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MC14001价格
参考价格:¥0.5882
型号:MC14001BDG 品牌:ONSemi 备注:这里有MC14001多少钱,2025年最近7天走势,今日出价,今日竞价,MC14001批发/采购报价,MC14001行情走势销售排行榜,MC14001报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
MC14001 | B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V | ONSEMI 安森美半导体 | ||
MC14001 | B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered | Motorola 摩托罗拉 | ||
MC14001 | Single Supply Quad Comparators 文件:130.66 Kbytes Page:12 Pages | ONSEMI 安森美半导体 | ||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V | ONSEMI 安森美半导体 | |||
B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered | Motorola 摩托罗拉 | |||
B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered | Motorola 摩托罗拉 | |||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V | ONSEMI 安森美半导体 | |||
B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered | Motorola 摩托罗拉 | |||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V | ONSEMI 安森美半导体 | |||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V | ONSEMI 安森美半导体 | |||
B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered | Motorola 摩托罗拉 | |||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V | ONSEMI 安森美半导体 | |||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V | ONSEMI 安森美半导体 | |||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V | ONSEMI 安森美半导体 | |||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V | ONSEMI 安森美半导体 | |||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V | ONSEMI 安森美半导体 | |||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V | ONSEMI 安森美半导体 | |||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V | ONSEMI 安森美半导体 | |||
UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions. | ONSEMI 安森美半导体 | |||
UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions. | ONSEMI 安森美半导体 | |||
UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions. | ONSEMI 安森美半导体 | |||
UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions. | ONSEMI 安森美半导体 | |||
UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions. | ONSEMI 安森美半导体 | |||
UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions. | ONSEMI 安森美半导体 | |||
UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions. | ONSEMI 安森美半导体 | |||
B-SUFFIX SERIES CMOS GATES 文件:134.49 Kbytes Page:12 Pages | ONSEMI 安森美半导体 | |||
B?뭆uffix Series CMOS Gates 文件:195.05 Kbytes Page:14 Pages | ONSEMI 安森美半导体 | |||
B-Suffix Series CMOS Gates 文件:135.47 Kbytes Page:11 Pages | ONSEMI 安森美半导体 | |||
B?뭆uffix Series CMOS Gates 文件:195.05 Kbytes Page:14 Pages | ONSEMI 安森美半导体 | |||
B-Suffix Series CMOS Gates 文件:135.47 Kbytes Page:11 Pages | ONSEMI 安森美半导体 | |||
B-SUFFIX SERIES CMOS GATES 文件:134.49 Kbytes Page:12 Pages | ONSEMI 安森美半导体 | |||
B-SUFFIX SERIES CMOS GATES 文件:134.49 Kbytes Page:12 Pages | ONSEMI 安森美半导体 | |||
B-SUFFIX SERIES CMOS GATES 文件:134.49 Kbytes Page:12 Pages | ONSEMI 安森美半导体 | |||
B-Suffix Series CMOS Gates 文件:135.47 Kbytes Page:11 Pages | ONSEMI 安森美半导体 | |||
封装/外壳:14-SOIC(0.154",3.90mm 宽) 包装:管件 描述:IC GATE NOR 4CH 2-INP 14SOIC 集成电路(IC) 门和反相器 | ONSEMI 安森美半导体 | |||
封装/外壳:14-SOIC(0.154",3.90mm 宽) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC GATE NOR 4CH 2-INP 14-SOIC 集成电路(IC) 门和反相器 | ONSEMI 安森美半导体 | |||
B-SUFFIX SERIES CMOS GATES 文件:134.49 Kbytes Page:12 Pages | ONSEMI 安森美半导体 | |||
B-SUFFIX SERIES CMOS GATES 文件:134.49 Kbytes Page:12 Pages | ONSEMI 安森美半导体 | |||
B-Suffix Series CMOS Gates 文件:135.47 Kbytes Page:11 Pages | ONSEMI 安森美半导体 | |||
B-SUFFIX SERIES CMOS GATES 文件:134.49 Kbytes Page:12 Pages | ONSEMI 安森美半导体 | |||
B-Suffix Series CMOS Gates 文件:135.47 Kbytes Page:11 Pages | ONSEMI 安森美半导体 | |||
B-SUFFIX SERIES CMOS GATES 文件:134.49 Kbytes Page:12 Pages | ONSEMI 安森美半导体 | |||
B-SUFFIX SERIES CMOS GATES 文件:134.49 Kbytes Page:12 Pages | ONSEMI 安森美半导体 | |||
B-Suffix Series CMOS Gates 文件:135.47 Kbytes Page:11 Pages | ONSEMI 安森美半导体 | |||
