60 AMP SCHOTTKY RECTIFIER

60 Amp Schottky Rectifier ● Schottky Barrier Rectifer ● Low forward voltsge ● Guard Ring Protected ● Reverse Energy Tested ● 150°C Junction Temperature ● VRRM -35 to 45 Volts

Schottky Power Diode, 60A

Features • Fast Switching • Low forward voltage drop • High surge capability • High efficiency, low power loss • Normal and Reverse polarity

SCHOTTKY DIODES STUD TYPE 60A

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Silicon Power Schottky Diode

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封装/外壳：DO-203AB，DO-5，接线柱 包装：散装 描述：DIODE SCHOTTKY 40V 60A DO5 分立半导体产品 二极管 - 整流器 - 单

SCHOTTKY DIODES STUD TYPE 60 A

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SCHOTTKY BARRIER RECTIFIERS

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-O Construction utilizes void-free molded plastic technique Low reverse leakage High forward surge current capability High temperature soldering guaranteed250C/10 seconds at terminals

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE: 30 - 100 V CURRENT: 60 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard r

Schottky Barrier Rectifiers

Features ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection.

60A SCHOTTKY BARRIER RECTIFIER

Features • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection

60 Amp Schottky Barrier Rectifier 30 to 45 Volts

Features · Meatl of Silicon Rectifier, Majority Conducton · Guard ring for transient protection · Low Forward Voltage Drop · High Current Capability, High Efficiency · Low Power Loss

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE 20 to 100 Volts CURRENT 60 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capabili

60 AMPERES SCHOTTKY BARRIER RECTIFIERS

VOLTAGE 20 to 100 Volts CURRENT 60 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capabili

Wide Temperature Range and High Tjm Schottky Barrier Rectifiers

Wide Temperature Range and High Tjm Schottky Barrier Rectifiers FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * Plastic package has UL flammabi

SCHOTTKY BARRIER RECTIFIERS

Feaures High efficiencty operation and Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std..(Halogen Free) Low stored charge majority carrier conduction

60Ampere Heatsink Dual Common Cathode Schottky Barrier Rectifier Diodes

Features  Low forward voltage drop  ThinkiSemi matured planar process schottky  High current capability  High surge current capability  Low reverse leakage current Application  Inverter/UPS  Plating Power Supply/SMPS  Car Audio Amplifier and Sound Device System

Schottky Barrier Rectifier

Reverse Voltage: 30 to 100V Forward Current: 60.0A RoHS Device Features - Guard ring for overvoltage protection. - Low power loss, high efficiency. - Low reverse leakage current. - High Surge Current Capability.

Schottky Power Diode, 60A

Features • Fast Switching • Low forward voltage drop • High surge capability • High efficiency, low power loss • Normal and Reverse polarity

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE 40 to 100 Volts CURRENT 60 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High cur

SCHOTTKY RECTIFIER

Features: • 150°C TJ operation • Center tap TO-247AD package • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • Th

MBR6040WT/MBR6045WT SCHOTTKY RECTIFIER

Features 150 C TJ operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability Terminals finish: 100 Pure Tin This is a P

60.0A SCHOTTKY BARRIER DIODE

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Schottky Barrier Rectifiers Reverse Voltage 40 to 200 Volts, Forward Current 60A

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High Tjm Low IRRM Schottky Barrier Diodes

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60A SCHOTTKY BARRIER RECTIFIER

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SCHOTTKY BARRIER RECTIFIERS

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SCHOTTKY BARRIER RECTIFIERS

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封装/外壳：TO-247-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SCHOTTKY BARRIER RECTIFIERS 分立半导体产品 二极管 - 整流器 - 阵列

SCHOTTKY BARRIER RECTIFIERS

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SCHOTTKY BARRIER RECTIFIERS

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High Surge Capability

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SCHOTTKY DIODES STUD TYPE 60 A

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SCHOTTKY DIODES STUD TYPE 60A

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Silicon Power Schottky Diode

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N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 15.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D