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MBRB1045G价格
参考价格:¥2.7258
型号:MBRB1045G 品牌:ONSemi 备注:这里有MBRB1045G多少钱,2026年最近7天走势,今日出价,今日竞价,MBRB1045G批发/采购报价,MBRB1045G行情走势销售排行榜,MBRB1045G报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MBRB1045G | Switch-mode Schottky Power Rectifier SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suite | ONSEMI 安森美半导体 | ||
MBRB1045G | SWITCHMODE Schottky Power Rectifier Switch-mode Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally sui | ONSEMI 安森美半导体 | ||
MBRB1045G | Schottky Power Rectifier, Switch-Mode, 10 A, 45 V This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supp | ONSEMI 安森美半导体 | ||
MBRB1045G | SWITCHMODE Schottky Power Rectifier Surface Mount Power Package SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suite | ONSEMI 安森美半导体 | ||
MBRB1045G | SWITCHMODE Schottky Power Rectifier 文件:112.95 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | ||
MBRB1045G | 封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE SCHOTTKY 45V 10A D2PAK 分立半导体产品 二极管 - 整流器 - 单 | ONSEMI 安森美半导体 | ||
Schottky Power Rectifier, Switch-Mode, 10 A, 45 V This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supp | ONSEMI 安森美半导体 | |||
SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 20 to 45 VOLTS Switchmode Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse Avalanche • Ep | MOTOROLA 摩托罗拉 | |||
SWITCHMODE??Schottky Power Rectifirers SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers | MOTOROLA 摩托罗拉 | |||
Rectifier diodes Schottky barrier GENERAL DESCRIPTION Schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR1045F series is supplied in the SOD100 package. The PBYR1045X series is s | PHILIPS 飞利浦 | |||
Rectifier diodes Schottky barrier GENERAL DESCRIPTION Schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR1045F series is supplied in the SOD100 package. The PBYR1045X series is s | PHILIPS 飞利浦 | |||
SCHOTTKY BARRIER RECTIFIERS(10A,30-45V) SWITCHMODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features: * Low Forward Voltage * Low Switching noise * High Surge Capacity * Guara | MOSPEC 统懋 |
MBRB1045G产品属性
- 类型
描述
- 型号
MBRB1045G
- 功能描述
肖特基二极管与整流器 10A 45V
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
25+ |
TO220 |
32360 |
ON/安森美全新特价MBRB1045G即刻询购立享优惠#长期有货 |
|||
onsemi(安森美) |
25+ |
D2PAK-3 |
7786 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ON(安森美) |
26+ |
NA |
60000 |
只有原装 可配单 |
|||
ON |
1932+ |
TO-263 |
405 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ON/安森美 |
25+ |
TO220 |
50000 |
全新原装现货特价销售,欢迎来电查询 |
|||
ON/安森美 |
24+ |
TSSOP |
10000 |
原装进口只做订货 寻找优势渠道合作 |
|||
ON(安森美) |
23+ |
11108 |
公司只做原装正品,假一赔十 |
||||
ON/安森美 |
2450+ |
NA |
9850 |
只做原装正品现货!或订货假一赔十! |
|||
ON |
25+ |
D2PAK3 |
3200 |
全新原装、诚信经营、公司现货销售! |
|||
ON/安森美 |
2022+ |
5000 |
只做原装,价格优惠,长期供货。 |
MBRB1045G规格书下载地址
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2013-2-17
DdatasheetPDF页码索引
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