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MBR10H价格
参考价格：￥7.2346
型号：MBR10H100CT-E3/45 品牌：VIS 备注：这里有MBR10H多少钱，2025年最近7天走势，今日出价，今日竞价，MBR10H批发/采购报价，MBR10H行情走势销售排行榜，MBR10H报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MBR10H | Schottky Barrier Rectifiers High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequenc | VishayVishay Siliconix 威世威世科技公司 |   | |
MBR10H | Schottky Barrier Rectifiers | VishayVishay Siliconix 威世威世科技公司 | | |
High Voltage Schottky Rectifiers High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequenc | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Schottky Rectifier High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequenc | VishayVishay Siliconix 威世威世科技公司 | | ||
Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low voltage, high fr | KERSEMI | | ||
High Voltage Schottky Rectifier FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) | VishayVishay Siliconix 威世威世科技公司 | | ||
High Voltage Schottky Rectifier FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Schottky Rectifiers Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual Common Cathode High Voltage Schottky Rectifier FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) | VishayVishay Siliconix 威世威世科技公司 | | ||
SWITCHMODE Power Rectifier 100 V, 10 A Features and Benefits • Low Forward Voltage: 0.61 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 10 A Total (5.0 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free Package is Available Applications • Power Supply − Ou | ONSEMI 安森美半导体 | | ||
MBR10H100CT, MBRF10H100CT & MBRB10H100CT Series Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low vol | VAISH 威世 | | ||
SWITCHMODE Power Rectifier 100 V, 10 A Features and Benefits • Low Forward Voltage: 0.61 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 10 A Total (5.0 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free Package is Available Applications • Power Supply − Outp | ONSEMI 安森美半导体 | | ||
10.0 AMPS. Schottky Barrier Rectifiers Features ● Plastic material used carries Underwriters Laboratory Classifications 94V-0 ● Metal silicon junction, majority carrier conduction ● Low power loss, high efficiency ● High current capability, low forward voltage drop ● High surge capability ● For use in power supply – output rectif | TSC 台湾半导体 | | ||
Dual Common-Cathode High-Voltage Schottky Rectifier Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H | VishayVishay Siliconix 威世威世科技公司 | | ||
Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvo | KERSEMI | | ||
Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvo | KERSEMI | | ||
10.0AMP. Schottky Barrier Rectifiers Features ● Plastic material used carries Underwriters Laboratory Classifications 94V-0 ● Metal silicon junction, majority carrier conduction ● Low power loss, high efficiency ● High current capability, low forward voltage drop ● High surge capability ● For use in power supply – output rectif | LUGUANG 鲁光电子 | | ||
Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvo | KERSEMI | | ||
SCHOTTKY BARRIER RECTIFIERS Features High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std..(Halogen Free) Low stored charge majority carrier conduction | SUNMATE 森美特 | | ||
Dual Common Cathode High Voltage Schottky Rectifier FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual Common-Cathode High-Voltage Schottky Rectifier Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual Common-Cathode High-Voltage Schottky Rectifier Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H | VishayVishay Siliconix 威世威世科技公司 | | ||
SWITCHMODE Power Rectifier 100 V, 10 A Features and Benefits • Low Forward Voltage: 0.61 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 10 A Total (5.0 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free Package is Available Applications • Power Supply − Outp | ONSEMI 安森美半导体 | | ||
SWITCHMODE Power Rectifier 100 V, 10 A Features and Benefits • Low Forward Voltage: 0.61 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 10 A Total (5.0 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free Package is Available Applications • Power Supply − Ou | ONSEMI 安森美半导体 | | ||
SWITCHMODE Power Rectifier 100 V, 10 A Features and Benefits • Low Forward Voltage: 0.61 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 10 A Total (5.0 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free Package is Available Applications • Power Supply − Ou | ONSEMI 安森美半导体 | | ||
SWITCHMODE Power Rectifier 100 V, 10 A Features and Benefits • Low Forward Voltage: 0.61 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 10 A Total (5.0 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free Package is Available Applications • Power Supply − Ou | ONSEMI 安森美半导体 | | ||
Dual Common-Cathode High-Voltage Schottky Rectifier Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual Common-Cathode High-Voltage Schottky Rectifier Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Schottky Rectifier High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequenc | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Schottky Rectifier High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequenc | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Schottky Rectifier High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequenc | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Schottky Rectifier High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequenc | VishayVishay Siliconix 威世威世科技公司 | | ||
10.0 AMPS. Schottky Barrier Rectifiers Features ● Plastic material used carries Underwriters Laboratory Classifications 94V-0 ● Metal silicon junction, majority carrier conduction ● Low power loss, high efficiency ● High current capability, low forward voltage drop ● High surge capability ● For use in power supply – output rectif | TSC 台湾半导体 | | ||
SCHOTTKY BARRIER RECTIFIERS Features High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std..(Halogen Free) Low stored charge majority carrier conduction | SUNMATE 森美特 | | ||
