MBR2535CT价格

参考价格:¥3.8493

型号:MBR2535CT 品牌:Fairchild 备注:这里有MBR2535CT多少钱,2024年最近7天走势,今日出价,今日竞价,MBR2535CT批发/采购报价,MBR2535CT行情走势销售排行榜,MBR2535CT报价。
型号 功能描述 生产厂家&企业 LOGO 操作
MBR2535CT

SWITCHMODE??PowerRectifiers

SWITCHMODE™PowerRectifiers ...usingtheSchottkyBarrierprinciplewithaplatinumbarriermetal.Thesestate–of–the–artdeviceshavethefollowingfeatures: •GuardringforStressProtection •LowForwardVoltage •150°COperatingJunctionTemperature •GuaranteedReverse

MotorolaMotorola, Inc

摩托罗拉

Motorola
MBR2535CT

30AmpereSchottkyBarrierRectifiers

Features •Lowpowerloss,highefficiency. •Highsurgecapacity. •Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications. •Metalsiliconjunction,majoritycarrierconduction. •Highcurrentcapacity,lowforwardvoltagedrop. •

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
MBR2535CT

30ASCHOTTKYBARRIERRECTIFIER

Features •SchottkyBarrierChip •GuardRingDieConstructionforTransientProtection •LowPowerLoss,HighEfficiency •HighSurgeCapability •HighCurrentCapabilityandLowForwardVoltageDrop •ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling,andPolarity

DIODESDiodes Incorporated

达尔科技

DIODES
MBR2535CT

SCHOTTKYRECTIFIER

ReverseVoltage-35to60VoltsForwardCurrent-30.0Amperes FEATURES ♦PlasticpackagehasUnderwritersLaboratory FlammabilityClassifications94V-0 ♦Dualrectifierconstruction,positivecenter-tap ♦Metalsiliconjunction,majoritycarrierconduction ♦Lowpowerloss,

GE

GE Industrial Company

GE
MBR2535CT

25AmpSchottkyBarrierRectifier20to100Volts

Features •GuardRingForTransientProtection •HighCurrentCapability,HighEfficiency •HalogenFreeAvailableUponRequestByAddingSuffix-HF •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixDesignatesCompliant.SeeOrderingInformation) •EpoxyMeetsUL94V-0FlammabilityRating

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
MBR2535CT

30AMPSCHOTTKYBARRIERRECTIFIER

30AMPSCHOTTKYBARRIERRECTIFIER Schottkybarrierrectifier Guardringforreverseprotection Lowpowerloss,highefficiency Highsurgecapacity VRRM35to45Volts

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
MBR2535CT

25.0AMPS.SchottkyBarrierRectifiers

FEATURES -Lowpowerloss,highefficiency -Guardringforovervoltageprotection -Highsurgecurrentcapability -ComplianttoRoHSDirective2011/65/EUandinaccordancetoWEEE2002/96/EC -Halogen-freeaccordingtoIEC61249-2-21definition

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC
MBR2535CT

WideTemperatureRangeandHighTjmSchottkyBarrierRectifiers

FEATURES *Metalofsiliconrectifier,majoritycarrierconducton *Guardringfortransientprotection *Lowpowerloss,highefficiency *Highcurrentcapability,lowVF *Highsurgecapacity *Foruseinlowvoltage,highfrequencyinverters,freewhelling,andpolarityprotectionapplica

SIRECTIFIERSirectifier Semiconductors

矽莱克电子江苏矽莱克电子科技有限公司

SIRECTIFIER
MBR2535CT

DualCommon-CathodeSchottkyRectifier

FEATURES •Guardringforovervoltageprotection •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip260°C,40s(forTO-

VishayVishay Siliconix

威世科技

Vishay
MBR2535CT

25Ampschottkybarrierrectifier20to100volts

Features •MeatlofSiliconRectifier,MajorityConducton •Guardringfortransientprotection •Highsurgecapacity •HighCurrentCapability,HighEfficiency •LowPowerLoss

CHENYIShanghai Lunsure Electronic Tech

商朗电子上海商朗电子科技有限公司

CHENYI
MBR2535CT

SWITCHMODEPowerRectifiers

SWITCHMODE™PowerRectifiers TheMBR2535CT/45CTseriesusestheSchottkyBarrierprinciplewithaplatinumbarriermetal.Thesestate−of−the−artdeviceshavethefollowingfeatures: Features •GuardringforStressProtection •LowForwardVoltage •175°COperatingJunctionTempe

