MBRB1045价格
参考价格：￥3.0707
型号：MBRB1045-E3/45 品牌：Vishay 备注：这里有MBRB1045多少钱，2026年最近7天走势，今日出价，今日竞价，MBRB1045批发/采购报价，MBRB1045行情走势销售排行榜，MBRB1045报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MBRB1045 | SWITCHMODE Schottky Power Rectifier Surface Mount Power Package SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suite | ONSEMI 安森美半导体 |   | |
MBRB1045 | Schottky Rectifier, 10 A FEATURES • Power pack • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 | VISHAYVishay Siliconix 威世威世科技公司 | | |
MBRB1045 | SCHOTTKY RECTIFIER FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low forward voltage drop ♦ High surge capability ♦ For use in low voltage, high frequen | GE | | |
MBRB1045 | SCHOTTKY RECTIFIER Description/ Features This Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheeling diodes, | IRF | | |
MBRB1045 | SCHOTTKY RECTIFIER Features: • 175 °C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • This | SMC 桑德斯微电子 | | |
MBRB1045 | Schottky Barrier Rectifier 文件：282.11 Kbytes Page：2 Pages | ISC 无锡固电 | | |
MBRB1045 | Schottky Barrier Rectifiers 文件：255.85 Kbytes Page：3 Pages | GOOD-ARK 固锝电子 | | |
MBRB1045 | 封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：散装 描述：DIODE SCHOTTKY 45V 10A D2PAK 分立半导体产品 二极管 - 整流器 - 单 | ONSEMI 安森美半导体 | | |
MBRB1045 | 封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：DIODE SCHOTTKY 45V 10A D2PAK 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | |
MBRB1045 | 肖特基整流管 | GOOD-ARK 固锝电子 | | |
MBRB1045 | 肖特基二极管 | CHENDA 辰达半导体 | | |
MBRB1045 | 10A,45V,Surface Mount Schottky Barrier Rectifiers | GALAXY 银河微电 | | |
MBRB1045 | SWITCHMODE Schottky Power Rectifier 文件：112.95 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | |
丝印代码：MBRB1045CT；10A Surface Mount High Power Schottky Barrier Rectifiers 文件：102.64 Kbytes Page：3 Pages | CITC 竹懋科技 | | ||
Dual Schottky Barrier Rectifier Reverse Voltage 45Volts , Forward Current 10A Reverse Voltage 45Volts , Forward Current 10A Features ◆ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ◆ Dual rectifier construction, positive center tap ◆ Metal silicon junction, majority carrier conduction ◆ Low power loss, high efficiency ◆ Guardring fo | FS | | ||
SCHOTTKY RECTIFIER Features: • 150°C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • T | SMC 桑德斯微电子 | | ||
10 Amp Schottky Barrier Rectifier 30 to 45 Volts Features • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Meatl of Silicon Rectifier, Majority Conducton • Halogen free available upon request by adding suffix | MCC | | ||
2SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE: 30 - 100 V CURRENT: 10 A FEATURES Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection. High surge capacity. For use in low voltage, high frequency inverters, free wheeling | BILIN 银河微电 | | ||
Schottky Barrier Rectifier FEATURES • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AC and ITO-220AC package) • Component in | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Schottky Barrier Rectifier FEATURES • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AC and ITO-220AC package) • Component in | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Schottky Barrier Rectifier FEATURES • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AC and ITO-220AC package) • Component in | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Schottky Barrier Rectifier FEATURES • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AC and ITO-220AC package) • Component in | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Switch-mode Schottky Power Rectifier SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suite | ONSEMI 安森美半导体 | | ||
SWITCHMODE Schottky Power Rectifier Switch-mode Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally sui | ONSEMI 安森美半导体 | | ||
Schottky Power Rectifier, Switch-Mode, 10 A, 45 V This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supp | ONSEMI 安森美半导体 | | ||
SWITCHMODE Schottky Power Rectifier Surface Mount Power Package SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suite | ONSEMI 安森美半导体 | | ||
Schottky Power Rectifier, Switch-Mode, 10 A, 45 V This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supp | ONSEMI 安森美半导体 | | ||
Schottky Barrier Rectifier FEATURES • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AC and ITO-220AC package) • Component in | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Schottky Barrier Rectifier FEATURES • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AC and ITO-220AC package) • Component in | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Schottky Barrier Rectifier FEATURES • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AC and ITO-220AC package) • Component in | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Schottky Barrier Rectifier FEATURES • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AC and ITO-220AC package) • Component in | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Schottky Rectifier, 10 A DESCRIPTION This Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and revers | VISHAYVishay Siliconix 威世威世科技公司 | | ||
