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MC14晶体管资料
MC140别名：MC140三极管、MC140晶体管、MC140晶体三极管
MC140生产厂家：PIH
MC140制作材料：Si-NPN
MC140性质：低频或音频放大 （LF）_TR
MC140封装形式：直插封装
MC140极限工作电压：80V
MC140最大电流允许值：1A
MC140最大工作频率：<1MHZ或未知
MC140引脚数：3
MC140最大耗散功率：3.5W
MC140放大倍数：
MC140图片代号：B-21
MC140vtest：80
MC140htest：999900
- MC140atest：1
MC140wtest：3.5
MC140代换 MC140用什么型号代替：BD519,BD527,3DG16D,
MC14价格
参考价格：￥0.5882
型号：MC14001BDG 品牌：ONSemi 备注：这里有MC14多少钱，2025年最近7天走势，今日出价，今日竞价，MC14批发/采购报价，MC14行情走势销售排行榜，MC14报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Dual 3-Input NOR Gate Plus Inverter Dual 3-Input NOR Gate Plus Inverter The MC14000UB dual 3–input NOR gate plus inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immun | Motorola 摩托罗拉 |   | ||
Dual 3-Input NOR Gate Plus Inverter Dual 3-Input NOR Gate Plus Inverter The MC14000UB dual 3–input NOR gate plus inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immun | Motorola 摩托罗拉 | | ||
Dual 3-Input NOR Gate Plus Inverter Dual 3-Input NOR Gate Plus Inverter The MC14000UB dual 3–input NOR gate plus inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immun | Motorola 摩托罗拉 | | ||
Dual 3-Input NOR Gate Plus Inverter Dual 3-Input NOR Gate Plus Inverter The MC14000UB dual 3–input NOR gate plus inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immun | Motorola 摩托罗拉 | | ||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered | Motorola 摩托罗拉 | | ||
B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered | Motorola 摩托罗拉 | | ||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered | Motorola 摩托罗拉 | | ||
B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered | Motorola 摩托罗拉 | | ||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered | Motorola 摩托罗拉 | | ||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V | ONSEMI 安森美半导体 | | ||
UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions. | ONSEMI 安森美半导体 | | ||
UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions. | ONSEMI 安森美半导体 | | ||
UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions. | ONSEMI 安森美半导体 | | ||
UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions. | ONSEMI 安森美半导体 | | ||
UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions. | ONSEMI 安森美半导体 | | ||
UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions. | ONSEMI 安森美半导体 | | ||
UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions. | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered | Motorola 摩托罗拉 | | ||
B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered | Motorola 摩托罗拉 | | ||
B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered | Motorola 摩托罗拉 | | ||
B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered | Motorola 摩托罗拉 | | ||
8-function calculator unit co-operating with LED display [UNITRA CEMI] 8-function calculator unit co-operating with LED display | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
18-BIT STATIC SHIFT REGISTER The MC14006B shift register is comprised of four separate shift register sections sharing a common clock: two sections have four stages, and two sections have five stages with an output tap on both the fourth and fifth stages. This makes it possible to obtain a shift register of 4, 5, 8, 9, 10, 12 | Motorola 摩托罗拉 | | ||
Dual Complementary Pair Plus Inverter Dual Complementary Pair Plus Inverter The MC14007UB multipurpose device consists of three N−Channel and three P−Channel enhancement mode devices packaged to provide access to each device. These versatile parts are useful in inverter circuits, pulse−shapers, linear amplifiers, high input impedance | ONSEMI 安森美半导体 | | ||
8-function calculator unit co-operating with LED display [UNITRA CEMI] 8-function calculator unit co-operating with LED display | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Dual Complementary Pair Plus Inverter Dual Complementary Pair Plus Inverter The MC14007UB multipurpose device consists of three N−Channel and three P−Channel enhancement mode devices packaged to provide access to each device. These versatile parts are useful in inverter circuits, pulse−shapers, linear amplifiers, high input impedance | ONSEMI 安森美半导体 | | ||
Dual Complementary Pair Plus Inverter Dual Complementary Pair Plus Inverter The MC14007UB multipurpose device consists of three N−Channel and three P−Channel enhancement mode devices packaged to provide access to each device. These versatile parts are useful in inverter circuits, pulse−shapers, linear amplifiers, high input impedance | ONSEMI 安森美半导体 | | ||