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MBR2535CT

DualSchottkyBarrierRectifiers

ReverseVoltage35to60VoltsForwardCurrent25.0Amperes Features ♦PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ♦Dualrectifierconstruction,positivecentertap ♦Metalsiliconjunction,majoritycarrierconduction ♦Lowpowerloss,higheffi

Good-Ark

Good-Ark

Good-Ark
MBR2535CT

SCHOTTKYBARRIERRECTIFIER

SCHOTTKYBARRIERRECTIFIER VOLTAGERANGE:30-100V CURRENT:30A FEATURES Metalsiliconjunction,majoritycarrierconduction. Highcurrentcapacity,lowforwardvoltagedrop. Guardringforovervoltageprotection. Highsurgecapacity. Foruseinlowvoltage,highfreq

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
MBR2535CT

25ADualSchottkyRectifiers

PRODUCTSUMMARY Voltageratingsavailablefrom35to60Volts FEATURES •PlasticpackageshaveUnderwritersLaboratoryFlammabilityClassification94V-0 •Dualrectifierconstruction,positivecentertap •Metal-siliconjunction,majoritycarrierconduction •Lowpowerloss,hi

SSC

Silicon Standard Corp.

SSC
MBR2535CT

25AmpSchottkyBarrierRectifier20to100Volts

Features ●MeatlofSiliconRectifier,MajorityConducton ●Guardringfortransientprotection ●Highsurgecapacity ●HighCurrentCapability,HighEfficiency ●LowPowerLoss

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
MBR2535CT

25.0AMP.SchottkyBarrierRectifiers

Features ♦PlasticmaterialusedcarriesUnderwritersLaboratoryClassifications94V-0 ♦Metalsiliconjunction,majoritycarrierconduction ♦Lowpowerloss,highefficiency ♦Highcurrentcapability,lowforwardvoltagedrop ♦Highsurgecapability ♦Foruseinlowvoltage,hig

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
MBR2535CT

PlasticpackagehasUnderwritersLaboratoryFlammabilityClassifications94V-0

Features ◇PlasticmaterialusedcarriesUnderwritersLaboratoryClassifications94V-0 ◇Metalsiliconjunction,majoritycarrierconduction ◇Lowpowerloss,highefficiency ◇Highcurrentcapability,lowforwardvoltagedrop ◇Highsurgecapability ◇Foruseinlowvoltage,highfrequency

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
MBR2535CT

PlasticpackagehasUnderwritersLaboratoryFlammabilityClassifications94V-0

Features ◇PlasticmaterialusedcarriesUnderwritersLaboratoryClassifications94V-0 ◇Metalsiliconjunction,majoritycarrierconduction ◇Lowpowerloss,highefficiency ◇Highcurrentcapability,lowforwardvoltagedrop ◇Highsurgecapability ◇Foruseinlowvoltage,highfrequency

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
MBR2535CT

SCHOTTKYBARRIERRECTIFIERS

FEATURES ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Guardringforovervoltageprotection.

DSK

Diode Semiconductor Korea

DSK
MBR2535CT

SWITCHMODEPowerRectifiers

SWITCHMODE™PowerRectifiers TheMBR2535CT/45CTseriesusestheSchottkyBarrierprinciplewithaplatinumbarriermetal.Thesestate−of−the−artdeviceshavethefollowingfeatures: Features •GuardringforStressProtection •LowForwardVoltage •175°COperatingJunctionTempe

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
MBR2535CT

25.0AMPS.SchottkyBarrierRectifiers

Features ◇PlasticmaterialusedcarriesUnderwritersLaboratoryClassifications94V-0 ◇Metalsiliconjunction,majoritycarrierconduction ◇Lowpowerloss,highefficiency ◇Highcurrentcapability,lowforwardvoltagedrop ◇Highsurgecapability ◇Foruseinlowvoltage,highfrequency

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
MBR2535CT

MBR2535CTSCHOTTKYRECTIFIER

Features 150CTJoperation Centertapconfiguration Lowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhanced mechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongterm reliability ThisisaPb−Fr

