型号 功能描述 生产厂家&企业 LOGO 操作
MBR10XX

Schottky Barrier Rectifier

FEATURES • Power pack • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B1

VishayVishay Siliconix

威世科技威世科技半导体

MBR10XX

Schottky Barrier Rectifiers

文件:255.85 Kbytes Page:3 Pages

Good-Ark

MBR10XX

Schottky Barrier Rectifier

文件:134.71 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技威世科技半导体

MBR10XX

Schottky Barrier Rectifiers Reverse Voltage 35 to 60 Volts , Forward Current 10.0 Amperes

文件:319.37 Kbytes Page:3 Pages

FS

MBR10XX

SCHOTTKY BARRIER RECTIFIER

文件:292.94 Kbytes Page:3 Pages

HORNBY

南通康比电子

Schottky Barrier Rectifier

FEATURES • Power pack • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B1

VishayVishay Siliconix

威世科技威世科技半导体

SCHOTTKY BARRIER RECTIFIER

REVERSE VOLTAGE: 35 to 200 VOLTS FORWARD CURRENT: 10.0 AMPERE FEATURES • Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 • Metal silicon junction, majority carrier conduction • Guard ring for overvoltage protection • Low power loss, high efficiency • For u

HORNBY

南通康比电子

High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum

VishayVishay Siliconix

威世科技威世科技半导体

High Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximu

VishayVishay Siliconix

威世科技威世科技半导体

High Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximu

VishayVishay Siliconix

威世科技威世科技半导体

Schottky Barrier Rectifier

文件:129.199 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技威世科技半导体

High Voltage Trench MOS Barrier Schottky Rectifier

文件:685.3 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技威世科技半导体

MBR10XX产品属性

  • 类型

    描述

  • 型号

    MBR10XX

  • 制造商

    GOOD-ARK

  • 制造商全称

    GOOD-ARK Electronics

  • 功能描述

    Schottky Barrier Rectifiers

更新时间:2025-8-17 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
NA/
3853
原装现货,当天可交货,原型号开票
ON(安森美)
24+
NA/
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
IR
2016+
DO-41
6528
房间原装进口现货假一赔十
ON
25+23+
DO-41
18704
绝对原装正品全新进口深圳现货
FASTRON
25+
NA
880000
明嘉莱只做原装正品现货
IR
24+
3000
公司现货
IR
17+
DO
6200
100%原装正品现货
ON
23+
DO-41
5000
原装正品,假一罚十
ON(安森美)
23+
标准封装
5000
原厂原装现货订货价格优势终端BOM表可配单提供样品
ON/安森美
22+
DO-41
25000
只有原装原装,支持BOM配单

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