MBRB2535CT价格

参考价格:¥3.1633

型号:MBRB2535CT-E3/81 品牌:VISHAY 备注:这里有MBRB2535CT多少钱,2025年最近7天走势,今日出价,今日竞价,MBRB2535CT批发/采购报价,MBRB2535CT行情走势销售排行榜,MBRB2535CT报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MBRB2535CT

25 Amp Schottky Barrier Rectifier 20 to 100 Volts

Features • Meatl of Silicon Rectifier, Majority Conducton • Guard ring for transient protection • Low Forward Voltage Drop • High Current Capability, High Efficiency • Low Power Loss

MCC

MBRB2535CT

Dual Schottky Barrier Rectifiers

Reverse Voltage 35 to 60 Volts Forward Current 25.0 Amperes Features ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high effi

Good-Ark

固锝电子

MBRB2535CT

Dual Common-Cathode Schottky Rectifier

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-

VishayVishay Siliconix

威世科技

MBRB2535CT

Schottky Rectifier, 2 x 15 A

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-

VishayVishay Siliconix

威世科技

MBRB2535CT

25A Dual Schottky Rectifiers

PRODUCT SUMMARY Voltage ratings available from 35 to 60 Volts FEATURES • Plastic packages have Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal-silicon junction, majority carrier conduction • Low power loss, hi

SSC

Silicon Standard Corp.

MBRB2535CT

SCHOTTKY RECTIFIER

FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Dual rectifier construction, positive center-tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low forward voltage drop ♦ High surg

GE

MBRB2535CT

MBRB2535CT SCHOTTKY RECTIFIER

Features 150℃ TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free

SMCDIODE

桑德斯微电子

MBRB2535CT

封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:卷带(TR) 描述:DIODE ARRAY SCHOTTKY 35V D2PAK 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

MBRB2535CT

封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:卷带(TR) 描述:DIODE SCHOTTKY 35V D2PAK 分立半导体产品 二极管 - 整流器 - 阵列

SMCDIODE

桑德斯微电子

MBRB2535CT

肖特基二极管

ETC

知名厂家

MBRB2535CT

DIODE:Power Schottky

FS

MBRB2535CT

肖特基二极管

SMC

桑德斯微电子

MBRB2535CT

30 Amp Schottky Barrier Rectifier 20 to 60 Volts

文件:215.88 Kbytes Page:3 Pages

MCC

MBRB2535CT

SCHOTTKY RECTIFIER

文件:233.18 Kbytes Page:7 Pages

SMC

桑德斯微电子

MBRB2535CT

Dual Common-Cathode Schottky Rectifier

文件:134.82 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技

SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package

SWITCHMODE™ Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for us

ONSEMI

安森美半导体

MBRB2535CTL SCHOTTKY RECTIFIER

Features 125℃ TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free

SMCDIODE

桑德斯微电子

SWITCHMODE Power Rectifier

SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use

ONSEMI

安森美半导体

SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package

SWITCHMODE™ Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for us

ONSEMI

安森美半导体

SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package

SWITCHMODE™ Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for us

ONSEMI

安森美半导体

SWITCHMODE Power Rectifier

SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use

ONSEMI

安森美半导体

SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package

SWITCHMODE™ Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for us

ONSEMI

安森美半导体

SCHOTTKY RECTIFIER

Description/ Features This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheel

