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MBRB2535价格
参考价格:¥3.1633
型号:MBRB2535CT-E3/81 品牌:VISHAY 备注:这里有MBRB2535多少钱,2025年最近7天走势,今日出价,今日竞价,MBRB2535批发/采购报价,MBRB2535行情走势销售排行榜,MBRB2535报价。型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
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MBRB2535 | 25 Amp Schottky Barrier Rectifier 20 to 100 Volts Features • Meatl of Silicon Rectifier, Majority Conducton • Guard ring for transient protection • Low Forward Voltage Drop • High Current Capability, High Efficiency • Low Power Loss | MCC | ||
MBRB2535 | High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance 文件:204.23 Kbytes Page:6 Pages | SMC 桑德斯微电子 | ||
SCHOTTKY RECTIFIER FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Dual rectifier construction, positive center-tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low forward voltage drop ♦ High surg | GE | |||
25 Amp Schottky Barrier Rectifier 20 to 100 Volts Features • Meatl of Silicon Rectifier, Majority Conducton • Guard ring for transient protection • Low Forward Voltage Drop • High Current Capability, High Efficiency • Low Power Loss | MCC | |||
Dual Schottky Barrier Rectifiers Reverse Voltage 35 to 60 Volts Forward Current 25.0 Amperes Features ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high effi | Good-Ark 固锝电子 | |||
Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | VishayVishay Siliconix 威世科技 | |||
Schottky Rectifier, 2 x 15 A FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | VishayVishay Siliconix 威世科技 | |||
25A Dual Schottky Rectifiers PRODUCT SUMMARY Voltage ratings available from 35 to 60 Volts FEATURES • Plastic packages have Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal-silicon junction, majority carrier conduction • Low power loss, hi | SSC Silicon Standard Corp. | |||
MBRB2535CT SCHOTTKY RECTIFIER Features 150℃ TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free | SMCDIODE 桑德斯微电子 | |||
MBRB2535CTL SCHOTTKY RECTIFIER Features 125℃ TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free | SMCDIODE 桑德斯微电子 | |||
SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package SWITCHMODE™ Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for us | ONSEMI 安森美半导体 | |||
SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package SWITCHMODE™ Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for us | ONSEMI 安森美半导体 | |||
SWITCHMODE Power Rectifier SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use | ONSEMI 安森美半导体 | |||
SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package SWITCHMODE™ Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for us | ONSEMI 安森美半导体 | |||
SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package SWITCHMODE™ Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for us | ONSEMI 安森美半导体 | |||
SWITCHMODE Power Rectifier SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use | ONSEMI 安森美半导体 | |||
SCHOTTKY RECTIFIER Description/ Features This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheel | IRF | |||
Schottky Rectifier, 2 x 15 A FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | VishayVishay Siliconix 威世科技 | |||
Schottky Rectifier, 2 x 15 A FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | VishayVishay Siliconix 威世科技 | |||
30 Amp Schottky Barrier Rectifier 20 to 60 Volts 文件:215.88 Kbytes Page:3 Pages | MCC | |||
SCHOTTKY RECTIFIER 文件:233.18 Kbytes Page:7 Pages | SMC 桑德斯微电子 | |||
Dual Common-Cathode Schottky Rectifier 文件:134.82 Kbytes Page:5 Pages | VishayVishay Siliconix 威世科技 | |||
封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:卷带(TR) 描述:DIODE ARRAY SCHOTTKY 35V D2PAK 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | ||
肖特基二极管 | ETC 知名厂家 | ETC | ||
DIODE:Power Schottky | FS | |||
肖特基二极管 | SMC 桑德斯微电子 | |||
Schottky Rectifier, 2 x 15 A 文件:128.74 Kbytes Page:6 Pages | VishayVishay Siliconix 威世科技 | |||
