MBR2535CT价格

参考价格:¥3.8493

型号:MBR2535CT 品牌:Fairchild 备注:这里有MBR2535CT多少钱,2025年最近7天走势,今日出价,今日竞价,MBR2535CT批发/采购报价,MBR2535CT行情走势销售排行榜,MBR2535CT报价。
型号 功能描述 生产厂家&企业 LOGO 操作
MBR2535CT

SWITCHMODE??Power Rectifiers

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse

Motorola

摩托罗拉

MBR2535CT

30 Ampere Schottky Barrier Rectifiers

Features • Low power loss, high efficiency. • High surge capacity. • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. • Metal silicon junction, majority carrier conduction. • High current capacity, low forward voltage drop. •

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MBR2535CT

30A SCHOTTKY BARRIER RECTIFIER

Features • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity

DIODES

美台半导体

MBR2535CT

SCHOTTKY RECTIFIER

Reverse Voltage - 35 to 60 Volts Forward Current - 30.0 Amperes FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Dual rectifier construction, positive center-tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss,

GE

GE Industrial Company

MBR2535CT

25 Amp Schottky Barrier Rectifier 20 to 100 Volts

Features • Guard Ring For Transient Protection • High Current Capability, High Efficiency • Halogen Free Available Upon Request By Adding Suffix -HF • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix Designates Compliant. See Ordering Information) • Epoxy Meets UL 94 V-0 Flammability Rating

MCC

美微科

MBR2535CT

30 AMP SCHOTTKY BARRIER RECTIFIER

30 AMP SCHOTTKY BARRIER RECTIFIER Schottky barrier rectifier Guard ring for reverse protection Low power loss, high efficiency High surge capacity VRRM 35 to 45 Volts

Microsemi

美高森美

MBR2535CT

25.0 AMPS. Schottky Barrier Rectifiers

FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition

TSC

台湾半导体

MBR2535CT

Wide Temperature Range and High Tjm Schottky Barrier Rectifiers

FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applica

SIRECTIFIER

矽莱克电子

MBR2535CT

Dual Common-Cathode Schottky Rectifier

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-

VishayVishay Siliconix

威世科技威世科技半导体

MBR2535CT

25Amp schottky barrier rectifier 20to100 volts

Features • Meatl of Silicon Rectifier, Majority Conducton • Guard ring for transient protection • High surge capacity • High Current Capability, High Efficiency • Low Power Loss

CHENYI

商朗电子

MBR2535CT

SWITCHMODE Power Rectifiers

SWITCHMODE™ Power Rectifiers The MBR2535CT/45CT series uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guardring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Tempe

ONSEMI

安森美半导体

MBR2535CT

Dual Schottky Barrier Rectifiers

Reverse Voltage 35 to 60 Volts Forward Current 25.0 Amperes Features ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high effi

Good-Ark

MBR2535CT

SCHOTTKY BARRIER RECTIFIER

SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE: 30 - 100 V CURRENT: 30 A FEATURES Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection. High surge capacity. For use in low voltage, high freq

BILIN

银河微电

MBR2535CT

25A Dual Schottky Rectifiers

PRODUCT SUMMARY Voltage ratings available from 35 to 60 Volts FEATURES • Plastic packages have Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal-silicon junction, majority carrier conduction • Low power loss, hi

SSC

Silicon Standard Corp.

MBR2535CT

25 Amp Schottky Barrier Rectifier 20 to 100 Volts

Features ● Meatl of Silicon Rectifier, Majority Conducton ● Guard ring for transient protection ● High surge capacity ● High Current Capability, High Efficiency ● Low Power Loss

KERSEMI

MBR2535CT

25.0AMP. Schottky Barrier Rectifiers

Features ♦ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low forward voltage drop ♦ High surge capability ♦ For use in low voltage, hig

LUGUANG

鲁光电子

MBR2535CT

Plastic package has Underwriters Laboratory Flammability Classifications 94V-0

Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high frequency

KERSEMI

MBR2535CT

Plastic package has Underwriters Laboratory Flammability Classifications 94V-0

Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high frequency

KERSEMI

MBR2535CT

SCHOTTKY BARRIER RECTIFIERS

FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection.

