MC14001价格

参考价格:¥0.5882

型号:MC14001BDG 品牌:ONSemi 备注:这里有MC14001多少钱,2025年最近7天走势,今日出价,今日竞价,MC14001批发/采购报价,MC14001行情走势销售排行榜,MC14001报价。
型号 功能描述 生产厂家&企业 LOGO 操作
MC14001

B-SuffixSeriesCMOSGates

B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MC14001

B-SuffixSeriesCMOSGates

TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. 1.SupplyVoltageRange=3.0Vdcto18Vdc 2.AllOutputsBuffered

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola
MC14001

SingleSupplyQuadComparators

文件:130.66 Kbytes Page:12 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. 1.SupplyVoltageRange=3.0Vdcto18Vdc 2.AllOutputsBuffered

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola

B-SuffixSeriesCMOSGates

TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. 1.SupplyVoltageRange=3.0Vdcto18Vdc 2.AllOutputsBuffered

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola

B-SuffixSeriesCMOSGates

B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. 1.SupplyVoltageRange=3.0Vdcto18Vdc 2.AllOutputsBuffered

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola

B-SuffixSeriesCMOSGates

B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. 1.SupplyVoltageRange=3.0Vdcto18Vdc 2.AllOutputsBuffered

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola

B-SuffixSeriesCMOSGates

B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

UB-SuffixSeriesCMOSGates

TheUBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired.TheUBsetofCMOSgatesareinvertingnon−bufferedfunctions.

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

UB-SuffixSeriesCMOSGates

TheUBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired.TheUBsetofCMOSgatesareinvertingnon−bufferedfunctions.

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

UB-SuffixSeriesCMOSGates

TheUBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired.TheUBsetofCMOSgatesareinvertingnon−bufferedfunctions.

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

UB-SuffixSeriesCMOSGates

TheUBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired.TheUBsetofCMOSgatesareinvertingnon−bufferedfunctions.

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

UB-SuffixSeriesCMOSGates

TheUBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired.TheUBsetofCMOSgatesareinvertingnon−bufferedfunctions.

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

UB-SuffixSeriesCMOSGates

TheUBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired.TheUBsetofCMOSgatesareinvertingnon−bufferedfunctions.

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

UB-SuffixSeriesCMOSGates

TheUBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired.TheUBsetofCMOSgatesareinvertingnon−bufferedfunctions.

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SUFFIXSERIESCMOSGATES

文件:134.49 Kbytes Page:12 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B?뭆uffixSeriesCMOSGates

文件:195.05 Kbytes Page:14 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

文件:135.47 Kbytes Page:11 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B?뭆uffixSeriesCMOSGates

文件:195.05 Kbytes Page:14 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

文件:135.47 Kbytes Page:11 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SUFFIXSERIESCMOSGATES

文件:134.49 Kbytes Page:12 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SUFFIXSERIESCMOSGATES

文件:134.49 Kbytes Page:12 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SUFFIXSERIESCMOSGATES

文件:134.49 Kbytes Page:12 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

文件:135.47 Kbytes Page:11 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

封装/外壳:14-SOIC(0.154",3.90mm 宽) 包装:管件 描述:IC GATE NOR 4CH 2-INP 14SOIC 集成电路(IC) 门和反相器

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

封装/外壳:14-SOIC(0.154",3.90mm 宽) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC GATE NOR 4CH 2-INP 14-SOIC 集成电路(IC) 门和反相器

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SUFFIXSERIESCMOSGATES

文件:134.49 Kbytes Page:12 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SUFFIXSERIESCMOSGATES

文件:134.49 Kbytes Page:12 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

文件:135.47 Kbytes Page:11 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SUFFIXSERIESCMOSGATES

文件:134.49 Kbytes Page:12 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

文件:135.47 Kbytes Page:11 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SUFFIXSERIESCMOSGATES

文件:134.49 Kbytes Page:12 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SUFFIXSERIESCMOSGATES

