ULTRAFAST RECTIFIERS 60 AMPERES 400 VOLTS

SWITCHMODE™ Power Rectifier . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 100 Nanosecond Recovery Time • 175°C Operating Junction Temperature • High Voltage Capabili

Ultrafast Rectifier

FEATURES ·Guarding for over voltage protection ·Dual rectifier construction,positive center tap ·Metal of silicon rectifier,majority carrier conduction ·Low forward voltage,high efficiency ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operat

Power Rectifier

Ultra Fast Recovery Diodes

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Power Rectifier

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Ultra Fast Recovery Diodes

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Ultrafast Soft Recovery Diode, 400V, 60A

Features: Ultrafast Recovery 175℃ operating junction temperature High frequency operation Low IR value High surge capacity Epitaxial chip construction Applications: Switched mode power supply Freewheeling diode, Snubber diode UPS

60.0 Ampere Heatsink Dual Common Anode Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power Supply

60.0 Ampere Heatsink Dual Series Connection Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power Supply

60.0 Ampere Heatsink Dual Doubler Polarity Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power Supply

60.0 Ampere Heatsink Dual Common Cathode Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power Supply

Ultra Fast Recovery Diodes

FEATURES * International standard package JEDEC TO-247AD * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour APPLICATIONS * Rectifiers in switch mode power supplies (SMPS) * Uninterruptible po

GLASS PASSIVATED SUPER FAST RECTIFIER

FEATURES Plastic Material has UL Flammability Classification 94V-O Low Power loss, High Efficiency Low Reverse Leakage Current SuperFast Switching,High Efficiency High Surge Current Capability Fred Chip Planar Construction

Rectifiers in switch mode power supplies (SMPS)

FEATURES * International standard package JEDEC TO-247AD * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour APPLICATIONS * Rectifiers in switch mode power supplies (SMPS) * Uninterruptible po

Ultra Fast Recovery Diodes

FEATURES * International standard package JEDEC TO-247AD * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour APPLICATIONS * Rectifiers in switch mode power supplies (SMPS) * Uninterruptible po

封装/外壳：TO-247-2 包装：管件 描述：ULTRA FAST RECTIFIERS 400V 60A, 分立半导体产品 二极管 - 整流器 - 单

快恢复整流管

超快恢复二极管

ULTRA FAST RECOVERY RECTIFIERS

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Ultrafast Rectifier

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Ultra Fast Recovery Diodes

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Ultra Fast Recovery Diodes

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60 Amperes HeatSink Dual Common Anode Ultra Fast Recovery Rectifiers

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ULTRAFAST PLASTIC RECTIFIER

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N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 15.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D