SMCDIODESMC Diode Solutions

桑德斯微电子器件(南京)有限公司

SMCDIODE
MBR2535CT

SCHOTTKYBARRIERRECTIFIER

文件:261.75 Kbytes Page:3 Pages

HORNBYNantong Hornby Electronic Co.,Ltd

南通康比电子南通康比电子有限公司

HORNBY
MBR2535CT

DualSchottkyBarrierRectifiers

文件:335.67 Kbytes Page:3 Pages

FS

First Silicon Co., Ltd

FS
MBR2535CT

封装/外壳:TO-220-3 包装:管件 描述:DIODE ARRAY SCHOTTKY 35V TO220AB 分立半导体产品 二极管 - 整流器 - 阵列

PAMDiodes Incorporated

龙鼎威

PAM
MBR2535CT

封装/外壳:TO-220-3 包装:卷带(TR)剪切带(CT) 描述:DIODE ARRAY SCHOTTKY 35V TO220AB 分立半导体产品 二极管 - 整流器 - 阵列

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MBR2535CT

30ASCHOTTKYRECTIFIERS

文件:435.56 Kbytes Page:2 Pages

DIGITRON

Digitron Semiconductors

DIGITRON
MBR2535CT

DualCommonCathodeSchottkyRectifier

文件:161.98 Kbytes Page:6 Pages

VishayVishay Siliconix

威世科技

Vishay
MBR2535CT

HighTjmLowIRRMSchottkyBarrierDiodes

文件:92.43 Kbytes Page:2 Pages

SIRECTIFIERSirectifier Semiconductors

矽莱克电子江苏矽莱克电子科技有限公司

SIRECTIFIER
MBR2535CT

25AmpSchottkyBarrierRectifier20to100Volts

文件:243.23 Kbytes Page:3 Pages

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
MBR2535CT

25.0AMPS.SchottkyBarrierRectifiersLowpowerloss,highefficiency

文件:231.91 Kbytes Page:3 Pages

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC
MBR2535CT

DualCommonCathodeSchottkyRectifier

文件:208.81 Kbytes Page:4 Pages

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC
MBR2535CT

SCHOTTKYRECTIFIER

文件:184.62 Kbytes Page:6 Pages

SMCSintered Metal Company

烧结金属烧结金属公司

SMC
MBR2535CT

25.0AMPS.SchottkyBarrierRectifiers

文件:484.05 Kbytes Page:2 Pages

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC
MBR2535CT

DualCommon-CathodeSchottkyRectifier

文件:134.82 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技

Vishay
MBR2535CT

30AmpSchottkyBarrierRectifier20to100Volts

文件:115.68 Kbytes Page:3 Pages

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
MBR2535CT

20.0AMPS.SchottkyBarrierRectifiers

文件:207.04 Kbytes Page:2 Pages

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC
MBR2535CT

SchottkyRectifier,2x15A

文件:113.76 Kbytes Page:6 Pages

VishayVishay Siliconix

威世科技

Vishay
MBR2535CT

25.0AMPS.SchottkyBarrierRectifiers

文件:361.42 Kbytes Page:2 Pages

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC
MBR2535CT

30ASCHOTTKYBARRIERRECTIFIER

文件:63.78 Kbytes Page:2 Pages

DIODESDiodes Incorporated

达尔科技

DIODES

SchottkyRectifier,2x15A

FEATURES •Guardringforovervoltageprotection •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip260°C,40s(forTO-

VishayVishay Siliconix

威世科技

Vishay

SchottkyRectifier,2x15A

FEATURES •Guardringforovervoltageprotection •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip260°C,40s(forTO-

VishayVishay Siliconix

威世科技

Vishay

SchottkyRectifier,2x15A

FEATURES •Guardringforovervoltageprotection •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip260°C,40s(forTO-

VishayVishay Siliconix

威世科技

Vishay

SWITCHMODEPowerRectifiers

SWITCHMODE™PowerRectifiers TheMBR2535CT/45CTseriesusestheSchottkyBarrierprinciplewithaplatinumbarriermetal.Thesestate−of−the−artdeviceshavethefollowingfeatures: Features •GuardringforStressProtection •LowForwardVoltage •175°COperatingJunctionTempe

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SWITCHMODEPowerRectifiers

SWITCHMODE™PowerRectifiers TheMBR2535CT/45CTseriesusestheSchottkyBarrierprinciplewithaplatinumbarriermetal.Thesestate−of−the−artdeviceshavethefollowingfeatures: Features •GuardringforStressProtection •LowForwardVoltage •175°COperatingJunctionTempe