Schottky Rectifier, 2 x 15 A 文件:128.74 Kbytes Page:6 Pages | VishayVishay Siliconix 威世科技 | |||
Schottky Rectifier, 2 x 15 A 文件:128.74 Kbytes Page:6 Pages | VishayVishay Siliconix 威世科技 | |||
Schottky Rectifier, 2 x 15 A 文件:128.74 Kbytes Page:6 Pages | VishayVishay Siliconix 威世科技 | |||
Schottky Rectifier, 2 x 15 A 文件:128.74 Kbytes Page:6 Pages | VishayVishay Siliconix 威世科技 | |||
Schottky Rectifier, 2 x 15 A 文件:128.74 Kbytes Page:6 Pages | VishayVishay Siliconix 威世科技 | |||
封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:管件 描述:DIODE ARRAY SCHOTTKY 35V TO263AB 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | ||
Schottky Barrier Rectifier 文件:250.27 Kbytes Page:2 Pages | ISC 无锡固电 | |||
SCHOTTKY RECTIFIER 文件:254.27 Kbytes Page:7 Pages | SMC 桑德斯微电子 | |||
SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package 文件:105.66 Kbytes Page:6 Pages | Motorola 摩托罗拉 | |||
Schottky Rectifier, 2 x 15 A 文件:129.9 Kbytes Page:6 Pages | VishayVishay Siliconix 威世科技 | |||
Schottky Rectifier, 2 x 15 A 文件:129.9 Kbytes Page:6 Pages | VishayVishay Siliconix 威世科技 | |||
Schottky Rectifier, 2 x 15 A 文件:128.74 Kbytes Page:6 Pages | VishayVishay Siliconix 威世科技 | |||
Schottky Rectifier, 2 x 15 A 文件:128.74 Kbytes Page:6 Pages | VishayVishay Siliconix 威世科技 | |||
Schottky Rectifier, 2 x 15 A 文件:129.9 Kbytes Page:6 Pages | VishayVishay Siliconix 威世科技 | |||
Schottky Rectifier, 2 x 15 A 文件:128.74 Kbytes Page:6 Pages | VishayVishay Siliconix 威世科技 | |||
Schottky Rectifier, 2 x 15 A 文件:128.74 Kbytes Page:6 Pages | VishayVishay Siliconix 威世科技 | |||
Schottky Rectifier, 2 x 15 A 文件:129.9 Kbytes Page:6 Pages | VishayVishay Siliconix 威世科技 | |||
Schottky Rectifier, 2 x 15 A 文件:129.9 Kbytes Page:6 Pages | VishayVishay Siliconix 威世科技 | |||
Schottky Rectifier, 2 x 15 A 文件:128.74 Kbytes Page:6 Pages | VishayVishay Siliconix 威世科技 | |||
Schottky Rectifier, 2 x 15 A 文件:129.9 Kbytes Page:6 Pages | VishayVishay Siliconix 威世科技 | |||
Schottky Rectifier, 2 x 15 A 文件:128.74 Kbytes Page:6 Pages | VishayVishay Siliconix 威世科技 | |||
USB POWER CONTROL SWITCHES The A2525EL/M and A2535EL/M are integrated high-side power switches, optimized for self-powered and bus-powered Universal Serial Bus (USB) applications. Few external components are necessary to satisfy USB requirements. The A2525EL/EM ENABLE inputs are active high; the A2535EL/EM are active low. | ALLEGRO | |||
USB POWER CONTROL SWITCHES The A2525EL/M and A2535EL/M are integrated high-side power switches, optimized for self-powered and bus-powered Universal Serial Bus (USB) applications. Few external components are necessary to satisfy USB requirements. The A2525EL/EM ENABLE inputs are active high; the A2535EL/EM are active low. | ALLEGRO | |||
Threaded Smooth Bore Bushings 文件:154.07 Kbytes Page:1 Pages | Heyco | |||
Premier Supplier of Electronic Hardware 文件:5.0379 Mbytes Page:60 Pages | ABBATRON | |||
Capable of 1.8V Gate Drive, Lower Gate Charge 文件:128.47 Kbytes Page:7 Pages | A-POWER 富鼎先进电子 |
MBRB2535产品属性
- 类型
描述
- 型号
MBRB2535
- 制造商
MCC
- 制造商全称
Micro Commercial Components
- 功能描述
25 Amp Schottky Barrier Rectifier 20 to 100 Volts
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON(安森美) |
2511 |
标准封装 |
8000 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
ONSEMI/安森美 |
22+ |
TO-263 |
12500 |
原装正品支持实单 |
|||
IR |
24+ |
D2-PAK |
16800 |
绝对原装进口现货 假一赔十 价格优势!? |
|||
ON(安森美) |
25+ |
标准封装 |
8000 |
原装,请咨询 |
|||
ON/安森美 |
24+ |
TO-263-2 |
30000 |
原装正品公司现货,假一赔十! |
|||
ON |
24+ |
TO-263 |
5000 |
原厂授权代理 价格绝对优势 |
|||
ON/安森美 |
23+ |
TO-263 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
24+ |
N/A |
64000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
ON |
2015+ |
D2PAK3 |
12500 |
全新原装,现货库存长期供应 |
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MBRB2535规格书下载地址
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2019-8-6
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