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MBR2535CT价格
参考价格:¥3.8493
型号:MBR2535CT 品牌:Fairchild 备注:这里有MBR2535CT多少钱,2025年最近7天走势,今日出价,今日竞价,MBR2535CT批发/采购报价,MBR2535CT行情走势销售排行榜,MBR2535CT报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
MBR2535CT | SWITCHMODE??Power Rectifiers SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse | Motorola 摩托罗拉 | ||
MBR2535CT | 30 Ampere Schottky Barrier Rectifiers Features • Low power loss, high efficiency. • High surge capacity. • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. • Metal silicon junction, majority carrier conduction. • High current capacity, low forward voltage drop. • | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
MBR2535CT | 30A SCHOTTKY BARRIER RECTIFIER Features • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity | DIODES 美台半导体 | ||
MBR2535CT | SCHOTTKY RECTIFIER Reverse Voltage - 35 to 60 Volts Forward Current - 30.0 Amperes FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Dual rectifier construction, positive center-tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, | GE GE Industrial Company | ||
MBR2535CT | 25 Amp Schottky Barrier Rectifier 20 to 100 Volts Features • Guard Ring For Transient Protection • High Current Capability, High Efficiency • Halogen Free Available Upon Request By Adding Suffix -HF • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix Designates Compliant. See Ordering Information) • Epoxy Meets UL 94 V-0 Flammability Rating | MCC 美微科 | ||
MBR2535CT | 30 AMP SCHOTTKY BARRIER RECTIFIER 30 AMP SCHOTTKY BARRIER RECTIFIER Schottky barrier rectifier Guard ring for reverse protection Low power loss, high efficiency High surge capacity VRRM 35 to 45 Volts | Microsemi 美高森美 | ||
MBR2535CT | 25.0 AMPS. Schottky Barrier Rectifiers FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition | TSC 台湾半导体 | ||
MBR2535CT | Wide Temperature Range and High Tjm Schottky Barrier Rectifiers FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applica | SIRECTIFIER 矽莱克电子 | ||
MBR2535CT | Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | VishayVishay Siliconix 威世科技威世科技半导体 | ||
MBR2535CT | 25Amp schottky barrier rectifier 20to100 volts Features • Meatl of Silicon Rectifier, Majority Conducton • Guard ring for transient protection • High surge capacity • High Current Capability, High Efficiency • Low Power Loss | CHENYI 商朗电子 | ||
MBR2535CT | SWITCHMODE Power Rectifiers SWITCHMODE™ Power Rectifiers The MBR2535CT/45CT series uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guardring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Tempe | ONSEMI 安森美半导体 | ||
MBR2535CT | Dual Schottky Barrier Rectifiers Reverse Voltage 35 to 60 Volts Forward Current 25.0 Amperes Features ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high effi | Good-Ark | ||
MBR2535CT | SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE: 30 - 100 V CURRENT: 30 A FEATURES Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection. High surge capacity. For use in low voltage, high freq | BILIN 银河微电 | ||
MBR2535CT | 25A Dual Schottky Rectifiers PRODUCT SUMMARY Voltage ratings available from 35 to 60 Volts FEATURES • Plastic packages have Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal-silicon junction, majority carrier conduction • Low power loss, hi | SSC Silicon Standard Corp. | ||
MBR2535CT | 25 Amp Schottky Barrier Rectifier 20 to 100 Volts Features ● Meatl of Silicon Rectifier, Majority Conducton ● Guard ring for transient protection ● High surge capacity ● High Current Capability, High Efficiency ● Low Power Loss | KERSEMI | ||
