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MC14001价格

参考价格：￥0.5882

型号：MC14001BDG 品牌：ONSemi 备注：这里有MC14001多少钱，2026年最近7天走势，今日出价，今日竞价，MC14001批发/采购报价，MC14001行情走势销售排行榜，MC14001报价。

型号	功能描述	生产厂家企业	LOGO
MC14001	B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V	ONSEMI 安森美半导体	ONSEMI
MC14001	B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered	MOTOROLA 摩托罗拉	MOTOROLA
MC14001	Single Supply Quad Comparators 文件：130.66 Kbytes Page：12 Pages	ONSEMI 安森美半导体	ONSEMI
MC14001	B-Suffix Series CMOS Gates	ETC 知名厂家	ETC
MC14001B	B-Suffix Series COMS Gates	ETC 知名厂家	ETC
MC14001B	B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V	ONSEMI 安森美半导体	ONSEMI
MC14001B	B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered	MOTOROLA 摩托罗拉	MOTOROLA
MC14001BCL	B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered	MOTOROLA 摩托罗拉	MOTOROLA
MC14001BCP	B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V	ONSEMI 安森美半导体	ONSEMI
MC14001BCP	B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered	MOTOROLA 摩托罗拉	MOTOROLA
MC14001BCPG	B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V	ONSEMI 安森美半导体	ONSEMI
MC14001BD	B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V	ONSEMI 安森美半导体	ONSEMI
MC14001BD	B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered	MOTOROLA 摩托罗拉	MOTOROLA
MC14001BDG	B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V	ONSEMI 安森美半导体	ONSEMI
MC14001BDR2	B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V	ONSEMI 安森美半导体	ONSEMI
MC14001BDR2G	B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V	ONSEMI 安森美半导体	ONSEMI
MC14001BDTR2	B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V	ONSEMI 安森美半导体	ONSEMI
MC14001BDTR2G	B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V	ONSEMI 安森美半导体	ONSEMI
MC14001BFEL	B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V	ONSEMI 安森美半导体	ONSEMI
MC14001BFELG	B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V	ONSEMI 安森美半导体	ONSEMI
MC14001UB	四路 2 输入 NOR 门极 The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non-buffered functions. • Supply Voltage Range = 3.0 Vdc to 18 Vdc\n• Linear and Oscillator Applications\n• Capable of Driving Two Low-power TTL Loads or One Low-power Schottky TTL Load Over the Rated Temperature Range\n• Double Diode Protection on All Inputs\n• Pin-for-Pin Replacements for Corresponding CD4000 Series UB S;	ONSEMI 安森美半导体	ONSEMI
MC14001UB	UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions.	ONSEMI 安森美半导体	ONSEMI
MC14001UBCP	UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions.	ONSEMI 安森美半导体	ONSEMI
MC14001UBCPG	UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions.	ONSEMI 安森美半导体	ONSEMI
MC14001UBD	UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions.	ONSEMI 安森美半导体	ONSEMI
MC14001UBDG	UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions.	ONSEMI 安森美半导体	ONSEMI
MC14001UBDR2	UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions.	ONSEMI 安森美半导体	ONSEMI
MC14001UBDR2G	UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions.	ONSEMI 安森美半导体	ONSEMI
