MBRB2535CT价格
参考价格：￥3.1633
型号：MBRB2535CT-E3/81 品牌：VISHAY 备注：这里有MBRB2535CT多少钱，2026年最近7天走势，今日出价，今日竞价，MBRB2535CT批发/采购报价，MBRB2535CT行情走势销售排行榜，MBRB2535CT报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MBRB2535CT | Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | VISHAYVishay Siliconix 威世威世科技公司 |   | |
MBRB2535CT | Schottky Rectifier, 2 x 15 A FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | VISHAYVishay Siliconix 威世威世科技公司 | | |
MBRB2535CT | Dual Schottky Barrier Rectifiers Reverse Voltage 35 to 60 Volts Forward Current 25.0 Amperes Features ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high effi | GOOD-ARK 固锝电子 | | |
MBRB2535CT | 25 Amp Schottky Barrier Rectifier 20 to 100 Volts Features • Meatl of Silicon Rectifier, Majority Conducton • Guard ring for transient protection • Low Forward Voltage Drop • High Current Capability, High Efficiency • Low Power Loss | MCC | | |
MBRB2535CT | SCHOTTKY RECTIFIER FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Dual rectifier construction, positive center-tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low forward voltage drop ♦ High surg | GE | | |
MBRB2535CT | 25A Dual Schottky Rectifiers PRODUCT SUMMARY Voltage ratings available from 35 to 60 Volts FEATURES • Plastic packages have Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal-silicon junction, majority carrier conduction • Low power loss, hi | SSC Silicon Standard Corp. | | |
MBRB2535CT | MBRB2535CT SCHOTTKY RECTIFIER Features 150℃ TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free | SMCDIODE 桑德斯微电子 | | |
MBRB2535CT | DIODE:Power Schottky 分立 | FS | | |
MBRB2535CT | 肖特基二极管 | SMC 桑德斯微电子 | | |
MBRB2535CT | 封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：卷带（TR） 描述：DIODE SCHOTTKY 35V D2PAK 分立半导体产品 二极管 - 整流器 - 阵列 | SMCDIODE 桑德斯微电子 | | |
MBRB2535CT | 肖特基二极管 | YUNYI | | |
MBRB2535CT | SCHOTTKY RECTIFIER 文件：233.18 Kbytes Page：7 Pages | SMC 桑德斯微电子 | | |
MBRB2535CT | 30 Amp Schottky Barrier Rectifier 20 to 60 Volts 文件：215.88 Kbytes Page：3 Pages | MCC | | |
MBRB2535CT | 封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：卷带（TR） 描述：DIODE ARRAY SCHOTTKY 35V D2PAK 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | |
MBRB2535CT | Dual Common-Cathode Schottky Rectifier 文件：134.82 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package SWITCHMODE™ Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for us | ONSEMI 安森美半导体 | | ||
MBRB2535CTL SCHOTTKY RECTIFIER Features 125℃ TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free | SMCDIODE 桑德斯微电子 | | ||
SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package SWITCHMODE™ Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for us | ONSEMI 安森美半导体 | | ||
SWITCHMODE Power Rectifier SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use | ONSEMI 安森美半导体 | | ||
SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package SWITCHMODE™ Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for us | ONSEMI 安森美半导体 | | ||
SWITCHMODE Power Rectifier SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use | ONSEMI 安森美半导体 | | ||
SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package SWITCHMODE™ Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for us | ONSEMI 安森美半导体 | | ||
SCHOTTKY RECTIFIER Description/ Features This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheel | IRF | | ||
Schottky Rectifier, 2 x 15 A FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Schottky Rectifier, 2 x 15 A FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Schottky Rectifier, 2 x 15 A 文件：128.74 Kbytes Page：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Schottky Rectifier, 2 x 15 A 文件：128.74 Kbytes Page：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Schottky Rectifier, 2 x 15 A 文件：128.74 Kbytes Page：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Schottky Rectifier, 2 x 15 A 文件：128.74 Kbytes Page：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Schottky Rectifier, 2 x 15 A 文件：128.74 Kbytes Page：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Schottky Rectifier, 2 x 15 A 文件：128.74 Kbytes Page：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
丝印代码：D2PAK；Schottky Barrier Rectifier 文件：250.27 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package 文件：105.66 Kbytes Page：6 Pages | MOTOROLA 摩托罗拉 | | ||
SCHOTTKY RECTIFIER 文件：254.27 Kbytes Page：7 Pages | SMC 桑德斯微电子 | | ||
Schottky Rectifier, 2 x 15 A 文件：129.9 Kbytes Page：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Schottky Rectifier, 2 x 15 A 文件：128.74 Kbytes Page：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Schottky Rectifier, 2 x 15 A 文件：129.9 Kbytes Page：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Schottky Rectifier, 2 x 15 A 文件：128.74 Kbytes Page：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Schottky Rectifier, 2 x 15 A 文件：128.74 Kbytes Page：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Schottky Rectifier, 2 x 15 A 文件：129.9 Kbytes Page：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Schottky Rectifier, 2 x 15 A 文件：129.9 Kbytes Page：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Schottky Rectifier, 2 x 15 A 文件：128.74 Kbytes Page：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Schottky Rectifier, 2 x 15 A 文件：129.9 Kbytes Page：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Schottky Rectifier, 2 x 15 A 文件：128.74 Kbytes Page：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Schottky Rectifier, 2 x 15 A 文件：128.74 Kbytes Page：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Schottky Rectifier, 2 x 15 A 文件：129.9 Kbytes Page：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
SWITCHMODE??Power Rectifiers SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse | MOTOROLA 摩托罗拉 | | ||
SWITCHMODE??Power Rectifiers SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse | MOTOROLA 摩托罗拉 | | ||
SWITCHMODE??Power Rectifier . . . employing the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes, | MOTOROLA 摩托罗拉 | | ||
MEDIUM CURRENT OVERVOLTAGE TRANSIENT SUPPRESSORS Overvoltage Transient Suppressors . . . designed for applications requiring a low voltage rectifier with reverse avalanche characteristics for use as reverse power transient suppressors. Developed to suppress transients in the automotive system, these devices operate in the forward mode as standa | MOTOROLA 摩托罗拉 | |
MBRB2535CT产品属性
- 类型
描述
- VRM (V)：
35
- IFSM (A)：
150
- IF (A)：
30
- VF (V)：
0.82
- IFM (A)：
30
- TRR (μs)：
- IR (μA)：
200
- @VR (V)：
35
- Package Qty：
Tube
- FIT：
48; Tj=100℃
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
24+ |
标准封装 |
13048 |
全新原装正品/价格优惠/质量保障 |
|||
MOTOROLA |
2016+ |
TO263 |
3500 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
25+ |
11 |
公司优势库存 热卖中! |
|||||
ON |
23+ |
SOD123 |
12000 |
正规渠道,只有原装! |
|||
24+ |
3000 |
公司现货 |
|||||
ACUTE |
2447 |
SMD5 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ON/安森美 |
22+ |
DO-219AB |
20000 |
公司只有原装 品质保障 |
|||
ON |
23+ |
D2PAK |
56000 |
||||
MCC/美微科 |
25+ |
SOD123 |
98192 |
价格从优 欢迎来电咨询 |
|||
ON |
15+ |
SOD123 |
12000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
MBRB2535CT规格书下载地址
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2019-8-6
DdatasheetPDF页码索引
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