60A SCHOTTKY BARRIER RECTIFIER

Features • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection

60 Amp Schottky Barrier Rectifier 30 to 45 Volts

Features · Meatl of Silicon Rectifier, Majority Conducton · Guard ring for transient protection · Low Forward Voltage Drop · High Current Capability, High Efficiency · Low Power Loss

60 AMPERES SCHOTTKY BARRIER RECTIFIERS

VOLTAGE 20 to 100 Volts CURRENT 60 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capabili

Wide Temperature Range and High Tjm Schottky Barrier Rectifiers

Wide Temperature Range and High Tjm Schottky Barrier Rectifiers FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * Plastic package has UL flammabi

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE 20 to 100 Volts CURRENT 60 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capabili

SCHOTTKY BARRIER RECTIFIERS

Feaures High efficiencty operation and Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std..(Halogen Free) Low stored charge majority carrier conduction

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE: 30 - 100 V CURRENT: 60 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard r

Schottky Barrier Rectifiers

Features ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection.

60Ampere Heatsink Dual Common Cathode Schottky Barrier Rectifier Diodes

Features  Low forward voltage drop  ThinkiSemi matured planar process schottky  High current capability  High surge current capability  Low reverse leakage current Application  Inverter/UPS  Plating Power Supply/SMPS  Car Audio Amplifier and Sound Device System

封装/外壳：TO-3P-3，SC-65-3 包装：管件 描述：DIODE ARRAY SCHOTTKY 40V TO3P 分立半导体产品 二极管 - 整流器 - 阵列

Schottky

60.0A SCHOTTKY BARRIER DIODE

文件：166.76 Kbytes Page：2 Pages

Schottky Barrier Rectifiers Reverse Voltage 40 to 200 Volts, Forward Current 60A

文件：393.83 Kbytes Page：2 Pages

High Tjm Low IRRM Schottky Barrier Diodes

文件：133.82 Kbytes Page：2 Pages

60A SCHOTTKY BARRIER RECTIFIER

文件：65.62 Kbytes Page：3 Pages

Schottky Barrier Rectifier

Reverse Voltage: 30 to 100V Forward Current: 60.0A RoHS Device Features - Guard ring for overvoltage protection. - Low power loss, high efficiency. - Low reverse leakage current. - High Surge Current Capability.

SCHOTTKY BARRIER RECTIFIERS

文件：234.13 Kbytes Page：4 Pages

SCHOTTKY BARRIER RECTIFIERS

文件：234.13 Kbytes Page：4 Pages

SCHOTTKY BARRIER RECTIFIERS

文件：234.13 Kbytes Page：4 Pages

SCHOTTKY BARRIER RECTIFIERS

文件：113.63 Kbytes Page：4 Pages

包装：管件 描述：DIODE SCHOTTKY 60A 40V TO-247AD 分立半导体产品 二极管 - 整流器 - 单

Si Schottky Rectifier Diodes

Schottky Barrier Rectifiers Diodes

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 15.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D