MC14001B	B-SUFFIX SERIES CMOS GATES 文件：134.49 Kbytes Page：12 Pages	ONSEMI 安森美半导体	ONSEMI
MC14001B	B?뭆uffix Series CMOS Gates 文件：195.05 Kbytes Page：14 Pages	ONSEMI 安森美半导体	ONSEMI
MC14001B	B-Suffix Series CMOS Gates 文件：135.47 Kbytes Page：11 Pages	ONSEMI 安森美半导体	ONSEMI
MC14001B_06	B?뭆uffix Series CMOS Gates 文件：195.05 Kbytes Page：14 Pages	ONSEMI 安森美半导体	ONSEMI
MC14001B_14	B-Suffix Series CMOS Gates 文件：135.47 Kbytes Page：11 Pages	ONSEMI 安森美半导体	ONSEMI
MC14001BCP	B-SUFFIX SERIES CMOS GATES 文件：134.49 Kbytes Page：12 Pages	ONSEMI 安森美半导体	ONSEMI
MC14001BCPG	B-SUFFIX SERIES CMOS GATES 文件：134.49 Kbytes Page：12 Pages	ONSEMI 安森美半导体	ONSEMI
MC14001BD	B-SUFFIX SERIES CMOS GATES 文件：134.49 Kbytes Page：12 Pages	ONSEMI 安森美半导体	ONSEMI
MC14001BDG	B-Suffix Series CMOS Gates 文件：135.47 Kbytes Page：11 Pages	ONSEMI 安森美半导体	ONSEMI
MC14001BDG	封装/外壳：14-SOIC（0.154"，3.90mm 宽）包装：管件描述：IC GATE NOR 4CH 2-INP 14SOIC 集成电路（IC）门和反相器	ONSEMI 安森美半导体	ONSEMI
MC14001BDR2	封装/外壳：14-SOIC（0.154"，3.90mm 宽）包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：IC GATE NOR 4CH 2-INP 14-SOIC 集成电路（IC）门和反相器	ONSEMI 安森美半导体	ONSEMI
MC14001BDR2	B-SUFFIX SERIES CMOS GATES 文件：134.49 Kbytes Page：12 Pages	ONSEMI 安森美半导体	ONSEMI
MC14001BDR2G	B-SUFFIX SERIES CMOS GATES 文件：134.49 Kbytes Page：12 Pages	ONSEMI 安森美半导体	ONSEMI
MC14001BDR2G	B-Suffix Series CMOS Gates 文件：135.47 Kbytes Page：11 Pages	ONSEMI 安森美半导体	ONSEMI
MC14001BDTR2	B-SUFFIX SERIES CMOS GATES 文件：134.49 Kbytes Page：12 Pages	ONSEMI 安森美半导体	ONSEMI
MC14001BDTR2G	B-Suffix Series CMOS Gates 文件：135.47 Kbytes Page：11 Pages	ONSEMI 安森美半导体	ONSEMI
MC14001BFEL	B-SUFFIX SERIES CMOS GATES 文件：134.49 Kbytes Page：12 Pages	ONSEMI 安森美半导体	ONSEMI
MC14001BFELG	B-SUFFIX SERIES CMOS GATES 文件：134.49 Kbytes Page：12 Pages	ONSEMI 安森美半导体	ONSEMI
MC14001BFELG	B-Suffix Series CMOS Gates 文件：135.47 Kbytes Page：11 Pages	ONSEMI 安森美半导体	ONSEMI
MC14001UB	UB-Suffix Series CMOS Gates 文件：144.39 Kbytes Page：6 Pages	ONSEMI 安森美半导体	ONSEMI
MC14001UB	UB?뭆uffix Series CMOS Gates 文件：147.04 Kbytes Page：7 Pages	ONSEMI 安森美半导体	ONSEMI
MC14001UB_06	UB?뭆uffix Series CMOS Gates 文件：147.04 Kbytes Page：7 Pages	ONSEMI 安森美半导体	ONSEMI
MC14001UB_09	UB-Suffix Series CMOS Gates 文件：194.06 Kbytes Page：7 Pages	ONSEMI 安森美半导体	ONSEMI
MC14001UB_14	UB-Suffix Series CMOS Gates 文件：144.39 Kbytes Page：6 Pages	ONSEMI 安森美半导体	ONSEMI
MC14001UBCP	UB?뭆uffix Series CMOS Gates 文件：147.04 Kbytes Page：7 Pages	ONSEMI 安森美半导体	ONSEMI
MC14001UBCPG	UB-Suffix Series CMOS Gates 文件：194.06 Kbytes Page：7 Pages	ONSEMI 安森美半导体	ONSEMI
MC14001UBCPG	UB?뭆uffix Series CMOS Gates 文件：147.04 Kbytes Page：7 Pages	ONSEMI 安森美半导体	ONSEMI
MC14001UBD	UB?뭆uffix Series CMOS Gates 文件：147.04 Kbytes Page：7 Pages	ONSEMI 安森美半导体	ONSEMI
MC14001UBDG	UB-Suffix Series CMOS Gates 文件：194.06 Kbytes Page：7 Pages	ONSEMI 安森美半导体	ONSEMI
MC14001UBDG	UB?뭆uffix Series CMOS Gates 文件：147.04 Kbytes Page：7 Pages	ONSEMI 安森美半导体	ONSEMI
MC14001UBDG	UB-Suffix Series CMOS Gates 文件：144.39 Kbytes Page：6 Pages	ONSEMI 安森美半导体	ONSEMI
MC14001UBDR2	UB?뭆uffix Series CMOS Gates 文件：147.04 Kbytes Page：7 Pages	ONSEMI 安森美半导体	ONSEMI

