MC14001价格

参考价格:¥0.5882

型号:MC14001BDG 品牌:ONSemi 备注:这里有MC14001多少钱,2025年最近7天走势,今日出价,今日竞价,MC14001批发/采购报价,MC14001行情走势销售排行榜,MC14001报价。
型号 功能描述 生产厂家&企业 LOGO 操作
MC14001

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

ONSEMI

安森美半导体

MC14001

B-Suffix Series CMOS Gates

TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered

Motorola

摩托罗拉

MC14001

Single Supply Quad Comparators

文件:130.66 Kbytes Page:12 Pages

ONSEMI

安森美半导体

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

ONSEMI

安森美半导体

B-Suffix Series CMOS Gates

TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered

Motorola

摩托罗拉

B-Suffix Series CMOS Gates

TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered

Motorola

摩托罗拉

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

ONSEMI

安森美半导体

B-Suffix Series CMOS Gates

TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered

Motorola

摩托罗拉

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

ONSEMI

安森美半导体

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

ONSEMI

安森美半导体

B-Suffix Series CMOS Gates

TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered

Motorola

摩托罗拉

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

ONSEMI

安森美半导体

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

ONSEMI

安森美半导体

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

ONSEMI

安森美半导体

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

ONSEMI

安森美半导体

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

ONSEMI

安森美半导体

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

ONSEMI

安森美半导体

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

ONSEMI

安森美半导体

UB-Suffix Series CMOS Gates

The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions.

ONSEMI

安森美半导体

UB-Suffix Series CMOS Gates

The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions.

ONSEMI

安森美半导体

UB-Suffix Series CMOS Gates

The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions.

ONSEMI

安森美半导体

UB-Suffix Series CMOS Gates

The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions.

ONSEMI

安森美半导体

UB-Suffix Series CMOS Gates

The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions.

ONSEMI

安森美半导体

UB-Suffix Series CMOS Gates

The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions.

ONSEMI

安森美半导体

UB-Suffix Series CMOS Gates

The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions.

ONSEMI

安森美半导体

B-SUFFIX SERIES CMOS GATES

文件:134.49 Kbytes Page:12 Pages

ONSEMI

安森美半导体

B?뭆uffix Series CMOS Gates

文件:195.05 Kbytes Page:14 Pages

ONSEMI

安森美半导体

B-Suffix Series CMOS Gates

文件:135.47 Kbytes Page:11 Pages

ONSEMI

安森美半导体

B?뭆uffix Series CMOS Gates

文件:195.05 Kbytes Page:14 Pages

ONSEMI

安森美半导体

B-Suffix Series CMOS Gates

文件:135.47 Kbytes Page:11 Pages

ONSEMI

安森美半导体

B-SUFFIX SERIES CMOS GATES

文件:134.49 Kbytes Page:12 Pages

ONSEMI

安森美半导体

B-SUFFIX SERIES CMOS GATES

文件:134.49 Kbytes Page:12 Pages

ONSEMI

安森美半导体

B-SUFFIX SERIES CMOS GATES

文件:134.49 Kbytes Page:12 Pages

ONSEMI

安森美半导体

B-Suffix Series CMOS Gates

文件:135.47 Kbytes Page:11 Pages

ONSEMI

安森美半导体

封装/外壳:14-SOIC(0.154",3.90mm 宽) 包装:管件 描述:IC GATE NOR 4CH 2-INP 14SOIC 集成电路(IC) 门和反相器

ONSEMI

安森美半导体

封装/外壳:14-SOIC(0.154",3.90mm 宽) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC GATE NOR 4CH 2-INP 14-SOIC 集成电路(IC) 门和反相器