MBR2535CT | 25.0AMP. Schottky Barrier Rectifiers Features ♦ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low forward voltage drop ♦ High surge capability ♦ For use in low voltage, hig | LUGUANG 鲁光电子 | ||
MBR2535CT | Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high frequency | KERSEMI | ||
MBR2535CT | Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high frequency | KERSEMI | ||
MBR2535CT | SCHOTTKY BARRIER RECTIFIERS FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection. | DSK | ||
MBR2535CT | SWITCHMODE Power Rectifiers SWITCHMODE™ Power Rectifiers The MBR2535CT/45CT series uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guardring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Tempe | KERSEMI | ||
MBR2535CT | 25.0 AMPS. Schottky Barrier Rectifiers Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high frequency | KERSEMI | ||
MBR2535CT | MBR2535CT SCHOTTKY RECTIFIER Features 150C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Fr | SMCDIODE 桑德斯微电子 | ||
MBR2535CT | 封装/外壳:TO-220-3 包装:卷带(TR)剪切带(CT) 描述:DIODE ARRAY SCHOTTKY 35V TO220AB 分立半导体产品 二极管 - 整流器 - 阵列 | ONSEMI 安森美半导体 | ||
MBR2535CT | 30A SCHOTTKY RECTIFIERS 文件:435.56 Kbytes Page:2 Pages | DIGITRON | ||
MBR2535CT | Dual Common Cathode Schottky Rectifier 文件:161.98 Kbytes Page:6 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | ||
MBR2535CT | High Tjm Low IRRM Schottky Barrier Diodes 文件:92.43 Kbytes Page:2 Pages | SIRECTIFIER 矽莱克电子 | ||
MBR2535CT | 25 Amp Schottky Barrier Rectifier 20 to 100 Volts 文件:243.23 Kbytes Page:3 Pages | MCC 美微科 | ||
MBR2535CT | 25.0 AMPS. Schottky Barrier Rectifiers Low power loss, high efficiency 文件:231.91 Kbytes Page:3 Pages | TSC 台湾半导体 | ||
MBR2535CT | Dual Common Cathode Schottky Rectifier 文件:208.81 Kbytes Page:4 Pages | TSC 台湾半导体 | ||
MBR2535CT | SCHOTTKY BARRIER RECTIFIER 文件:261.75 Kbytes Page:3 Pages | HORNBY 南通康比电子 | ||
MBR2535CT | Dual SchottkyBarrierRectifiers 文件:335.67 Kbytes Page:3 Pages | FS | ||
MBR2535CT | 封装/外壳:TO-220-3 包装:管件 描述:DIODE ARRAY SCHOTTKY 35V TO220AB 分立半导体产品 二极管 - 整流器 - 阵列 | PAMDiodes Incorporated 龙鼎微龙鼎微电子(上海)有限公司 | ||
MBR2535CT | SCHOTTKY RECTIFIER 文件:184.62 Kbytes Page:6 Pages | SMCSangdest Microelectronic (Nanjing) Co., Ltd 烧结金属 | ||
MBR2535CT | 25.0 AMPS. Schottky Barrier Rectifiers 文件:484.05 Kbytes Page:2 Pages | TSC 台湾半导体 | ||
MBR2535CT | 30 Amp Schottky Barrier Rectifier 20 to 100 Volts 文件:115.68 Kbytes Page:3 Pages | MCC 美微科 | ||
MBR2535CT | 20.0 AMPS. Schottky Barrier Rectifiers 文件:207.04 Kbytes Page:2 Pages | TSC 台湾半导体 | ||
MBR2535CT | Dual Common-Cathode Schottky Rectifier 文件:134.82 Kbytes Page:5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | ||
MBR2535CT | Schottky Rectifier, 2 x 15 A 文件:113.76 Kbytes Page:6 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | ||
MBR2535CT | 25.0 AMPS. Schottky Barrier Rectifiers 文件:361.42 Kbytes Page:2 Pages | TSC 台湾半导体 | ||
MBR2535CT | 30A SCHOTTKY BARRIER RECTIFIER 文件:63.78 Kbytes Page:2 Pages | DIODES 美台半导体 | ||
Schottky Rectifier, 2 x 15 A FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Schottky Rectifier, 2 x 15 A FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Schottky Rectifier, 2 x 15 A FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SWITCHMODE Power Rectifiers SWITCHMODE™ Power Rectifiers The MBR2535CT/45CT series uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guardring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Tempe | ONSEMI 安森美半导体 | |||