替换型号	功能描述	生产厂家企业	LOGO
CD4001	Quad 2-Input NOR,NAND Buffered B Series Gate	NSC 国半	NSC
CD4001	CMOS NOR Gates	TI 德州仪器	TI
CD4001	Quad 2-Input NOR Buffered B Series Gate . Quad 2-Input NAND Buffered B Series Gate	FAIRCHILD 仙童半导体	FAIRCHILD
CD4001	CMOS NOR Gate	INTERSIL	INTERSIL
CD4001	Quad 2-Input NOR(NAND) Buffered B Series Gate	NSC 国半	NSC
CD4001BCJ	Quad 2-Input NOR,NAND Buffered B Series Gate	NSC 国半	NSC
CD4001BCN	Quad 2-Input NOR,NAND Buffered B Series Gate	NSC 国半	NSC
CD4001BCN	Quad 2-Input NOR Buffered B Series Gate . Quad 2-Input NAND Buffered B Series Gate	FAIRCHILD 仙童半导体	FAIRCHILD
CD4001BE	CMOS NOR Gates	TI 德州仪器	TI
CD4001BF	CMOS NOR Gates	TI 德州仪器	TI
CD4001BMJ	Quad 2-Input NOR,NAND Buffered B Series Gate	NSC 国半	NSC
HCC4001BF	NOR GATE	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
HD14001B	QUADRUPLE 2 INPUT NOR GATE	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
HEF4001BD	Quadruple 2-input NOR gate	PHILIPS 飞利浦	PHILIPS
HEF4001BD	Quadruple 2-input NOR gate	PHILIPS 飞利浦	PHILIPS
HEF4001BP	Quadruple 2-input NOR gate	PHILIPS 飞利浦	PHILIPS
HEF4001BP	Quadruple 2-input NOR gate	PHILIPS 飞利浦	PHILIPS
NTE4001B	COMPLEMENTARY METAL OXIDE SILICON	NTE	NTE
SCL4001B	INPUT NOR GATE	RANDE	RANDE
TC4001BP	Quad 2 Input NOR Gate	TOSHIBA 东芝	TOSHIBA
TC4001BP	QUAD 2 INPUT NOR GATE	TOSHIBA 东芝	TOSHIBA

MC14001产品属性

类型
描述
Pb-free：
Pb
AEC Qualified：
A
Halide free：
H
PPAP Capablee：
P
Status：
Active
Type：
NOR
Channels：
4
VCC Min (V)：
3
VCC Max (V)：
18
tpd Max (ns)：
100
IO Max (mA)：
null
Package Type：
SOIC-14

MC14001供应商更多...

更新时间：2026-5-14 18:01:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市科恒伟业电子有限公司	MC14001BDR2G	ON	24+	SOP14	8500	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市芯球通科技有限公司	MC14001BDG	ON(安森美)	23+	SOIC-14_150mil	13928	公司只做原装正品,假一赔十	询价
深圳市毅创弘电子科技有限公司	MC14001CL	M	24+	DIP	1500	AI芯片,车规MCU原装现货/为新能源汽车电子行业采购保驾护航	询价
深圳市明嘉莱科技有限公司	MC14001UBDR2G	ON Semiconductor Corporation	25+	SMD	918000	明嘉莱只做原装正品现货	询价
深圳市得捷芯城科技有限公司	MC14001BDR2G	ON(安森美)	25+	SOIC-14_150mil	21000	原装正品现货,原厂订货,可支持含税原型号开票。	询价
深圳诚思涵科技有限公司	MC14001BCL	MOTOROLA/摩托罗拉	26+	CDIP14	9880	只做原装,欢迎来电资询	询价
标准国际(香港)有限公司	MC14001BCP	MOTOROLA	25+	DIP14	4	全新原装!优势库存热卖中!	询价
深圳市盈慧通电子有限公司	MC14001BDTR2G	ON(安森美)	2511	TSSOP-14	9850	电子元器件采购降本 30%!公司原厂直采,砍掉中间差价	询价
深圳市坤融电子科技有限公司	MC14001BCPG	ON/安森美	2025+	DIP14	5000	原装进口价格优请找坤融电子!	询价
深圳市清腾科技有限公司	MC14001BCL	MOTOROLA/摩托罗拉	25+	CDIP14	20000	原装	询价

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MC1378P-ACF-II评估板操作手册
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MC14001价格

MC14001产品属性

MC14001供应商更多...

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MC14001规格书下载地址

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DdatasheetPDF页码索引

MC13892DJVL 原装现货特价销售

MC13892DJVL 原装现货特价销售