DSK

MBR2535CT

SWITCHMODE Power Rectifiers

SWITCHMODE™ Power Rectifiers The MBR2535CT/45CT series uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guardring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Tempe

KERSEMI

MBR2535CT

25.0 AMPS. Schottky Barrier Rectifiers

Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high frequency

KERSEMI

MBR2535CT

MBR2535CT SCHOTTKY RECTIFIER

Features 150C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Fr

SMCDIODE

桑德斯微电子

MBR2535CT

封装/外壳:TO-220-3 包装:卷带(TR)剪切带(CT) 描述:DIODE ARRAY SCHOTTKY 35V TO220AB 分立半导体产品 二极管 - 整流器 - 阵列

ONSEMI

安森美半导体

MBR2535CT

30A SCHOTTKY RECTIFIERS

文件:435.56 Kbytes Page:2 Pages

DIGITRON

MBR2535CT

Dual Common Cathode Schottky Rectifier

文件:161.98 Kbytes Page:6 Pages

VishayVishay Siliconix

威世科技威世科技半导体

MBR2535CT

High Tjm Low IRRM Schottky Barrier Diodes

文件:92.43 Kbytes Page:2 Pages

SIRECTIFIER

矽莱克电子

MBR2535CT

25 Amp Schottky Barrier Rectifier 20 to 100 Volts

文件:243.23 Kbytes Page:3 Pages

MCC

美微科

MBR2535CT

25.0 AMPS. Schottky Barrier Rectifiers Low power loss, high efficiency

文件:231.91 Kbytes Page:3 Pages

TSC

台湾半导体

MBR2535CT

Dual Common Cathode Schottky Rectifier

文件:208.81 Kbytes Page:4 Pages

TSC

台湾半导体

MBR2535CT

SCHOTTKY BARRIER RECTIFIER

文件:261.75 Kbytes Page:3 Pages

HORNBY

南通康比电子

MBR2535CT

Dual SchottkyBarrierRectifiers

文件:335.67 Kbytes Page:3 Pages

FS

MBR2535CT

封装/外壳:TO-220-3 包装:管件 描述:DIODE ARRAY SCHOTTKY 35V TO220AB 分立半导体产品 二极管 - 整流器 - 阵列

PAMDiodes Incorporated

龙鼎微龙鼎微电子(上海)有限公司

MBR2535CT

SCHOTTKY RECTIFIER

文件:184.62 Kbytes Page:6 Pages

SMCSangdest Microelectronic (Nanjing) Co., Ltd

烧结金属

MBR2535CT

25.0 AMPS. Schottky Barrier Rectifiers

文件:484.05 Kbytes Page:2 Pages

TSC

台湾半导体

MBR2535CT

30 Amp Schottky Barrier Rectifier 20 to 100 Volts

文件:115.68 Kbytes Page:3 Pages

MCC

美微科

MBR2535CT

20.0 AMPS. Schottky Barrier Rectifiers

文件:207.04 Kbytes Page:2 Pages

TSC

台湾半导体

MBR2535CT

Dual Common-Cathode Schottky Rectifier

文件:134.82 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技威世科技半导体

MBR2535CT

Schottky Rectifier, 2 x 15 A

文件:113.76 Kbytes Page:6 Pages

VishayVishay Siliconix

威世科技威世科技半导体

MBR2535CT

25.0 AMPS. Schottky Barrier Rectifiers

文件:361.42 Kbytes Page:2 Pages

TSC

台湾半导体

MBR2535CT

30A SCHOTTKY BARRIER RECTIFIER

文件:63.78 Kbytes Page:2 Pages

DIODES

美台半导体

Schottky Rectifier, 2 x 15 A

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-

VishayVishay Siliconix

威世科技威世科技半导体

Schottky Rectifier, 2 x 15 A

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-

VishayVishay Siliconix

威世科技威世科技半导体

Schottky Rectifier, 2 x 15 A

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-

VishayVishay Siliconix

威世科技威世科技半导体

SWITCHMODE Power Rectifiers

SWITCHMODE™ Power Rectifiers The MBR2535CT/45CT series uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guardring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Tempe

ONSEMI

安森美半导体

SWITCHMODE Power Rectifiers

SWITCHMODE™ Power Rectifiers The MBR2535CT/45CT series uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guardring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Tempe

