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MBRB1045价格
参考价格：￥3.0707
型号：MBRB1045-E3/45 品牌：Vishay 备注：这里有MBRB1045多少钱，2025年最近7天走势，今日出价，今日竞价，MBRB1045批发/采购报价，MBRB1045行情走势销售排行榜，MBRB1045报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MBRB1045 | SWITCHMODE Schottky Power Rectifier Surface Mount Power Package SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suite | ONSEMI 安森美半导体 |   | |
MBRB1045 | Schottky Rectifier, 10 A FEATURES • Power pack • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 | VishayVishay Siliconix 威世威世科技公司 | | |
MBRB1045 | SCHOTTKY RECTIFIER FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low forward voltage drop ♦ High surge capability ♦ For use in low voltage, high frequen | GE | | |
MBRB1045 | SCHOTTKY RECTIFIER Description/ Features This Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheeling diodes, | IRF | | |
MBRB1045 | SCHOTTKY RECTIFIER Features: • 175 °C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • This | SMC 桑德斯微电子 | | |
MBRB1045 | Schottky Barrier Rectifier 文件：282.11 Kbytes Page：2 Pages | ISC 无锡固电 | | |
MBRB1045 | 封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：DIODE SCHOTTKY 45V 10A D2PAK 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | |
MBRB1045 | Schottky Barrier Rectifier | VishayVishay Siliconix 威世威世科技公司 | | |
MBRB1045 | Diode Schottky 45V 10A 3-Pin(2+Tab) D2PAK Rail | ETC 知名厂家 | ETC | |
MBRB1045 | 肖特基二极管 | SMC 桑德斯微电子 | | |
MBRB1045 | 封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：散装 描述：DIODE SCHOTTKY 45V 10A D2PAK 分立半导体产品 二极管 - 整流器 - 单 | ONSEMI 安森美半导体 | | |
MBRB1045 | Schottky Barrier Rectifiers 文件：255.85 Kbytes Page：3 Pages | Good-Ark 固锝电子 | | |
MBRB1045 | SWITCHMODE Schottky Power Rectifier 文件：112.95 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | |
10 Amp Schottky Barrier Rectifier 30 to 45 Volts Features • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Meatl of Silicon Rectifier, Majority Conducton • Halogen free available upon request by adding suffix | MCC | | ||
SCHOTTKY RECTIFIER Features: • 150°C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • T | SMC 桑德斯微电子 | | ||
Dual Schottky Barrier Rectifier Reverse Voltage 45Volts , Forward Current 10A Reverse Voltage 45Volts , Forward Current 10A Features ◆ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ◆ Dual rectifier construction, positive center tap ◆ Metal silicon junction, majority carrier conduction ◆ Low power loss, high efficiency ◆ Guardring fo | FS | | ||
2SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE: 30 - 100 V CURRENT: 10 A FEATURES Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection. High surge capacity. For use in low voltage, high frequency inverters, free wheeling | BILIN 银河微电 | | ||
Schottky Barrier Rectifier FEATURES • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AC and ITO-220AC package) • Component in | VishayVishay Siliconix 威世威世科技公司 | | ||
Schottky Barrier Rectifier FEATURES • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AC and ITO-220AC package) • Component in | VishayVishay Siliconix 威世威世科技公司 | | ||
Schottky Barrier Rectifier FEATURES • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AC and ITO-220AC package) • Component in | VishayVishay Siliconix 威世威世科技公司 | | ||
Schottky Barrier Rectifier FEATURES • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AC and ITO-220AC package) • Component in | VishayVishay Siliconix 威世威世科技公司 | | ||
Schottky Power Rectifier, Switch-Mode, 10 A, 45 V This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supp | ONSEMI 安森美半导体 | | ||
Switch-mode Schottky Power Rectifier SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suite | ONSEMI 安森美半导体 | | ||
SWITCHMODE Schottky Power Rectifier Switch-mode Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally sui | ONSEMI 安森美半导体 | | ||
SWITCHMODE Schottky Power Rectifier Surface Mount Power Package SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suite | ONSEMI 安森美半导体 | | ||
Schottky Power Rectifier, Switch-Mode, 10 A, 45 V This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supp | ONSEMI 安森美半导体 | | ||
Schottky Barrier Rectifier FEATURES • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AC and ITO-220AC package) • Component in | VishayVishay Siliconix 威世威世科技公司 | | ||
Schottky Barrier Rectifier FEATURES • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AC and ITO-220AC package) • Component in | VishayVishay Siliconix 威世威世科技公司 | | ||
Schottky Barrier Rectifier FEATURES • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AC and ITO-220AC package) • Component in | VishayVishay Siliconix 威世威世科技公司 | | ||
