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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MBR10XXX-E3 | High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum | VishayVishay Siliconix 威世科技威世科技半导体 |   | |
MBR10XXX-E3 | High Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximu | VishayVishay Siliconix 威世科技威世科技半导体 | | |
High Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximu | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier 文件：685.3 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximu | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximu | VishayVishay Siliconix 威世科技威世科技半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
20+ |
na |
65790 |
原装优势主营型号-可开原型号增税票 |
|||
FASTRON |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
ON(安森美) |
23+ |
19217 |
公司只做原装正品,假一赔十 |
||||
IR |
2016+ |
DO-41 |
6528 |
房间原装进口现货假一赔十 |
|||
ON(安森美) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
DIP |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
ONSEMI |
21+ |
DO-41 |
7477 |
百域芯优势 实单必成 可开13点增值税 |
|||
onsemi |
25+ |
轴向 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
ON |
25+23+ |
DO-41 |
18704 |
绝对原装正品全新进口深圳现货 |
|||
IR |
23+ |
DO-41 |
12800 |
公司只有原装 欢迎来电咨询。 |
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2019-2-25
DdatasheetPDF页码索引
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