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MBRB2535CT价格
参考价格:¥3.1633
型号:MBRB2535CT-E3/81 品牌:VISHAY 备注:这里有MBRB2535CT多少钱,2025年最近7天走势,今日出价,今日竞价,MBRB2535CT批发/采购报价,MBRB2535CT行情走势销售排行榜,MBRB2535CT报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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MBRB2535CT | 25 Amp Schottky Barrier Rectifier 20 to 100 Volts Features • Meatl of Silicon Rectifier, Majority Conducton • Guard ring for transient protection • Low Forward Voltage Drop • High Current Capability, High Efficiency • Low Power Loss | MCC 美微科 | ||
MBRB2535CT | Dual Schottky Barrier Rectifiers Reverse Voltage 35 to 60 Volts Forward Current 25.0 Amperes Features ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high effi | Good-Ark 固锝电子 | ||
MBRB2535CT | Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | VishayVishay Siliconix 威世科技威世科技半导体 | ||
MBRB2535CT | Schottky Rectifier, 2 x 15 A FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | VishayVishay Siliconix 威世科技威世科技半导体 | ||
MBRB2535CT | 25A Dual Schottky Rectifiers PRODUCT SUMMARY Voltage ratings available from 35 to 60 Volts FEATURES • Plastic packages have Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal-silicon junction, majority carrier conduction • Low power loss, hi | SSC Silicon Standard Corp. | ||
MBRB2535CT | SCHOTTKY RECTIFIER FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Dual rectifier construction, positive center-tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low forward voltage drop ♦ High surg | GE GE Industrial Company | ||
MBRB2535CT | MBRB2535CT SCHOTTKY RECTIFIER Features 150℃ TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free | SMCDIODE 桑德斯微电子 | ||
MBRB2535CT | 30 Amp Schottky Barrier Rectifier 20 to 60 Volts 文件:215.88 Kbytes Page:3 Pages | MCC 美微科 | ||
MBRB2535CT | SCHOTTKY RECTIFIER 文件:233.18 Kbytes Page:7 Pages | SMCSangdest Microelectronic (Nanjing) Co., Ltd 烧结金属 | ||
MBRB2535CT | 封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:卷带(TR) 描述:DIODE ARRAY SCHOTTKY 35V D2PAK 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | |
MBRB2535CT | 封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:卷带(TR) 描述:DIODE SCHOTTKY 35V D2PAK 分立半导体产品 二极管 - 整流器 - 阵列 | SMCDIODE 桑德斯微电子 | ||
MBRB2535CT | Dual Common-Cathode Schottky Rectifier 文件:134.82 Kbytes Page:5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | ||
SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package SWITCHMODE™ Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for us | ONSEMI 安森美半导体 | |||
MBRB2535CTL SCHOTTKY RECTIFIER Features 125℃ TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free | SMCDIODE 桑德斯微电子 | |||
SWITCHMODE Power Rectifier SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use | ONSEMI 安森美半导体 | |||
SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package SWITCHMODE™ Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for us | ONSEMI 安森美半导体 | |||
SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package SWITCHMODE™ Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for us | ONSEMI 安森美半导体 | |||
SWITCHMODE Power Rectifier SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use | ONSEMI 安森美半导体 | |||
SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package SWITCHMODE™ Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for us | ONSEMI 安森美半导体 | |||
SCHOTTKY RECTIFIER Description/ Features This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheel | IRF | |||
