25 Amp Schottky Barrier Rectifier 20 to 100 Volts

Features • Meatl of Silicon Rectifier, Majority Conducton • Guard ring for transient protection • Low Forward Voltage Drop • High Current Capability, High Efficiency • Low Power Loss

High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance

文件：204.23 Kbytes Page：6 Pages

25A Dual Schottky Rectifiers

PRODUCT SUMMARY Voltage ratings available from 35 to 60 Volts FEATURES • Plastic packages have Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal-silicon junction, majority carrier conduction • Low power loss, hi

SCHOTTKY RECTIFIER

FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Dual rectifier construction, positive center-tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low forward voltage drop ♦ High surg

MBRB2535CT SCHOTTKY RECTIFIER

Features 150℃ TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free

DIODE:Power Schottky

分立

25 Amp Schottky Barrier Rectifier 20 to 100 Volts

Features • Meatl of Silicon Rectifier, Majority Conducton • Guard ring for transient protection • Low Forward Voltage Drop • High Current Capability, High Efficiency • Low Power Loss

Dual Schottky Barrier Rectifiers

Reverse Voltage 35 to 60 Volts Forward Current 25.0 Amperes Features ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high effi

Dual Common-Cathode Schottky Rectifier

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-

Schottky Rectifier, 2 x 15 A

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-

SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package

SWITCHMODE™ Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for us

MBRB2535CTL SCHOTTKY RECTIFIER

Features 125℃ TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free

SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package

SWITCHMODE™ Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for us

SWITCHMODE Power Rectifier

SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use

SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package

SWITCHMODE™ Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for us

SWITCHMODE Power Rectifier

SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use

SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package

SWITCHMODE™ Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for us

SCHOTTKY RECTIFIER

Description/ Features This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheel

Schottky Rectifier, 2 x 15 A

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-

Schottky Rectifier, 2 x 15 A

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-

30 Amp Schottky Barrier Rectifier 20 to 60 Volts

文件：215.88 Kbytes Page：3 Pages

Dual Common-Cathode Schottky Rectifier

文件：134.82 Kbytes Page：5 Pages

SCHOTTKY RECTIFIER

文件：233.18 Kbytes Page：7 Pages

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：卷带（TR） 描述：DIODE ARRAY SCHOTTKY 35V D2PAK 分立半导体产品 二极管 - 整流器 - 阵列

肖特基二极管

肖特基二极管

Schottky Rectifier, 2 x 15 A

文件：128.74 Kbytes Page：6 Pages

Schottky Rectifier, 2 x 15 A

文件：128.74 Kbytes Page：6 Pages

Schottky Rectifier, 2 x 15 A

文件：128.74 Kbytes Page：6 Pages

Schottky Rectifier, 2 x 15 A

文件：128.74 Kbytes Page：6 Pages

Schottky Rectifier, 2 x 15 A

文件：128.74 Kbytes Page：6 Pages

Schottky Rectifier, 2 x 15 A

文件：128.74 Kbytes Page：6 Pages

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：DIODE ARRAY SCHOTTKY 35V TO263AB 分立半导体产品 二极管 - 整流器 - 阵列

SCHOTTKY RECTIFIER

文件：254.27 Kbytes Page：7 Pages

丝印代码：D2PAK；Schottky Barrier Rectifier

文件：250.27 Kbytes Page：2 Pages

SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package

文件：105.66 Kbytes Page：6 Pages

Schottky Rectifier, 2 x 15 A

文件：129.9 Kbytes Page：6 Pages

Schottky Rectifier, 2 x 15 A

文件：128.74 Kbytes Page：6 Pages

Schottky Rectifier, 2 x 15 A

文件：129.9 Kbytes Page：6 Pages

Schottky Rectifier, 2 x 15 A

文件：128.74 Kbytes Page：6 Pages

Schottky Rectifier, 2 x 15 A

文件：128.74 Kbytes Page：6 Pages

Schottky Rectifier, 2 x 15 A

文件：129.9 Kbytes Page：6 Pages

Schottky Rectifier, 2 x 15 A

文件：129.9 Kbytes Page：6 Pages

Schottky Rectifier, 2 x 15 A

文件：128.74 Kbytes Page：6 Pages

Schottky Rectifier, 2 x 15 A

文件：129.9 Kbytes Page：6 Pages

Schottky Rectifier, 2 x 15 A

文件：128.74 Kbytes Page：6 Pages

Schottky Rectifier, 2 x 15 A

文件：128.74 Kbytes Page：6 Pages

Schottky Rectifier, 2 x 15 A

文件：129.9 Kbytes Page：6 Pages

SWITCHMODE??Power Rectifiers

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse

SWITCHMODE??Power Rectifiers

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse

SWITCHMODE??Power Rectifier

. . . employing the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes,

MEDIUM CURRENT OVERVOLTAGE TRANSIENT SUPPRESSORS

Overvoltage Transient Suppressors . . . designed for applications requiring a low voltage rectifier with reverse avalanche characteristics for use as reverse power transient suppressors. Developed to suppress transients in the automotive system, these devices operate in the forward mode as standa