Dual High-Voltage Schottky Barrier Rectifiers

Reverse Voltage 90 to 100 Volts Forward Current 10.0 Amperes Features ◆ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ◆ Dual rectifier construction, positive center tap ◆ Metal silicon junction, majority carrier conduction ◆ Low power loss, high efficiency

Isolated 10.0 AMPS. Schottky Barrier Rectifiers

FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition

TO-220F Plastic-Encapsulate Diodes

SCHOTTKY BARRIER RECTIFIER FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters,Free Wheeling

SCHOTTKY BARRIER RECTIFIER

FEATURES ♦ High surge capacity. ♦ For use in low voltage, high frequency inverters,free wheeling,and polarity protection applications. ♦ Metal silicon junction,majority carrier conduction. ♦ High current capability,low forward voltage drop. ♦ Guard ring for over voltage protection.

Guardring for overvoltage protection

Features • Low Power Loss • High Efficiency • Low Forward Voltage , High Current Capability • High surge capacity • Case : ITO-220AC Full Molded Plastic Package

Plastic material used carries Underwriters Laboratory Classifications 94V-0

Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high frequency

SCHOTTKY BARRIER RECTIFIERS

FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection.

Isolated 10.0 AMPS. Schottky Barrier Rectifiers

Features ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection.

SCHOTTKY BARRIER RECTIFIERS

FEATURES Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection. High surge capacity. For use in low voltage, high frequency inverters, free 111wheeling, and polarity protection applications.

Dual Common-Cathode High-Voltage Schottky Rectifier

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件：90.77 Kbytes Page：5 Pages

10A, 90V, Schottky Rectifier

Dual Common Cathode Schottky Rectifier

文件：226.37 Kbytes Page：4 Pages

10.0 AMPS. Isolated Schottky Barrier Rectifiers

文件：187.65 Kbytes Page：2 Pages

Dual Common-Cathode High-Voltage Schottky Rectifier

文件：82.12 Kbytes Page：5 Pages

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vish

封装/外壳：TO-220-3 全封装，隔离接片 包装：管件 描述：DIODE ARRAY SCHOTT 90V ITO220AB 分立半导体产品 二极管 - 整流器 - 阵列

Dual Common-Cathode High-Voltage Schottky Rectifier

文件：82.12 Kbytes Page：5 Pages

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件：90.77 Kbytes Page：5 Pages

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件：83.44 Kbytes Page：5 Pages

封装/外壳：TO-220-3 全封装，隔离接片 包装：管件 描述：DIODE ARRAY SCHOTT 90V ITO220AB 分立半导体产品 二极管 - 整流器 - 阵列

Dual High Voltage Trench MOS Barrier Schottky Rectifier

Inst, 50 Pr #16 Str BC, PVC-NYL Ins E1, OS, Blk PVC Jkt, 600V TC-ER 150V NPLF TFN

Product Description UL Instrumentation, 50 Pair 16AWG (7x24) Bare Copper, PVC-NYL Insulation E1 Color Code, Overall Beldfoil® Shield, Black PVC Outer Jacket, 600V TC-ER 150V NPLF TFN 90C Dry 75C Wet SUN RES DIR BUR

90 Watts, 50 Volts, Class C Avionics 1025 - 1150 MHz

GENERAL DESCRIPTION The 1090MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for broadband capability. Low thermal resistance p

90 Watts, 50 Volts, Pulsed Avionics 1025 - 1150 MHz

[GHz-Technology] GENERAL DESCRIPTION The 1090MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The transistor includes input prematch for broadband capability. The device has gold thinfilm metallization for proven highest MTTF. Low the

90 Watts, 50 Volts, Class C Avionics 1025 - 1150 MHz

GENERAL DESCRIPTION The 1090MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for broadband capability. Low thermal resistance p

Non-Relampable Neon Indicator Lights

文件：220.44 Kbytes Page：1 Pages