Schottky Rectifier, 2 x 15 A FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Schottky Rectifier, 2 x 15 A FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Schottky Rectifier, 2 x 15 A 文件:128.74 Kbytes Page:6 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Schottky Rectifier, 2 x 15 A 文件:128.74 Kbytes Page:6 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Schottky Rectifier, 2 x 15 A 文件:128.74 Kbytes Page:6 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Schottky Rectifier, 2 x 15 A 文件:128.74 Kbytes Page:6 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Schottky Rectifier, 2 x 15 A 文件:128.74 Kbytes Page:6 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Schottky Rectifier, 2 x 15 A 文件:128.74 Kbytes Page:6 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SCHOTTKY RECTIFIER 文件:254.27 Kbytes Page:7 Pages | SMCSangdest Microelectronic (Nanjing) Co., Ltd 烧结金属 | |||
SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package 文件:105.66 Kbytes Page:6 Pages | Motorola 摩托罗拉 | |||
Schottky Barrier Rectifier 文件:250.27 Kbytes Page:2 Pages | ISC 无锡固电 | |||
Schottky Rectifier, 2 x 15 A 文件:129.9 Kbytes Page:6 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Schottky Rectifier, 2 x 15 A 文件:129.9 Kbytes Page:6 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Schottky Rectifier, 2 x 15 A 文件:128.74 Kbytes Page:6 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Schottky Rectifier, 2 x 15 A 文件:128.74 Kbytes Page:6 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Schottky Rectifier, 2 x 15 A 文件:129.9 Kbytes Page:6 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Schottky Rectifier, 2 x 15 A 文件:128.74 Kbytes Page:6 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Schottky Rectifier, 2 x 15 A 文件:128.74 Kbytes Page:6 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Schottky Rectifier, 2 x 15 A 文件:129.9 Kbytes Page:6 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Schottky Rectifier, 2 x 15 A 文件:129.9 Kbytes Page:6 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Schottky Rectifier, 2 x 15 A 文件:128.74 Kbytes Page:6 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Schottky Rectifier, 2 x 15 A 文件:129.9 Kbytes Page:6 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Schottky Rectifier, 2 x 15 A 文件:128.74 Kbytes Page:6 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
USB POWER CONTROL SWITCHES The A2525EL/M and A2535EL/M are integrated high-side power switches, optimized for self-powered and bus-powered Universal Serial Bus (USB) applications. Few external components are necessary to satisfy USB requirements. The A2525EL/EM ENABLE inputs are active high; the A2535EL/EM are active low. | ALLEGRO | |||
USB POWER CONTROL SWITCHES The A2525EL/M and A2535EL/M are integrated high-side power switches, optimized for self-powered and bus-powered Universal Serial Bus (USB) applications. Few external components are necessary to satisfy USB requirements. The A2525EL/EM ENABLE inputs are active high; the A2535EL/EM are active low. | ALLEGRO | |||
Threaded Smooth Bore Bushings 文件:154.07 Kbytes Page:1 Pages | HeycoHeyco. 海科 | |||
Premier Supplier of Electronic Hardware 文件:5.0379 Mbytes Page:60 Pages | ABBATRON | |||
Capable of 1.8V Gate Drive, Lower Gate Charge 文件:128.47 Kbytes Page:7 Pages | A-POWER 富鼎先进电子 |
MBRB2535CT产品属性
- 类型
描述
- 型号
MBRB2535CT
- 功能描述
肖特基二极管与整流器 25 Amp 35 Volt Common Cathode
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON(安森美) |
25+ |
标准封装 |
8000 |
原装,请咨询 |
|||
ONSEMI/安森美 |
22+ |
TO-263 |
12500 |
原装正品支持实单 |
|||
ON/安森美 |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
ON/安森美 |
25+ |
D2PAK-3 |
860000 |
明嘉莱只做原装正品现货 |
|||
0N |
25+ |
TO220 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
ON(安森美) |
23+ |
TO-263-2 |
11965 |
公司只做原装正品,假一赔十 |
|||
MOTOROLA |
2016+ |
TO263 |
6523 |
只做进口原装现货!假一赔十! |
|||
ON/安森美 |
24+ |
TO-263-2 |
30000 |
原装正品公司现货,假一赔十! |
|||
ON/安森美 |
2023+ |
TO-263 |
2295 |
一级代理优势现货,全新正品直营店 |
|||
ON(安森美) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
MBRB2535CT芯片相关品牌
MBRB2535CT规格书下载地址
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MBRB2535CT数据表相关新闻
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2021-1-2MBRD1045T4G原装环保现货
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2021-1-1MBRB1045T4G
肖特基二极管与整流器 10A 45V
2019-8-6
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