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SWITCHMODE??PowerRectifier

...employingtheSchottkyBarrierprincipleinalargemetal–to–siliconpowerdiode.State–of–the–artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforuseinlowvoltage,highfrequencyswitchingpowersupplies,freewheelingdiodes,

MotorolaMotorola, Inc

摩托罗拉

Motorola

MBR2535CTLSCHOTTKYRECTIFIER

Features 150CTJoperation Centertapconfiguration Lowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhanced mechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongterm reliability ThisisaPb−Fr

SMCDIODESMC Diode Solutions

桑德斯微电子器件(南京)有限公司

SMCDIODE

Switch-modePowerRectifier

FeaturesandBenefits •LowForwardVoltage •LowPowerLoss/HighEfficiency •HighSurgeCapacity •150°COperatingJunctionTemperature •25ATotal(12.5APerDiodeLeg) •Pb−FreePackagesareAvailable* Applications •PowerSupply–OutputRectification •PowerManagement •Instrume

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SCHOTTKYRECTIFIER30Amp

Description/Features ThiscentertapSchottkyrectifierhasbeenoptimizedforlowreverseleakageathightemperature.Theproprietarybarriertechnologyallowsforreliableoperationupto150°Cjunctiontemperature.Typicalapplicationsareinswitchingpowersupplies,converters,free-wheel

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

SchottkyRectifier,2x15A

DESCRIPTION ThiscentertapSchottkyrectifierhasbeenoptimizedforlowreverseleakageathightemperature.Theproprietarybarriertechnologyallowsforreliableoperationupto150°Cjunctiontemperature.Typicalapplicationsareinswitchingpowersupplies,converters,freewheelingdiode

VishayVishay Siliconix

威世科技

Vishay

SchottkyRectifier,2x15A

文件:113.76 Kbytes Page:6 Pages

VishayVishay Siliconix

威世科技

Vishay

25.0AMPS.SchottkyBarrierRectifiers

文件:361.42 Kbytes Page:2 Pages

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC

30ASCHOTTKYBARRIERRECTIFIER

文件:63.78 Kbytes Page:2 Pages

DIODESDiodes Incorporated

达尔科技

DIODES

25.0AMPS.SchottkyBarrierRectifiers

文件:484.05 Kbytes Page:2 Pages

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC

DualCommon-CathodeSchottkyRectifier

文件:134.82 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技

Vishay

20.0AMPS.SchottkyBarrierRectifiers

文件:207.04 Kbytes Page:2 Pages

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC

25AmpereSchottkyBarrierRectifiers

文件:132.4 Kbytes Page:3 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

25.0AMPS.SchottkyBarrierRectifiersLowpowerloss,highefficiency

文件:231.91 Kbytes Page:3 Pages

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC

DualCommonCathodeSchottkyRectifier

文件:208.81 Kbytes Page:4 Pages

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC

30ASCHOTTKYBARRIERRECTIFIER

文件:69.84 Kbytes Page:2 Pages

DIODESDiodes Incorporated

达尔科技

DIODES

MBR2535CT产品属性

  • 类型

    描述

  • 型号

    MBR2535CT

  • 功能描述

    肖特基二极管与整流器 24 amp Rectifiers Schottky Barrier

  • RoHS

  • 制造商

    Skyworks Solutions, Inc.

  • 产品

    Schottky Diodes

  • 峰值反向电压

    2 V

  • 正向连续电流

    50 mA

  • 配置

    Crossover Quad

  • 正向电压下降

    370 mV

  • 最大功率耗散

    75 mW

  • 工作温度范围

    - 65 C to + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOT-143

  • 封装

    Reel

更新时间:2024-4-25 22:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SUPERTEX
23+
SOP
12000
全新原装假一赔十
IR
2020+
TO-220
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
ON
21+
NA
99999
原装正品价格优惠
ON/安森美
2021/2022+
NA
8000
原厂原装现货订货价格优势终端BOM表可配单提供样品
VISHAY/威世
23+
TO220AB
6000
原装正品,支持实单
ON/安森美
21+
TO-220(TO-220-3)
8800
公司只做原装正品
ON
24+
TO-220-3
25000
ON全系列可订货
IR
24+
TO262
58000
全新原厂原装正品现货,可提供技术支持、样品免费!
SMC Diode Solutions
21+
TO220AB
13880
公司只售原装,支持实单
ON
23+
TO-220
3000
全新原装、诚信经营、公司现货销售!

MBR2535CT芯片相关品牌

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