位置:首页 > IC中文资料第2573页 > MBRF1090
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MBRF1090 | High Voltage Schottky Rectifiers FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum | VishayVishay Siliconix 威世威世科技公司 | ||
MBRF1090 | High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please s | VishayVishay Siliconix 威世威世科技公司 | ||
MBRF1090 | High-Voltage Schottky Rectifier FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum | VishayVishay Siliconix 威世威世科技公司 | ||
MBRF1090 | Isolation 10.0 AMPS. Schottky Barrier Rectifiers FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition | TSC 台湾半导体 | ||
MBRF1090 | 10 Amp Schottky Barrier Rectifier 20 to 100 Volts Features · Low Power Loss · High Efficiency · Low Forward Voltage , High Current Capability · High surge capacity · Case : ITO-220AC Full Molded Plastic Package | MCC | ||
MBRF1090 | SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE: 30 - 100 V CURRENT: 10 A FEATURES High surge capacity. For use in low voltage, high frequency inverters, free 111wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. | BILIN 银河微电 | ||
MBRF1090 | 10Amp schottky barrier rectifier 20to100 volts Features • Low Power Loss • High Efficiency • Low Forward Voltage , High Current Capability • High surge capacity • Case : ITO-220AC Full Molded Plastic Package | CHENYI 商朗电子 | ||
MBRF1090 | High-Voltage Schottky Rectifier FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, dc-to-dc c | LEIDITECH 雷卯电子 | ||
MBRF1090 | SCHOTTKY BARRIER RECTIFIER FEATURES Plastic package has Underwriters LaboratoryFlammability Classification 94V-0. Flame Retardant Epoxy Molding Compound. Low power loss, high efficiency. High current capability For use in low voltage, high frequency invertersfree wheeling, and polarlity protection applications. Lead f | SY 顺烨电子 | ||
MBRF1090 | Schottky Barrier Rectifiers Features ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection. | LUGUANG 鲁光电子 | ||
MBRF1090 | SCHOTTKY BARRIER RECTIFIERS FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection. | DSK | ||
MBRF1090 | Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Features • Low Power Loss • High Efficiency • Low Forward Voltage , High Current Capability • High surge capacity • Case : ITO-220AC Full Molded Plastic Package | KERSEMI | ||
MBRF1090 | Trench MOS Schottky technology Features • Low Power Loss • High Efficiency • Low Forward Voltage, High Current Capability • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 • Marking : type number | KERSEMI | ||
MBRF1090 | Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 This series of SWITCHMODE power rectifiers uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guard−Ring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Temperature • Epoxy Meets UL 9 | KERSEMI | ||
MBRF1090 | 10 AMPERES SCHOTTKY BARRIER RECTIFIERS FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0. Flame Retardant Epoxy Molding Compound. • Low power loss, high efficiency. • High current capability • For use in low voltage, high frequency inverters free wheeling, and polarlity protectio | DYELEC 迪一电子 | ||
MBRF1090 | 10 Amp Schottky Barrier Rectifier 20 to 100 Volts Features • Low Power Loss • High Efficiency • Low Forward Voltage , High Current Capability • High surge capacity • Case : ITO-220AC Full Molded Plastic Package | KERSEMI | ||
MBRF1090 | Guardring for overvoltage protection Features • Low Power Loss • High Efficiency • Low Forward Voltage , High Current Capability • High surge capacity • Case : ITO-220AC Full Molded Plastic Package | KERSEMI | ||
MBRF1090 | 10A, 90V, Schottky Rectifier | TSC 台湾半导体 | ||
MBRF1090 | Isolated 10.0 AMPS. Schottky Barrier Rectifiers 文件:327.97 Kbytes Page:2 Pages | LUGUANG 鲁光电子 | ||
MBRF1090 | Isolated 10.0 AMPS. Schottky Barrier Rectifiers 文件:140.27 Kbytes Page:2 Pages | TSC 台湾半导体 | ||
MBRF1090 | Isolated Schottky Barrier Rectifiers 文件:226.05 Kbytes Page:4 Pages | TSC 台湾半导体 | ||
MBRF1090 | 10.0 AMPS. Isolated Schottky Barrier Rectifiers 文件:150.28 Kbytes Page:2 Pages | TSC 台湾半导体 | ||
MBRF1090 | High-Voltage Schottky Rectifier 文件:141.37 Kbytes Page:5 Pages | VishayVishay Siliconix 威世威世科技公司 | ||
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please s | VishayVishay Siliconix 威世威世科技公司 | |||
Dual Common-Cathode High-Voltage Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC | VishayVishay Siliconix 威世威世科技公司 | |||
Dual High-Voltage Schottky Barrier Rectifiers Reverse Voltage 90 to 100 Volts Forward Current 10.0 Amperes Features ◆ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ◆ Dual rectifier construction, positive center tap ◆ Metal silicon junction, majority carrier conduction ◆ Low power loss, high efficiency | Good-Ark 固锝电子 | |||