Dual Complementary Pair Plus Inverter Dual Complementary Pair Plus Inverter The MC14007UB multipurpose device consists of three N−Channel and three P−Channel enhancement mode devices packaged to provide access to each device. These versatile parts are useful in inverter circuits, pulse−shapers, linear amplifiers, high input impedance | ONSEMI 安森美半导体 | | ||
Dual Complementary Pair Plus Inverter Dual Complementary Pair Plus Inverter The MC14007UB multipurpose device consists of three N−Channel and three P−Channel enhancement mode devices packaged to provide access to each device. These versatile parts are useful in inverter circuits, pulse−shapers, linear amplifiers, high input impedance | ONSEMI 安森美半导体 | | ||
Dual Complementary Pair Plus Inverter Dual Complementary Pair Plus Inverter The MC14007UB multipurpose device consists of three N−Channel and three P−Channel enhancement mode devices packaged to provide access to each device. These versatile parts are useful in inverter circuits, pulse−shapers, linear amplifiers, high input impedance | ONSEMI 安森美半导体 | | ||
Dual Complementary Pair Plus Inverter Dual Complementary Pair Plus Inverter The MC14007UB multipurpose device consists of three N−Channel and three P−Channel enhancement mode devices packaged to provide access to each device. These versatile parts are useful in inverter circuits, pulse−shapers, linear amplifiers, high input impedance | ONSEMI 安森美半导体 | | ||
Dual Complementary Pair Plus Inverter Dual Complementary Pair Plus Inverter The MC14007UB multipurpose device consists of three N−Channel and three P−Channel enhancement mode devices packaged to provide access to each device. These versatile parts are useful in inverter circuits, pulse−shapers, linear amplifiers, high input impedance | ONSEMI 安森美半导体 | | ||
4-Bit Full Adder The MC14008B 4–bit full adder is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. This device consists of four full adders with fast internal look–ahead carry output. It is useful in binary addition and other arithmetic applications. The fast | Motorola 摩托罗拉 | | ||
4-Bit Full Adder The MC14008B 4−bit full adder is constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. This device consists of four full adders with fast internal look−ahead carry output. It is useful in binary addition and other arithmetic applications. The fast | ONSEMI 安森美半导体 | | ||
4-Bit Full Adder The MC14008B 4−bit full adder is constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. This device consists of four full adders with fast internal look−ahead carry output. It is useful in binary addition and other arithmetic applications. The fast | ONSEMI 安森美半导体 | | ||
4-Bit Full Adder Features * Look—Ahead Carry Output * Diode Protection on All Inputs * All Outputs Buffered * Supply Voltage Range = 3.0 Vdc to 18 Vdc * Capable of Driving Two Low—Power TTL Loads or One Low—Power Schottky TTL Load Over the Rated Temperature Range * Pin—for—Pin Replacement for CD4008B * Pb—F | ONSEMI 安森美半导体 | | ||
4-Bit Full Adder Features * Look—Ahead Carry Output * Diode Protection on All Inputs * All Outputs Buffered * Supply Voltage Range = 3.0 Vdc to 18 Vdc * Capable of Driving Two Low—Power TTL Loads or One Low—Power Schottky TTL Load Over the Rated Temperature Range * Pin—for—Pin Replacement for CD4008B * Pb—F | ONSEMI 安森美半导体 | | ||
4-Bit Full Adder The MC14008B 4–bit full adder is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. This device consists of four full adders with fast internal look–ahead carry output. It is useful in binary addition and other arithmetic applications. The fast | Motorola 摩托罗拉 | | ||
4-Bit Full Adder The MC14008B 4–bit full adder is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. This device consists of four full adders with fast internal look–ahead carry output. It is useful in binary addition and other arithmetic applications. The fast | Motorola 摩托罗拉 | | ||
4-Bit Full Adder The MC14008B 4−bit full adder is constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. This device consists of four full adders with fast internal look−ahead carry output. It is useful in binary addition and other arithmetic applications. The fast | ONSEMI 安森美半导体 | | ||