SWITCHMODE Power Rectifiers SWITCHMODE™ Power Rectifiers The MBR2535CT/45CT series uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guardring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Tempe | ONSEMI 安森美半导体 | |||
Switch-mode Power Rectifiers The MBR2535CTG/45CTG series uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features Guardring for Stress Protection Low Forward Voltage 175C Operating Junction Temperature These are Pb−Free Devices* Me | ONSEMI 安森美半导体 | |||
Switch-mode Power Rectifiers The MBR2535CTG/45CTG series uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features Guardring for Stress Protection Low Forward Voltage 175C Operating Junction Temperature These are Pb−Free Devices* Me | ONSEMI 安森美半导体 | |||
MBR2535CTL SCHOTTKY RECTIFIER Features 150C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Fr | SMCDIODE 桑德斯微电子 | |||
SWITCHMODE??Power Rectifier . . . employing the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes, | Motorola 摩托罗拉 | |||
Switch-mode Power Rectifier Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 150C Operating Junction Temperature 25 A Total (12.5 A Per Diode Leg) This Device is Pb−Free and is RoHS Compliant* Applications Power Supply – Output Rectification Power Manageme | ONSEMI 安森美半导体 | |||
Switch-mode Power Rectifier Features and Benefits • Low Forward Voltage • Low Power Loss/High Efficiency • High Surge Capacity • 150°C Operating Junction Temperature • 25 A Total (12.5 A Per Diode Leg) • Pb−Free Packages are Available* Applications • Power Supply – Output Rectification • Power Management • Instrume | ONSEMI 安森美半导体 | |||
Switch-mode Power Rectifier Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 150C Operating Junction Temperature 25 A Total (12.5 A Per Diode Leg) This Device is Pb−Free and is RoHS Compliant* Applications Power Supply – Output Rectification Power Manageme | ONSEMI 安森美半导体 | |||
SCHOTTKY RECTIFIER 30 Amp Description/ Features This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheel | IRF | |||
Schottky Rectifier, 2 x 15 A DESCRIPTION This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diode | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Schottky Rectifier, 2 x 15 A 文件:113.76 Kbytes Page:6 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
25.0 AMPS. Schottky Barrier Rectifiers 文件:361.42 Kbytes Page:2 Pages | TSC 台湾半导体 | |||
30A SCHOTTKY BARRIER RECTIFIER 文件:63.78 Kbytes Page:2 Pages | DIODES 美台半导体 | |||
25.0 AMPS. Schottky Barrier Rectifiers 文件:484.05 Kbytes Page:2 Pages | TSC 台湾半导体 | |||
Dual Common-Cathode Schottky Rectifier 文件:134.82 Kbytes Page:5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
20.0 AMPS. Schottky Barrier Rectifiers 文件:207.04 Kbytes Page:2 Pages | TSC 台湾半导体 |
MBR2535CT产品属性
- 类型
描述
- 型号
MBR2535CT
- 功能描述
肖特基二极管与整流器 24 amp Rectifiers Schottky Barrier
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
DIODES/ON |
24+ |
NA/ |
42 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
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ON/安森美 |
25+ |
TO220AB |
54648 |
百分百原装现货 实单必成 欢迎询价 |
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ON/安森美 |
24+ |
TO220AB |
990000 |
明嘉莱只做原装正品现货 |
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ON/安森美 |
24+ |
N/A |
10000 |
原装进口只做订货 寻找优势渠道合作 |
|||
SMSC |
24+ |
TO220 |
8540 |
只做原装正品现货或订货假一赔十! |
|||
IR |
04+ |
TO-220 |
1628 |
||||
IR |
23+ |
TO-220 |
30000 |
全新原装现货,价格优势 |
|||
FSC |
25+23+ |
TO-220 |
28892 |
绝对原装正品全新进口深圳现货 |
|||
ON |
534 |
385 |
原装正品 |
||||
23+ |
TO-220 |
20541 |
专注原装正品现货特价中量大可定 |
MBR2535CT规格书下载地址
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