Isolated 10.0 AMPS. Schottky Barrier Rectifiers FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition | TSC 台湾半导体 | |||
Isolated 10.0 AMPS. Schottky Barrier Rectifiers Features ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection. | LUGUANG 鲁光电子 | |||
TO-220F Plastic-Encapsulate Diodes SCHOTTKY BARRIER RECTIFIER FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters,Free Wheeling | TGS | |||
SCHOTTKY BARRIER RECTIFIERS FEATURES Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection. High surge capacity. For use in low voltage, high frequency inverters, free 111wheeling, and polarity protection applications. | SAMYANG 三阳电子 | |||
Guardring for overvoltage protection Features • Low Power Loss • High Efficiency • Low Forward Voltage , High Current Capability • High surge capacity • Case : ITO-220AC Full Molded Plastic Package | KERSEMI | |||
Plastic material used carries Underwriters Laboratory Classifications 94V-0 Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high frequency | KERSEMI | |||
SCHOTTKY BARRIER RECTIFIERS FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection. | DSK | |||
SCHOTTKY BARRIER RECTIFIER FEATURES ♦ High surge capacity. ♦ For use in low voltage, high frequency inverters,free wheeling,and polarity protection applications. ♦ Metal silicon junction,majority carrier conduction. ♦ High current capability,low forward voltage drop. ♦ Guard ring for over voltage protection. | CHENDA 辰达半导体 | |||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vish | VishayVishay Siliconix 威世威世科技公司 | |||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件:75.45 Kbytes Page:4 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件:90.77 Kbytes Page:5 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Dual Common-Cathode High-Voltage Schottky Rectifier 文件:82.12 Kbytes Page:5 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
10.0 AMPS. Isolated Schottky Barrier Rectifiers 文件:187.65 Kbytes Page:2 Pages | TSC 台湾半导体 | |||
Dual Common Cathode Schottky Rectifier 文件:226.37 Kbytes Page:4 Pages | TSC 台湾半导体 | |||
封装/外壳:TO-220-3 全封装,隔离接片 包装:管件 描述:DIODE ARRAY SCHOTT 90V ITO220AB 分立半导体产品 二极管 - 整流器 - 阵列 | TSC 台湾半导体 | |||
Dual Common-Cathode High-Voltage Schottky Rectifier 文件:82.12 Kbytes Page:5 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件:90.77 Kbytes Page:5 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件:83.44 Kbytes Page:5 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
封装/外壳:TO-220-3 全封装,隔离接片 包装:管件 描述:DIODE ARRAY SCHOTT 90V ITO220AB 分立半导体产品 二极管 - 整流器 - 阵列 | TSC 台湾半导体 | |||
Dual High Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世威世科技公司 | |||
High Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世威世科技公司 | |||
Inst, 50 Pr #16 Str BC, PVC-NYL Ins E1, OS, Blk PVC Jkt, 600V TC-ER 150V NPLF TFN Product Description UL Instrumentation, 50 Pair 16AWG (7x24) Bare Copper, PVC-NYL Insulation E1 Color Code, Overall Beldfoil® Shield, Black PVC Outer Jacket, 600V TC-ER 150V NPLF TFN 90C Dry 75C Wet SUN RES DIR BUR | BELDEN 百通 | |||
90 Watts, 50 Volts, Pulsed Avionics 1025 - 1150 MHz [GHz-Technology] GENERAL DESCRIPTION The 1090MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The transistor includes input prematch for broadband capability. The device has gold thinfilm metallization for proven highest MTTF. Low the | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
90 Watts, 50 Volts, Class C Avionics 1025 - 1150 MHz GENERAL DESCRIPTION The 1090MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for broadband capability. Low thermal resistance p | ADPOW | |||
90 Watts, 50 Volts, Class C Avionics 1025 - 1150 MHz GENERAL DESCRIPTION The 1090MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for broadband capability. Low thermal resistance p | Microsemi 美高森美 | |||
Non-Relampable Neon Indicator Lights 文件:220.44 Kbytes Page:1 Pages | CML |
MBRF1090产品属性
- 类型
描述
- 型号
MBRF1090
- 功能描述
肖特基二极管与整流器 10 Amp 90 Volt Single
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SHS |
2450+ |
TO-220 |
9485 |
只做原装正品现货或订货假一赔十! |
|||
SHS |
TO220 |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
性 |
24+ |
NA/ |
3260 |
原装现货,当天可交货,原型号开票 |
|||
TSC |
2447 |
TO-220F |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
22+ |
TO220F-3 |
20000 |
只做原装 |
||||
中性 |
23+ |
TO220F-3 |
50000 |
全新原装正品现货,支持订货 |
|||
TSC America Inc. |
22+ |
9000 |
原厂渠道,现货配单 |
||||
SHS |
24+ |
35200 |
一级代理/放心采购 |
||||
24+ |
3000 |
公司现货 |
|||||
SHS |
24+ |
TO220 |
990000 |
明嘉莱只做原装正品现货 |
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