SCHOTTKY RECTIFIER Description/ Features This Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheeling diodes, | IRF | | ||
SWITCHMODE Schottky Power Rectifier Surface Mount Power Package SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suite | ONSEMI 安森美半导体 | | ||
SWITCHMODE Schottky Power Rectifier Surface Mount Power Package SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suite | ONSEMI 安森美半导体 | | ||
Schottky Power Rectifier, Switch-Mode, 10 A, 45 V This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supp | ONSEMI 安森美半导体 | | ||
SWITCHMODE Schottky Power Rectifier Switch-mode Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally sui | ONSEMI 安森美半导体 | | ||
Switch-mode Schottky Power Rectifier SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suite | ONSEMI 安森美半导体 | | ||
Schottky Rectifier, 10 A FEATURES • Power pack • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 | VISHAYVishay Siliconix 威世威世科技公司 | | ||
SCHOTTKY RECTIFIER Description/ Features This Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheeling diodes, | IRF | | ||
SCHOTTKY RECTIFIER Description/ Features This Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheeling diodes, | IRF | | ||
Schottky Rectifier, 10 A DESCRIPTION This Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and revers | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Schottky Rectifier, 10 A FEATURES • Power pack • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 | VISHAYVishay Siliconix 威世威世科技公司 | | ||
SCHOTTKY RECTIFIER Description/ Features This Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheeling diodes, | IRF | | ||
SCHOTTKY RECTIFIER Description/ Features This Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheeling diodes, | IRF | | ||
Schottky Rectifier, 10 A DESCRIPTION This Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and revers | VISHAYVishay Siliconix 威世威世科技公司 | | ||
SWITCHMODE Schottky Power Rectifier 文件：112.95 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Schottky Barrier Rectifier 文件：380.79 Kbytes Page：5 Pages | SURGE | | ||
Product Specification 文件：549.65 Kbytes Page：7 Pages | GOOD-ARK 固锝电子 | | ||
10 Amp Schottky Barrier Rectifier 30 to 60 Volts 文件：247.76 Kbytes Page：3 Pages | MCC | | ||
10 Amp Schottky Barrier Rectifier 30 to 60 Volts 文件：209.53 Kbytes Page：3 Pages | MCC | | ||
SWITCHMODE Schottky Power Rectifier 文件：112.95 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Schottky Rectifier, 10 A 文件：102.86 Kbytes Page：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
SWITCHMODE Schottky Power Rectifier 文件：112.95 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
SWITCHMODE Schottky Power Rectifier 文件：112.95 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 20 to 45 VOLTS Switchmode Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse Avalanche • Ep | MOTOROLA 摩托罗拉 | | ||
SWITCHMODE??Schottky Power Rectifirers SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers | MOTOROLA 摩托罗拉 | | ||
Rectifier diodes Schottky barrier GENERAL DESCRIPTION Schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR1045F series is supplied in the SOD100 package. The PBYR1045X series is s | PHILIPS 飞利浦 | | ||
Rectifier diodes Schottky barrier GENERAL DESCRIPTION Schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR1045F series is supplied in the SOD100 package. The PBYR1045X series is s | PHILIPS 飞利浦 | | ||
SCHOTTKY BARRIER RECTIFIERS(10A,30-45V) SWITCHMODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features: * Low Forward Voltage * Low Switching noise * High Surge Capacity * Guara | MOSPEC 统懋 | |
MBRB1045产品属性
- 类型
描述
- Pb-free：
Pb
- AEC Qualified：
A
- Halide free：
H
- PPAP Capablee：
P
- Status：
Active
- Configuration：
Single
- VRRM Min (V)：
45
- VF Max (V)：
0.84
- IRM Max (µA)：
100
- IO(rec) Max (A)：
10
- IFSM Max (A)：
70/150
- Package Type：
D2PAK-3/TO-263-2/DPAK-3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
23+ |
11108 |
公司只做原装正品,假一赔十 |
||||
ON(安森美) |
2511 |
TO-263-2 |
5425 |
电子元器件采购降本 30%!公司原厂直采,砍掉中间差价 |
|||
ON |
2025+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
ON/安森美 |
2025+ |
TO-263 |
800 |
原装进口价格优 请找坤融电子! |
|||
ON Semiconductor Corporation |
25+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
|||
ON(安森美) |
25+ |
TO-263-2 |
21000 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
ON/安森美 |
25+ |
TO220 |
50000 |
全新原装现货特价销售,欢迎来电查询 |
|||
扬杰 |
25+ |
TO-263 |
10000 |
扬杰原厂一级代理商,价格优势! |
|||
ON/安森美 |
17+ |
TO-263 |
31518 |
原装正品 可含税交易 |
|||
ON/安森美 |
24+ |
TO263 |
3024 |
原装正品,现货库存,1小时内发货 |
MBRB1045规格书下载地址
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