10.0AMP. Schottky Barrier Rectifiers Features ● Plastic material used carries Underwriters Laboratory Classifications 94V-0 ● Metal silicon junction, majority carrier conduction ● Low power loss, high efficiency ● High current capability, low forward voltage drop ● High surge capability ● For use in power supply – output rectif | LUGUANG 鲁光电子 | | ||
Surface Mount Ultra Low IR Schottky Barrier Rectifier Features Low leakage current Ideal for automated placement Low power loss, high efficiency High surge current capability Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard | PANJIT 強茂 | | ||
Surface Mount Ultra Low IR Schottky Barrier Rectifier Features Low leakage current Ideal for automated placement Low power loss, high efficiency High surge current capability AEC-Q101 qualified Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard | PANJIT 強茂 | | ||
10.0AMP. Schottky Barrier Rectifiers Features ● Plastic material used carries Underwriters Laboratory Classifications 94V-0 ● Metal silicon junction, majority carrier conduction ● Low power loss, high efficiency ● High current capability, low forward voltage drop ● High surge capability ● For use in power supply – output rectif | LUGUANG 鲁光电子 | | ||
SCHOTTKY BARRIER RECTIFIERS Features High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std..(Halogen Free) Low stored charge majority carrier conduction | SUNMATE 森美特 | | ||
10.0 AMPS. Schottky Barrier Rectifiers Features ● Plastic material used carries Underwriters Laboratory Classifications 94V-0 ● Metal silicon junction, majority carrier conduction ● Low power loss, high efficiency ● High current capability, low forward voltage drop ● High surge capability ● For use in power supply – output rectif | TSC 台湾半导体 | | ||
Plastic package has Underwriters Laboratory Flammability Classification 94 V-0 Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94 V-0 • Metal silicon junction, majority carrier conduction • Low forward voltage drop, low power loss and high efficiency • Guardring for overvoltage protection • Fo | KERSEMI | | ||
Schottky Barrier Rectifiers High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequenc | VishayVishay Siliconix 威世威世科技公司 | | ||
Schottky Barrier Rectifier Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequ | VishayVishay Siliconix 威世威世科技公司 | | ||
SCHOTTKY BARRIER RECTIFIERS Features High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std..(Halogen Free) Low stored charge majority carrier conduction | SUNMATE 森美特 | | ||
Schottky Barrier Rectifiers High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequenc | VishayVishay Siliconix 威世威世科技公司 | | ||
Schottky Barrier Rectifier Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequ | VishayVishay Siliconix 威世威世科技公司 | | ||
Plastic package has Underwriters Laboratory Flammability Classification 94 V-0 Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94 V-0 • Metal silicon junction, majority carrier conduction • Low forward voltage drop, low power loss and high efficiency • Guardring for overvoltage protection • Fo | KERSEMI | | ||
SCHOTTKY BARRIER RECTIFIERS Features High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std..(Halogen Free) Low stored charge majority carrier conduction | SUNMATE 森美特 | | ||
Schottky Barrier Rectifier Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequ | VishayVishay Siliconix 威世威世科技公司 | | ||
Schottky Barrier Rectifier Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequ | VishayVishay Siliconix 威世威世科技公司 | | ||
Schottky Barrier Rectifier Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequ | VishayVishay Siliconix 威世威世科技公司 | | ||
Schottky Barrier Rectifier Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequ | VishayVishay Siliconix 威世威世科技公司 | | ||
Schottky Barrier Rectifiers High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequenc | VishayVishay Siliconix 威世威世科技公司 | | ||
Schottky Barrier Rectifier Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequ | VishayVishay Siliconix 威世威世科技公司 | | ||
Plastic package has Underwriters Laboratory Flammability Classification 94 V-0 Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94 V-0 • Metal silicon junction, majority carrier conduction • Low forward voltage drop, low power loss and high efficiency • Guardring for overvoltage protection • Fo | KERSEMI | | ||
Schottky Barrier Rectifiers High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequenc | VishayVishay Siliconix 威世威世科技公司 | | ||
Schottky Barrier Rectifier Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequ | VishayVishay Siliconix 威世威世科技公司 | | ||
Metal silicon junction, majority carrier conduction Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94 V-0 • Metal silicon junction, majority carrier conduction • Low forward voltage drop, low power loss and high efficiency • Guardring for overvoltage protection • Fo | KERSEMI | | ||
Plastic package has Underwriters Laboratory Flammability Classification 94 V-0 Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94 V-0 • Metal silicon junction, majority carrier conduction • Low forward voltage drop, low power loss and high efficiency • Guardring for overvoltage protection • Fo | KERSEMI | | ||
SCHOTTKY BARRIER RECTIFIERS Features High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std..(Halogen Free) Low stored charge majority carrier conduction | SUNMATE 森美特 | |
MBR10H产品属性
- 类型
描述
- 型号
MBR10H
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Schottky Barrier Rectifiers
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PANJIT/强茂 |
2023+ |
TO-220AB |
8000 |
原厂全新正品旗舰店优势现货 |
|||
VISHAY |
25+23+ |
TO-220 |
16425 |
绝对原装正品全新进口深圳现货 |
|||
ON |
23+ |
TO-220 |
6800 |
只做原装正品假一赔十为客户做到零风险!! |
|||
TSC |
17+ |
TO-220 |
6200 |
||||
TSC台半 |
25+ |
原厂原封装 |
86720 |
代理授权原装正品价格最实惠 本公司承诺假一赔百 |
|||
ON |
23+ |
TO220AB |
5000 |
原装正品,假一罚十 |
|||
ON |
24+ |
TO-2203LEADSTANDA |
8866 |
||||
VISHAY/威世 |
24+ |
TO220 |
9600 |
原装现货,优势供应,支持实单! |
|||
ON(安森美) |
23+ |
标准封装 |
5000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
VISHAY/威世 |
21+ |
TO220 |
3945 |
MBR10H规格书下载地址
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2019-2-25
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