4-Bit Full Adder Features * Look—Ahead Carry Output * Diode Protection on All Inputs * All Outputs Buffered * Supply Voltage Range = 3.0 Vdc to 18 Vdc * Capable of Driving Two Low—Power TTL Loads or One Low—Power Schottky TTL Load Over the Rated Temperature Range * Pin—for—Pin Replacement for CD4008B * Pb—F | ONSEMI 安森美半导体 | | ||
4-Bit Full Adder The MC14008B 4−bit full adder is constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. This device consists of four full adders with fast internal look−ahead carry output. It is useful in binary addition and other arithmetic applications. The fast | ONSEMI 安森美半导体 | | ||
4-Bit Full Adder Features * Look—Ahead Carry Output * Diode Protection on All Inputs * All Outputs Buffered * Supply Voltage Range = 3.0 Vdc to 18 Vdc * Capable of Driving Two Low—Power TTL Loads or One Low—Power Schottky TTL Load Over the Rated Temperature Range * Pin—for—Pin Replacement for CD4008B * Pb—F | ONSEMI 安森美半导体 | | ||
4-Bit Full Adder The MC14008B 4–bit full adder is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. This device consists of four full adders with fast internal look–ahead carry output. It is useful in binary addition and other arithmetic applications. The fast | Motorola 摩托罗拉 | | ||
4-Bit Full Adder The MC14008B 4−bit full adder is constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. This device consists of four full adders with fast internal look−ahead carry output. It is useful in binary addition and other arithmetic applications. The fast | ONSEMI 安森美半导体 | | ||
4-Bit Full Adder The MC14008B 4−bit full adder is constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. This device consists of four full adders with fast internal look−ahead carry output. It is useful in binary addition and other arithmetic applications. The fast | ONSEMI 安森美半导体 | | ||
4-Bit Full Adder The MC14008B 4−bit full adder is constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. This device consists of four full adders with fast internal look−ahead carry output. It is useful in binary addition and other arithmetic applications. The fast | ONSEMI 安森美半导体 | | ||
HEX BUFFERS HEX BUFFERS | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
HEX BUFFERS HEX BUFFERS | ETCList of Unclassifed Manufacturers 未分类制造商 | |
| 替换型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Toroidal Surface Mount Inductors | CANDD | CANDD | | |
10W - 33KV SINGLEOUTPUT DC / DC INDUSTRIAL | POWERBOX | POWERBOX | | |
NOR GATE | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | | |
Dual 3-input NOR gate and inverter | Philips 飞利浦 | Philips | | |
Dual 3-input NOR gate and inverter | Philips 飞利浦 | Philips | | |
Dual 3-input NOR gate and inverter | Philips 飞利浦 | Philips | | |
COMPLEMENTARY METAL OXIDE SILICON | NTE | NTE | | |
DUAL THREE INPUT NOR GATE PLUS INVERTER | RANDE | RANDE | |
MC14产品属性
- 类型
描述
- 型号
MC14
- 制造商
MOTOROLA
- 制造商全称
Motorola, Inc
- 功能描述
Dual 3-Input NOR Gate Plus Inverter
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOT |
05+ |
SOP14 |
2360 |
全新原装进口自己库存优势 |
|||
MOT |
25+ |
118 |
公司优势库存 热卖中! |
||||
MOT |
25+ |
SOP |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
MOTOROLA/摩托罗拉 |
2450+ |
CDIP14 |
6540 |
只做原装正品现货或订货!终端客户免费申请样品! |
|||
MOT |
81+ |
DIP/14 |
72 |
原装现货海量库存欢迎咨询 |
|||
MOT |
24+ |
DIP-14 |
21 |
||||
ON |
25+ |
SOP-14 |
6500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
MOTOROLA |
22+ |
DIP14 |
3000 |
原装正品,支持实单 |
|||
MOT |
22+ |
DIP-14P |
20000 |
公司只做原装 品质保障 |
|||
MOTOROLA/摩托罗拉 |
2447 |
CDIP14 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
MC14芯片相关品牌
MC14规格书下载地址
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- MC1364PQ
MC14数据表相关新闻
MC14013BDR2G双D触发器
MC14013BDR2G双D触发器
2023-9-1MC13892DJVL 原装现货 特价销售
只做原装正品，原包装标签 欢迎咨询！
2021-9-6MC13892DJVL 原装现货 特价销售
原包装 原标签 特价销售 假一罚十
2021-6-28MC14049BDR2G原装现货
MC14049BDR2G原装现货
2019-7-4MC1403BD-精密低电压基准
精密的带鈥揼美联社参考电压设计的关键仪器仪表和D / A转换器应用。本机的设计工作与D/ A转换器，精度高达12位，或作为功率参考电源应用。 输出电压：2.5伏25毫伏 输入电压范围：4.5 V至40 V 静态电流：1.2 mA典型 输出电流：10毫安 温度系数：10 ppm的/掳C典型 保证温度漂移规范 相当于AD580 标准8鈥扬在DIP和SOIC封装在8鈥扬 典型应用 参考电压为8至12位D/ A转换器
2013-3-17MC1378P-ACF-II评估板操作手册
MC1378是一款双极复合视频叠加编码器和微机同步。 MC1378包含完整的编码器功能的MC1377，即正交颜色的调制器，RGB矩阵，消隐电平钳位，再加上一个完整的补充同步器锁定一个基于微机的任何远程视频源的视频源。 MC1378可以被用来作为本地系统的时间和编码源，但它是最有价值的使用时，锁定到一个远程微机源起源于视频信号。 •包含所有需要的参考振荡器 •可以工作在PAL或NTSC模式，625或525线 •宽带，完全保真的色彩编码 •本地或远程操作模式 •最小
2013-1-16
DdatasheetPDF页码索引
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