UB-Suffix Series CMOS Gates 文件:144.39 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | |||
UB?뭆uffix Series CMOS Gates 文件:147.04 Kbytes Page:7 Pages | ONSEMI 安森美半导体 | |||
UB?뭆uffix Series CMOS Gates 文件:147.04 Kbytes Page:7 Pages | ONSEMI 安森美半导体 | |||
UB-Suffix Series CMOS Gates 文件:194.06 Kbytes Page:7 Pages | ONSEMI 安森美半导体 | |||
UB-Suffix Series CMOS Gates 文件:144.39 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | |||
UB?뭆uffix Series CMOS Gates 文件:147.04 Kbytes Page:7 Pages | ONSEMI 安森美半导体 | |||
UB-Suffix Series CMOS Gates 文件:194.06 Kbytes Page:7 Pages | ONSEMI 安森美半导体 | |||
UB?뭆uffix Series CMOS Gates 文件:147.04 Kbytes Page:7 Pages | ONSEMI 安森美半导体 | |||
UB?뭆uffix Series CMOS Gates 文件:147.04 Kbytes Page:7 Pages | ONSEMI 安森美半导体 | |||
UB?뭆uffix Series CMOS Gates 文件:147.04 Kbytes Page:7 Pages | ONSEMI 安森美半导体 | |||
UB-Suffix Series CMOS Gates 文件:194.06 Kbytes Page:7 Pages | ONSEMI 安森美半导体 | |||
UB-Suffix Series CMOS Gates 文件:144.39 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | |||
UB?뭆uffix Series CMOS Gates 文件:147.04 Kbytes Page:7 Pages | ONSEMI 安森美半导体 | |||
UB?뭆uffix Series CMOS Gates 文件:147.04 Kbytes Page:7 Pages | ONSEMI 安森美半导体 | |||
UB-Suffix Series CMOS Gates 文件:194.06 Kbytes Page:7 Pages | ONSEMI 安森美半导体 | |||
UB-Suffix Series CMOS Gates 文件:144.39 Kbytes Page:6 Pages | ONSEMI 安森美半导体 |
替换型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
Quad 2-Input NOR,NAND Buffered B Series Gate | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | NSC | ||
CMOS NOR Gates | TI 德州仪器 | TI | ||
Quad 2-Input NOR Buffered B Series Gate . Quad 2-Input NAND Buffered B Series Gate | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
CMOS NOR Gate | Intersil | Intersil | ||
Quad 2-Input NOR(NAND) Buffered B Series Gate | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | NSC | ||
Quad 2-Input NOR,NAND Buffered B Series Gate | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | NSC | ||
Quad 2-Input NOR,NAND Buffered B Series Gate | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | NSC | ||
Quad 2-Input NOR Buffered B Series Gate . Quad 2-Input NAND Buffered B Series Gate | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
CMOS NOR Gates | TI 德州仪器 | TI | ||
CMOS NOR Gates | TI 德州仪器 | TI | ||
Quad 2-Input NOR,NAND Buffered B Series Gate | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | NSC | ||
NOR GATE | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
QUADRUPLE 2 INPUT NOR GATE | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
Quadruple 2-input NOR gate | Philips 飞利浦 | Philips | ||
Quadruple 2-input NOR gate | Philips 飞利浦 | Philips | ||
Quadruple 2-input NOR gate | Philips 飞利浦 | Philips | ||
Quadruple 2-input NOR gate | Philips 飞利浦 | Philips | ||
COMPLEMENTARY METAL OXIDE SILICON | NTE | NTE | ||
INPUT NOR GATE | RANDER & E International, Inc. | RANDE | ||
Quad 2 Input NOR Gate | TOSHIBA 东芝 | TOSHIBA | ||
QUAD 2 INPUT NOR GATE | TOSHIBA 东芝 | TOSHIBA |
MC14001产品属性
- 类型
描述
- 型号
MC14001
- 制造商
ONSEMI
- 制造商全称
ON Semiconductor
- 功能描述
Single Supply Quad Comparators
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON/安森美 |
25+ |
DIP |
12360 |
ON/安森美原装特价MC14001BCP即刻询购立享优惠#长期有货 |
|||
ON(安森美) |
24+ |
标准封装 |
12048 |
全新原装正品/价格优惠/质量保障 |
|||
MOT |
23+ |
SOP14 |
20000 |
全新原装假一赔十 |
|||
ON/安森美 |
25+ |
原厂封装 |
10280 |
原厂授权一级代理,专注军工、汽车、医疗、工业、新能源、电力! |
|||
ON |
24+ |
SOP14 |
8500 |
只做原装正品假一赔十为客户做到零风险!! |
|||
ON(安森美) |
2511 |
TSSOP-14 |
9850 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
ON/安森美 |
21+ |
NA |
3855 |
只做原装,假一罚十 |
|||
MOTOROLA/摩托罗拉 |
25+ |
CDIP14 |
13800 |
原装,请咨询 |
|||
MOTOROLA/摩托罗拉 |
19+ |
MODULE |
1290 |
主打模块,大量现货供应商QQ2355605126 |
|||
ON Semiconductor Corporation |
25+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
MC14001规格书下载地址
MC14001参数引脚图相关
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2013-1-16
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