ONSEMI

安森美半导体

Switch-mode Power Rectifiers

The MBR2535CTG/45CTG series uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features  Guardring for Stress Protection  Low Forward Voltage  175C Operating Junction Temperature  These are Pb−Free Devices* Me

ONSEMI

安森美半导体

Switch-mode Power Rectifiers

The MBR2535CTG/45CTG series uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features  Guardring for Stress Protection  Low Forward Voltage  175C Operating Junction Temperature  These are Pb−Free Devices* Me

ONSEMI

安森美半导体

MBR2535CTL SCHOTTKY RECTIFIER

Features 150C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Fr

SMCDIODE

桑德斯微电子

SWITCHMODE??Power Rectifier

. . . employing the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes,

Motorola

摩托罗拉

Switch-mode Power Rectifier

Features and Benefits  Low Forward Voltage  Low Power Loss/High Efficiency  High Surge Capacity  150C Operating Junction Temperature  25 A Total (12.5 A Per Diode Leg)  This Device is Pb−Free and is RoHS Compliant* Applications  Power Supply – Output Rectification  Power Manageme

ONSEMI

安森美半导体

Switch-mode Power Rectifier

Features and Benefits • Low Forward Voltage • Low Power Loss/High Efficiency • High Surge Capacity • 150°C Operating Junction Temperature • 25 A Total (12.5 A Per Diode Leg) • Pb−Free Packages are Available* Applications • Power Supply – Output Rectification • Power Management • Instrume

ONSEMI

安森美半导体

Switch-mode Power Rectifier

Features and Benefits  Low Forward Voltage  Low Power Loss/High Efficiency  High Surge Capacity  150C Operating Junction Temperature  25 A Total (12.5 A Per Diode Leg)  This Device is Pb−Free and is RoHS Compliant* Applications  Power Supply – Output Rectification  Power Manageme

ONSEMI

安森美半导体

SCHOTTKY RECTIFIER 30 Amp

Description/ Features This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheel

IRF

Schottky Rectifier, 2 x 15 A

DESCRIPTION This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diode

VishayVishay Siliconix

威世科技威世科技半导体

Schottky Rectifier, 2 x 15 A

文件:113.76 Kbytes Page:6 Pages

VishayVishay Siliconix

威世科技威世科技半导体

25.0 AMPS. Schottky Barrier Rectifiers

文件:361.42 Kbytes Page:2 Pages

TSC

台湾半导体

30A SCHOTTKY BARRIER RECTIFIER

文件:63.78 Kbytes Page:2 Pages

DIODES

美台半导体

25.0 AMPS. Schottky Barrier Rectifiers

文件:484.05 Kbytes Page:2 Pages

TSC

台湾半导体

Dual Common-Cathode Schottky Rectifier

文件:134.82 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技威世科技半导体

20.0 AMPS. Schottky Barrier Rectifiers

文件:207.04 Kbytes Page:2 Pages

TSC

台湾半导体

MBR2535CT产品属性

  • 类型

    描述

  • 型号

    MBR2535CT

  • 功能描述

    肖特基二极管与整流器 24 amp Rectifiers Schottky Barrier

  • RoHS

  • 制造商

    Skyworks Solutions, Inc.

  • 产品

    Schottky Diodes

  • 峰值反向电压

    2 V

  • 正向连续电流

    50 mA

  • 配置

    Crossover Quad

  • 正向电压下降

    370 mV

  • 最大功率耗散

    75 mW

  • 工作温度范围

    - 65 C to + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOT-143

  • 封装

    Reel

更新时间:2025-8-8 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES/ON
24+
NA/
42
优势代理渠道,原装正品,可全系列订货开增值税票
ON/安森美
25+
TO220AB
54648
百分百原装现货 实单必成 欢迎询价
ON/安森美
24+
TO220AB
990000
明嘉莱只做原装正品现货
ON/安森美
24+
N/A
10000
原装进口只做订货 寻找优势渠道合作
SMSC
24+
TO220
8540
只做原装正品现货或订货假一赔十!
IR
04+
TO-220
1628
IR
23+
TO-220
30000
全新原装现货,价格优势
FSC
25+23+
TO-220
28892
绝对原装正品全新进口深圳现货
ON
534
385
原装正品
23+
TO-220
20541
专注原装正品现货特价中量大可定

MBR2535CT数据表相关新闻