IRF

Schottky Rectifier, 2 x 15 A

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-

VishayVishay Siliconix

威世科技

Schottky Rectifier, 2 x 15 A

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-

VishayVishay Siliconix

威世科技

Schottky Rectifier, 2 x 15 A

文件:128.74 Kbytes Page:6 Pages

VishayVishay Siliconix

威世科技

Schottky Rectifier, 2 x 15 A

文件:128.74 Kbytes Page:6 Pages

VishayVishay Siliconix

威世科技

Schottky Rectifier, 2 x 15 A

文件:128.74 Kbytes Page:6 Pages

VishayVishay Siliconix

威世科技

Schottky Rectifier, 2 x 15 A

文件:128.74 Kbytes Page:6 Pages

VishayVishay Siliconix

威世科技

Schottky Rectifier, 2 x 15 A

文件:128.74 Kbytes Page:6 Pages

VishayVishay Siliconix

威世科技

Schottky Rectifier, 2 x 15 A

文件:128.74 Kbytes Page:6 Pages

VishayVishay Siliconix

威世科技

SCHOTTKY RECTIFIER

文件:254.27 Kbytes Page:7 Pages

SMC

桑德斯微电子

SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package

文件:105.66 Kbytes Page:6 Pages

Motorola

摩托罗拉

Schottky Barrier Rectifier

文件:250.27 Kbytes Page:2 Pages

ISC

无锡固电

Schottky Rectifier, 2 x 15 A

文件:129.9 Kbytes Page:6 Pages

VishayVishay Siliconix

威世科技

Schottky Rectifier, 2 x 15 A

文件:129.9 Kbytes Page:6 Pages

VishayVishay Siliconix

威世科技

Schottky Rectifier, 2 x 15 A

文件:128.74 Kbytes Page:6 Pages

VishayVishay Siliconix

威世科技

Schottky Rectifier, 2 x 15 A

文件:128.74 Kbytes Page:6 Pages

VishayVishay Siliconix

威世科技

Schottky Rectifier, 2 x 15 A

文件:129.9 Kbytes Page:6 Pages

VishayVishay Siliconix

威世科技

Schottky Rectifier, 2 x 15 A

文件:128.74 Kbytes Page:6 Pages

VishayVishay Siliconix

威世科技

Schottky Rectifier, 2 x 15 A

文件:128.74 Kbytes Page:6 Pages

VishayVishay Siliconix

威世科技

Schottky Rectifier, 2 x 15 A

文件:129.9 Kbytes Page:6 Pages

VishayVishay Siliconix

威世科技

Schottky Rectifier, 2 x 15 A

文件:129.9 Kbytes Page:6 Pages

VishayVishay Siliconix

威世科技

Schottky Rectifier, 2 x 15 A

文件:128.74 Kbytes Page:6 Pages

VishayVishay Siliconix

威世科技

Schottky Rectifier, 2 x 15 A

文件:129.9 Kbytes Page:6 Pages

VishayVishay Siliconix

威世科技

Schottky Rectifier, 2 x 15 A

文件:128.74 Kbytes Page:6 Pages

VishayVishay Siliconix

威世科技

USB POWER CONTROL SWITCHES

The A2525EL/M and A2535EL/M are integrated high-side power switches, optimized for self-powered and bus-powered Universal Serial Bus (USB) applications. Few external components are necessary to satisfy USB requirements. The A2525EL/EM ENABLE inputs are active high; the A2535EL/EM are active low.

ALLEGRO

USB POWER CONTROL SWITCHES

The A2525EL/M and A2535EL/M are integrated high-side power switches, optimized for self-powered and bus-powered Universal Serial Bus (USB) applications. Few external components are necessary to satisfy USB requirements. The A2525EL/EM ENABLE inputs are active high; the A2535EL/EM are active low.

ALLEGRO

Threaded Smooth Bore Bushings

文件:154.07 Kbytes Page:1 Pages

Heyco

Premier Supplier of Electronic Hardware

文件:5.0379 Mbytes Page:60 Pages

ABBATRON

Capable of 1.8V Gate Drive, Lower Gate Charge

文件:128.47 Kbytes Page:7 Pages

A-POWER

富鼎先进电子

MBRB2535CT产品属性

  • 类型

    描述

  • 型号

    MBRB2535CT

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    Schottky Rectifier, 2 x 15 A

更新时间:2025-10-6 13:18:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON(安森美)
2021/2022+
标准封装
8000
原厂原装现货订货价格优势终端BOM表可配单提供样品
ONSEMI/安森美
2410+
TO-263
80000
原装正品.假一赔百.正规渠道.原厂追溯.
ON
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
IR
24+
D2-PAK
16800
绝对原装进口现货 假一赔十 价格优势!?
ON/安森美
24+
TO-263-2
30000
原装正品公司现货,假一赔十!
ON(安森美)
2511
标准封装
8000
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
ONSEMI/安森美
22+
TO-263
12500
原装正品支持实单
ON(安森美)
25+
标准封装
8000
原装,请咨询
ON
24+
TO-263
5000
原厂授权代理 价格绝对优势
ON/安森美
23+
800
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种

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