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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MBR10XX | Schottky Barrier Rectifier FEATURES • Power pack • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B1 | VishayVishay Siliconix 威世威世科技公司 |   | |
MBR10XX | Schottky Barrier Rectifiers 文件：255.85 Kbytes Page：3 Pages | Good-Ark 固锝电子 | | |
MBR10XX | Schottky Barrier Rectifier 文件：134.71 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
MBR10XX | Schottky Barrier Rectifiers Reverse Voltage 35 to 60 Volts , Forward Current 10.0 Amperes 文件：319.37 Kbytes Page：3 Pages | FS | | |
MBR10XX | SCHOTTKY BARRIER RECTIFIER 文件：292.94 Kbytes Page：3 Pages | HORNBY 南通康比电子 | | |
Schottky Barrier Rectifier FEATURES • Power pack • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B1 | VishayVishay Siliconix 威世威世科技公司 | | ||
SCHOTTKY BARRIER RECTIFIER REVERSE VOLTAGE: 35 to 200 VOLTS FORWARD CURRENT: 10.0 AMPERE FEATURES • Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 • Metal silicon junction, majority carrier conduction • Guard ring for overvoltage protection • Low power loss, high efficiency • For u | HORNBY 南通康比电子 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum | VishayVishay Siliconix 威世威世科技公司 | | ||
High Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximu | VishayVishay Siliconix 威世威世科技公司 | | ||
High Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximu | VishayVishay Siliconix 威世威世科技公司 | | ||
Schottky Barrier Rectifier 文件：129.199 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Schottky Rectifiers | Surge | | ||
High Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世威世科技公司 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier 文件：685.3 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | |
MBR10XX产品属性
- 类型
描述
- 型号
MBR10XX
- 制造商
GOOD-ARK
- 制造商全称
GOOD-ARK Electronics
- 功能描述
Schottky Barrier Rectifiers
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
24+ |
NA/ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
IR |
24+ |
NA/ |
3853 |
原装现货,当天可交货,原型号开票 |
|||
IR |
04+ |
DO-41 |
603 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ON/安森美 |
24+ |
DO-41 |
1313 |
大批量供应优势库存热卖 |
|||
ON(安森美) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
VISHAY |
20+ |
na |
65790 |
原装优势主营型号-可开原型号增税票 |
|||
ONSEMI |
21+ |
DO-41 |
7477 |
百域芯优势 实单必成 可开13点增值税 |
|||
FASTRON |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
DIP |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
ON |
25+23+ |
DO-41 |
18704 |
绝对原装正品全新进口深圳现货 |
MBR10XX规格书下载地址
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2019-2-25
DdatasheetPDF页码索引
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