B-Suffix Series CMOS Gates

TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

B-SUFFIX SERIES CMOS GATES

文件：134.49 Kbytes Page：12 Pages

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

B-Suffix Series CMOS Gates

文件：135.47 Kbytes Page：11 Pages

B-SUFFIX SERIES CMOS GATES

文件：134.49 Kbytes Page：12 Pages

封装/外壳：14-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC GATE NOR 4CH 2-INP 14-SOIC 集成电路（IC） 门和反相器

封装/外壳：14-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC GATE NOR 4CH 2-INP 14SOIC 集成电路（IC） 门和反相器

B-Suffix Series CMOS Gates

文件：135.47 Kbytes Page：11 Pages

B-SUFFIX SERIES CMOS GATES

文件：134.49 Kbytes Page：12 Pages

B-SUFFIX SERIES CMOS GATES

文件：134.49 Kbytes Page：12 Pages

B-Suffix Series CMOS Gates

文件：135.47 Kbytes Page：11 Pages

B-Suffix Series CMOS Gates

TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered

QUADRUPLE 2 INPUT NOR GATE

FEATURES • Quiescent Current = 0.5nA typ/pkg @5V • Noise Immunity = 45 of VDD typ • Capable of Driving Low-power Schottky TTL Load Over th Rated Temperature Range • Pin-for Pin Replacements for CD4001B and MC14001B Series

QUADRUPLE 2 INPUT NOR GATE

FEATURES • Quiescent Current = 0.5nA typ/pkg @5V • Noise Immunity = 45 of VDD typ • Capable of Driving Low-power Schottky TTL Load Over th Rated Temperature Range • Pin-for Pin Replacements for CD4001B and MC14001B Series

OB5269 MP3389 program combo power supply schematic diagram

文件：50.84 Kbytes Page：1 Pages

Dongcheng Road, Dongsheng Town, Zhongshan, Guandong, P.R.China

文件：171.28 Kbytes Page：1 Pages