文件:134.49 Kbytes Page:12 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

文件:135.47 Kbytes Page:11 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

UB-SuffixSeriesCMOSGates

文件:144.39 Kbytes Page:6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

UB?뭆uffixSeriesCMOSGates

文件:147.04 Kbytes Page:7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

UB?뭆uffixSeriesCMOSGates

文件:147.04 Kbytes Page:7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

UB-SuffixSeriesCMOSGates

文件:194.06 Kbytes Page:7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

UB-SuffixSeriesCMOSGates

文件:144.39 Kbytes Page:6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

UB?뭆uffixSeriesCMOSGates

文件:147.04 Kbytes Page:7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

UB-SuffixSeriesCMOSGates

文件:194.06 Kbytes Page:7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

UB?뭆uffixSeriesCMOSGates

文件:147.04 Kbytes Page:7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

UB?뭆uffixSeriesCMOSGates

文件:147.04 Kbytes Page:7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

UB?뭆uffixSeriesCMOSGates

文件:147.04 Kbytes Page:7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

UB-SuffixSeriesCMOSGates

文件:194.06 Kbytes Page:7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

UB-SuffixSeriesCMOSGates

文件:144.39 Kbytes Page:6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

UB?뭆uffixSeriesCMOSGates

文件:147.04 Kbytes Page:7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

UB?뭆uffixSeriesCMOSGates

文件:147.04 Kbytes Page:7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

UB-SuffixSeriesCMOSGates

文件:194.06 Kbytes Page:7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

UB-SuffixSeriesCMOSGates

文件:144.39 Kbytes Page:6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
替换型号 功能描述 生产厂家&企业 LOGO 操作

Quad 2-Input NOR,NAND Buffered B Series Gate

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

NSC

CMOS NOR Gates

TITexas Instruments

德州仪器美国德州仪器公司

TI

Quad 2-Input NOR Buffered B Series Gate . Quad 2-Input NAND Buffered B Series Gate

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

CMOS NOR Gate

IntersilIntersil Corporation

Intersil

Quad 2-Input NOR(NAND) Buffered B Series Gate

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

NSC

Quad 2-Input NOR,NAND Buffered B Series Gate

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

NSC

Quad 2-Input NOR,NAND Buffered B Series Gate

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

NSC

Quad 2-Input NOR Buffered B Series Gate . Quad 2-Input NAND Buffered B Series Gate

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

CMOS NOR Gates

TITexas Instruments

德州仪器美国德州仪器公司

TI

CMOS NOR Gates

TITexas Instruments

德州仪器美国德州仪器公司

TI

Quad 2-Input NOR,NAND Buffered B Series Gate

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

NSC

NOR GATE

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

QUADRUPLE 2 INPUT NOR GATE

HitachiHitachi Semiconductor

日立日立公司

Hitachi

Quadruple 2-input NOR gate

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

Quadruple 2-input NOR gate

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

Quadruple 2-input NOR gate

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

Quadruple 2-input NOR gate

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

COMPLEMENTARY METAL OXIDE SILICON

NTENTE Electronics

NTE

INPUT NOR GATE

RANDER & E International, Inc.

RANDE

Quad 2 Input NOR Gate

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

QUAD 2 INPUT NOR GATE

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

MC14001产品属性

  • 类型

    描述

  • 型号

    MC14001

  • 制造商

    ONSEMI

  • 制造商全称

    ON Semiconductor

  • 功能描述

    Single Supply Quad Comparators

更新时间:2025-6-24 12:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON/安森美
22+
SMD
179620
原装正品现货,可开13点税
MOTOROLA/摩托罗拉
9804
SOP
1687
原装现货
ON
24+
SOP14
8500
只做原装正品假一赔十为客户做到零风险!!
ON
23+
SOP
12560
受权代理!全新原装现货特价热卖!
ON(安森美)
23+
SOIC-14_150mil
13928
公司只做原装正品,假一赔十
MOTOROLA
94+/95+/96+
DIP14
4
全新原装!优势库存热卖中!
ON/安森美
25+
原厂封装
10280
原厂授权一级代理,专注军工、汽车、医疗、工业、新能源、电力!
MOT
24+
SOP
2987
只售原装自家现货!诚信经营!欢迎来电!
ON/安森美
23+
SO3.9
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
ON/安森美
24+
SOP14
8950
BOM配单专家,发货快,价格低

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  • RHOMBUS-IND
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    精密的带鈥揼美联社参考电压设计的关键仪器仪表和D/A转换器应用。本机的设计工作与D/A转换器,精度高达12位,或作为功率参考电源应用。输出电压:2.5伏25毫伏输入电压范围:4.5V至40V静态电流:1.2mA典型输出电流:10毫安温度系数:10ppm的/掳C典型保证温度漂移规范相当于AD580标准8鈥扬在DIP和SOIC封装在8鈥扬典型应用参考电压为8至12位D/A转换器

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