ONSEMI

安森美半导体

B-SUFFIX SERIES CMOS GATES

文件:134.49 Kbytes Page:12 Pages

ONSEMI

安森美半导体

B-SUFFIX SERIES CMOS GATES

文件:134.49 Kbytes Page:12 Pages

ONSEMI

安森美半导体

B-Suffix Series CMOS Gates

文件:135.47 Kbytes Page:11 Pages

ONSEMI

安森美半导体

B-SUFFIX SERIES CMOS GATES

文件:134.49 Kbytes Page:12 Pages

ONSEMI

安森美半导体

B-Suffix Series CMOS Gates

文件:135.47 Kbytes Page:11 Pages

ONSEMI

安森美半导体

B-SUFFIX SERIES CMOS GATES

文件:134.49 Kbytes Page:12 Pages

ONSEMI

安森美半导体

B-SUFFIX SERIES CMOS GATES

文件:134.49 Kbytes Page:12 Pages

ONSEMI

安森美半导体

B-Suffix Series CMOS Gates

文件:135.47 Kbytes Page:11 Pages

ONSEMI

安森美半导体

UB-Suffix Series CMOS Gates

文件:144.39 Kbytes Page:6 Pages

ONSEMI

安森美半导体

UB?뭆uffix Series CMOS Gates

文件:147.04 Kbytes Page:7 Pages

ONSEMI

安森美半导体

UB?뭆uffix Series CMOS Gates

文件:147.04 Kbytes Page:7 Pages

ONSEMI

安森美半导体

UB-Suffix Series CMOS Gates

文件:194.06 Kbytes Page:7 Pages

ONSEMI

安森美半导体

UB-Suffix Series CMOS Gates

文件:144.39 Kbytes Page:6 Pages

ONSEMI

安森美半导体

UB?뭆uffix Series CMOS Gates

文件:147.04 Kbytes Page:7 Pages

ONSEMI

安森美半导体

UB-Suffix Series CMOS Gates

文件:194.06 Kbytes Page:7 Pages

ONSEMI

安森美半导体

UB?뭆uffix Series CMOS Gates

文件:147.04 Kbytes Page:7 Pages

ONSEMI

安森美半导体

UB?뭆uffix Series CMOS Gates

文件:147.04 Kbytes Page:7 Pages

ONSEMI

安森美半导体

UB?뭆uffix Series CMOS Gates

文件:147.04 Kbytes Page:7 Pages

ONSEMI

安森美半导体

UB-Suffix Series CMOS Gates

文件:194.06 Kbytes Page:7 Pages

ONSEMI

安森美半导体

UB-Suffix Series CMOS Gates

文件:144.39 Kbytes Page:6 Pages

ONSEMI

安森美半导体

UB?뭆uffix Series CMOS Gates

文件:147.04 Kbytes Page:7 Pages

ONSEMI

安森美半导体

UB?뭆uffix Series CMOS Gates

文件:147.04 Kbytes Page:7 Pages

ONSEMI

安森美半导体

UB-Suffix Series CMOS Gates

文件:194.06 Kbytes Page:7 Pages

ONSEMI

安森美半导体

UB-Suffix Series CMOS Gates

文件:144.39 Kbytes Page:6 Pages

ONSEMI

安森美半导体

替换型号 功能描述 生产厂家&企业 LOGO 操作

Quad 2-Input NOR,NAND Buffered B Series Gate

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

CMOS NOR Gates

TI

德州仪器

Quad 2-Input NOR Buffered B Series Gate . Quad 2-Input NAND Buffered B Series Gate

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

CMOS NOR Gate

Intersil

Quad 2-Input NOR(NAND) Buffered B Series Gate

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

Quad 2-Input NOR,NAND Buffered B Series Gate

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

Quad 2-Input NOR,NAND Buffered B Series Gate

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

Quad 2-Input NOR Buffered B Series Gate . Quad 2-Input NAND Buffered B Series Gate

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

CMOS NOR Gates

TI

德州仪器

CMOS NOR Gates

TI

德州仪器

Quad 2-Input NOR,NAND Buffered B Series Gate

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

NOR GATE

STMICROELECTRONICS

意法半导体

QUADRUPLE 2 INPUT NOR GATE

HitachiHitachi Semiconductor

日立日立公司

Quadruple 2-input NOR gate

Philips

飞利浦

Quadruple 2-input NOR gate

Philips

飞利浦

Quadruple 2-input NOR gate

Philips

飞利浦

Quadruple 2-input NOR gate

Philips

飞利浦

COMPLEMENTARY METAL OXIDE SILICON

NTE

INPUT NOR GATE

RANDER & E International, Inc.

Quad 2 Input NOR Gate

TOSHIBA

东芝

QUAD 2 INPUT NOR GATE

TOSHIBA

东芝

MC14001产品属性

  • 类型

    描述

  • 型号

    MC14001

  • 制造商

    ONSEMI

  • 制造商全称

    ON Semiconductor

  • 功能描述

    Single Supply Quad Comparators

更新时间:2025-8-11 23:39:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON/安森美
25+
DIP
12360
ON/安森美原装特价MC14001BCP即刻询购立享优惠#长期有货
ON(安森美)
24+
标准封装
12048
全新原装正品/价格优惠/质量保障
MOT
23+
SOP14
20000
全新原装假一赔十
ON/安森美
25+
原厂封装
10280
原厂授权一级代理,专注军工、汽车、医疗、工业、新能源、电力!
ON
24+
SOP14
8500
只做原装正品假一赔十为客户做到零风险!!
ON(安森美)
2511
TSSOP-14
9850
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
ON/安森美
21+
NA
3855
只做原装,假一罚十
MOTOROLA/摩托罗拉
25+
CDIP14
13800
原装,请咨询
MOTOROLA/摩托罗拉
19+
MODULE
1290
主打模块,大量现货供应商QQ2355605126
ON Semiconductor Corporation
25+
SMD
918000
明嘉莱只做原装正品现货

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