gates 文件：150.29 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | |
B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered | MOTOROLA 摩托罗拉 | | ||
B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered | MOTOROLA 摩托罗拉 | | ||
B-Suffix Series CMOS Gates The B Series logic gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 Vdc to 18 Vdc • All | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates The B Series logic gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 Vdc to 18 Vdc • All | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered | MOTOROLA 摩托罗拉 | | ||
B-Suffix Series CMOS Gates The B Series logic gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 Vdc to 18 Vdc • All | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates The B Series logic gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 Vdc to 18 Vdc • All | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates The B Series logic gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 Vdc to 18 Vdc • All | ONSEMI 安森美半导体 | | ||
B?뭆uffix Series CMOS Gates 文件：150.29 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
Dual 4-Input NAND Gates 文件：127.72 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Dual 4-Input NAND Gates 文件：105.07 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
B?뭆uffix Series CMOS Gates 文件：150.29 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
B?뭆uffix Series CMOS Gates 文件：150.29 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：14-DIP（0.300"，7.62mm） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC GATE NAND 2CH 4-INP 14DIP 集成电路（IC） 门和反相器 | ONSEMI 安森美半导体 | | ||
Dual 4-Input NAND Gates 文件：127.72 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：14-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC GATE NAND 2CH 4-INP 14SOIC 集成电路（IC） 门和反相器 | ONSEMI 安森美半导体 | | ||
B?뭆uffix Series CMOS Gates 文件：150.29 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
B?뭆uffix Series CMOS Gates 文件：150.29 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
Dual 4-Input NAND Gates 文件：105.07 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
Dual 4-Input NAND Gates 文件：127.72 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
B?뭆uffix Series CMOS Gates 文件：150.29 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
B?뭆uffix Series CMOS Gates 文件：150.29 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
Dual 4-Input NAND Gates 文件：127.72 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Dual 4-Input NAND Gates 文件：105.07 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
B?뭆uffix Series CMOS Gates 文件：150.29 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
B?뭆uffix Series CMOS Gates 文件：150.29 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | |
| 替换型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CMOS NAND GATES | TI 德州仪器 | TI | | |
CMOS NAND Gates | INTERSIL | INTERSIL | | |
Dual 4-Input NOR(NAND) Gate | NSC 国半 | NSC | | |
Dual 4-Input NOR(NAND) Gate | NSC 国半 | NSC | | |
The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages | TI 德州仪器 | TI | | |
CMOS NAND GATES | TI 德州仪器 | TI | | |
NAND GATES | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | | |
NAND GATES | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | | |
Dual 4-input NAND Gate | HITACHIHitachi Semiconductor 日立日立公司 | HITACHI | | |
Dual 4-input NAND gate | PHILIPS 飞利浦 | PHILIPS | | |
Dual 4-input NAND gate | PHILIPS 飞利浦 | PHILIPS | | |
COMPLEMENTARY METAL OXIDE SILICON | NTE | NTE | | |
INPUT NAND GATE | RANDE | RANDE | | |
C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC | TOSHIBA 东芝 | TOSHIBA | |
MC14012B产品属性
- 类型
描述
- Pb-free：
Pb
- AEC Qualified：
A
- Halide free：
H
- PPAP Capablee：
P
- Status：
Active
- Type：
NAND
- Channels：
2
- VCC Min (V)：
3
- VCC Max (V)：
18
- tpd Max (ns)：
130
- IO Max (mA)：
null
- Package Type：
SOIC-14
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
25+ |
DIP |
12360 |
ON/安森美原装特价MC14012BCP即刻询购立享优惠#长期有货 |
|||
MOTOROLA/摩托罗拉 |
2450+ |
CDIP14 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
MOT |
24+ |
SOP14 |
4652 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
M |
QQ咨询 |
DIP |
77 |
全新原装 研究所指定供货商 |
|||
MOT |
26+ |
SOP8 |
890000 |
一级总代理商原厂原装大批量现货
一站式服务 |
|||
MOTOROLA |
22+ |
DIP14 |
3000 |
原装正品,支持实单 |
|||
ONSEMI/安森美 |
2025+ |
DIP14 |
675 |
原装进口价格优 请找坤融电子! |
|||
MOT |
25+ |
CDIP |
30000 |
代理全新原装现货,价格优势 |
|||
MOTOROLA/摩托罗拉 |
22+ |
DIP |
12245 |
现货,原厂原装假一罚十! |
|||
MC14012B |
25+ |
75 |
75 |
MC14012B规格书下载地址
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