Schottky Barrier Rectifier FEATURES • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AC and ITO-220AC package) • Component in | VishayVishay Siliconix 威世威世科技公司 | | ||
Schottky Rectifier, 10 A DESCRIPTION This Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and revers | VishayVishay Siliconix 威世威世科技公司 | | ||
SCHOTTKY RECTIFIER Description/ Features This Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheeling diodes, | IRF | | ||
SWITCHMODE Schottky Power Rectifier Surface Mount Power Package SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suite | ONSEMI 安森美半导体 | | ||
SWITCHMODE Schottky Power Rectifier Surface Mount Power Package SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suite | ONSEMI 安森美半导体 | | ||
Schottky Power Rectifier, Switch-Mode, 10 A, 45 V This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supp | ONSEMI 安森美半导体 | | ||
SWITCHMODE Schottky Power Rectifier Switch-mode Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally sui | ONSEMI 安森美半导体 | | ||
Switch-mode Schottky Power Rectifier SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suite | ONSEMI 安森美半导体 | | ||
Schottky Rectifier, 10 A FEATURES • Power pack • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 | VishayVishay Siliconix 威世威世科技公司 | | ||
SCHOTTKY RECTIFIER Description/ Features This Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheeling diodes, | IRF | | ||
SCHOTTKY RECTIFIER Description/ Features This Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheeling diodes, | IRF | | ||
Schottky Rectifier, 10 A DESCRIPTION This Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and revers | VishayVishay Siliconix 威世威世科技公司 | | ||
Schottky Rectifier, 10 A FEATURES • Power pack • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 | VishayVishay Siliconix 威世威世科技公司 | | ||
SCHOTTKY RECTIFIER Description/ Features This Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheeling diodes, | IRF | | ||
SCHOTTKY RECTIFIER Description/ Features This Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheeling diodes, | IRF | | ||
Schottky Rectifier, 10 A DESCRIPTION This Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and revers | VishayVishay Siliconix 威世威世科技公司 | | ||
SWITCHMODE Schottky Power Rectifier 文件：112.95 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Product Specification 文件：549.65 Kbytes Page：7 Pages | Good-Ark 固锝电子 | | ||
10 Amp Schottky Barrier Rectifier 30 to 60 Volts 文件：247.76 Kbytes Page：3 Pages | MCC | | ||
10 Amp Schottky Barrier Rectifier 30 to 60 Volts 文件：209.53 Kbytes Page：3 Pages | MCC | | ||
Schottky Barrier Rectifier 文件：380.79 Kbytes Page：5 Pages | Surge | | ||
10A Surface Mount High Power Schottky Barrier Rectifiers 文件：102.64 Kbytes Page：3 Pages | CITC 竹懋科技 | | ||
SWITCHMODE Schottky Power Rectifier 文件：112.95 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Schottky Rectifier, 10 A 文件：102.86 Kbytes Page：6 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
SWITCHMODE Schottky Power Rectifier 文件：112.95 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
SWITCHMODE Schottky Power Rectifier 文件：112.95 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
T-1 Lamps, Visible-Infrared T-1 Lamps, Visible-Infrared | GILWAY | | ||
Inst, 24 Pr #16 Str BC, PVC-NYL Ins E1, IS/OS, Blk PVC Jkt, 600V TC-ER 150V NPLF 90C Dry/Wet Product Description UL Instrumentation, 24 Pair 16AWG (7x24) Bare Copper, PVC-NYL Insulation E1 Color Code, Individual & Overall Beldfoil® Shield, Black PVC Outer Jacket, 600V TC-ER 150V NPLF 90C Dry/Wet SUN RES DIR BUR | BELDEN 百通 | | ||
Neon Indicatiors (Neon, LED and Filament Lamps) 文件：85.11 Kbytes Page：2 Pages | BULGIN | | ||
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MBRB1045产品属性
- 类型
描述
- 型号
MBRB1045
- 功能描述
肖特基二极管与整流器 10A 45V
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
24+ |
NA/ |
469 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ON/安森美 |
24+ |
TO263 |
3024 |
原装正品,现货库存,1小时内发货 |
|||
ONSEMI |
24+ |
N/A |
10000 |
只做原装,实单最低价支持 |
|||
ON/安森美 |
24+ |
TO220 |
50000 |
全新原装现货特价销售,欢迎来电查询 |
|||
扬杰 |
22+ |
TO-263 |
20000 |
公司只做原装 品质保障 |
|||
ON |
21+ |
TO-263 |
7200 |
十年信誉,只做原装,有挂就有现货! |
|||
ON/IR |
NEW |
TO-263 |
6893 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
IR |
25+ |
239 |
公司优势库存 热卖中! |
||||
ON/安森美 |
25+ |
TO-263 |
32360 |
ON/安森美全新特价MBRB1045T4G即刻询购立享优惠#长期有货 |
|||
ON(安森美) |
26+ |
NA |
60000 |
只有原装 可配单 |
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肖特基二极管与整流器 10A 45V
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2013-2-17
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