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MBR10H价格

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型号：MBR10H100CT-E3/45 品牌：VIS 备注：这里有MBR10H多少钱，2025年最近7天走势，今日出价，今日竞价，MBR10H批发/采购报价，MBR10H行情走势销售排行榜，MBR10H报价。

型号	功能描述	生产厂家&企业	LOGO
MBR10H	Schottky Barrier Rectifiers High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequenc	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
MBR10H100	High Voltage Schottky Rectifiers High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequenc	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
MBR10H100	High-Voltage Schottky Rectifier High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequenc	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
MBR10H100	Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low voltage, high fr	KERSEMI	KERSEMI
MBR10H100	High Voltage Schottky Rectifier FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
MBR10H100_V01	High Voltage Schottky Rectifier FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
MBR10H100CT	Dual High-Voltage Schottky Rectifiers Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
MBR10H100CT	Dual Common Cathode High Voltage Schottky Rectifier FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
MBR10H100CT	MBR10H100CT, MBRF10H100CT & MBRB10H100CT Series Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low vol	VAISH	VAISH
MBR10H100CT	SWITCHMODE Power Rectifier 100 V, 10 A Features and Benefits • Low Forward Voltage: 0.61 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 10 A Total (5.0 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free Package is Available Applications • Power Supply − Outp	ONSEMI 安森美半导体	ONSEMI
MBR10H100CT	10.0 AMPS. Schottky Barrier Rectifiers Features ● Plastic material used carries Underwriters Laboratory Classifications 94V-0 ● Metal silicon junction, majority carrier conduction ● Low power loss, high efficiency ● High current capability, low forward voltage drop ● High surge capability ● For use in power supply – output rectif	TSC 台湾半导体	TSC
MBR10H100CT	Dual Common-Cathode High-Voltage Schottky Rectifier Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
MBR10H100CT	Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvo	KERSEMI	KERSEMI
MBR10H100CT	Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvo	KERSEMI	KERSEMI
MBR10H100CT	10.0AMP. Schottky Barrier Rectifiers Features ● Plastic material used carries Underwriters Laboratory Classifications 94V-0 ● Metal silicon junction, majority carrier conduction ● Low power loss, high efficiency ● High current capability, low forward voltage drop ● High surge capability ● For use in power supply – output rectif	LUGUANG 鲁光电子	LUGUANG
MBR10H100CT	Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvo	KERSEMI	KERSEMI
MBR10H100CT	SCHOTTKY BARRIER RECTIFIERS Features  High efficiencty operation  Low power loss  High forward surge capability  Lead free in compliance with EU RoHS 2011/65/EU directive  Green molding compound as per IEC61249 Std..(Halogen Free)  Low stored charge majority carrier conduction	SUNMATE 森美特	SUNMATE
MBR10H100CT_V01	Dual Common Cathode High Voltage Schottky Rectifier FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
MBR10H100CT-E3/45	Dual Common-Cathode High-Voltage Schottky Rectifier Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
MBR10H100CT-E3SLASH45	Dual Common-Cathode High-Voltage Schottky Rectifier Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
MBR10H100CTG	SWITCHMODE Power Rectifier 100 V, 10 A Features and Benefits • Low Forward Voltage: 0.61 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 10 A Total (5.0 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free Package is Available Applications • Power Supply − Outp	ONSEMI 安森美半导体	ONSEMI
MBR10H100CTHE3/45	Dual Common-Cathode High-Voltage Schottky Rectifier Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
MBR10H100CTHE3SLASH45	Dual Common-Cathode High-Voltage Schottky Rectifier Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
MBR10H100-E3/45	High-Voltage Schottky Rectifier High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequenc	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
MBR10H100-E3SLASH45	High-Voltage Schottky Rectifier High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequenc	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
MBR10H100HE3/45	High-Voltage Schottky Rectifier High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequenc	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
MBR10H100HE3SLASH45	High-Voltage Schottky Rectifier High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequenc	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
MBR10H150CT	10.0AMP. Schottky Barrier Rectifiers Features ● Plastic material used carries Underwriters Laboratory Classifications 94V-0 ● Metal silicon junction, majority carrier conduction ● Low power loss, high efficiency ● High current capability, low forward voltage drop ● High surge capability ● For use in power supply – output rectif	LUGUANG 鲁光电子	LUGUANG
MBR10H150CT	10.0 AMPS. Schottky Barrier Rectifiers Features ● Plastic material used carries Underwriters Laboratory Classifications 94V-0 ● Metal silicon junction, majority carrier conduction ● Low power loss, high efficiency ● High current capability, low forward voltage drop ● High surge capability ● For use in power supply – output rectif	TSC 台湾半导体	TSC
MBR10H150CT	SCHOTTKY BARRIER RECTIFIERS Features  High efficiencty operation  Low power loss  High forward surge capability  Lead free in compliance with EU RoHS 2011/65/EU directive  Green molding compound as per IEC61249 Std..(Halogen Free)  Low stored charge majority carrier conduction	SUNMATE 森美特	SUNMATE
MBR10H150PC	Surface Mount Ultra Low IR Schottky Barrier Rectifier Features Low leakage current Ideal for automated placement Low power loss, high efficiency High surge current capability Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard	PANJIT 強茂	PANJIT
MBR10H150PC-AU	Surface Mount Ultra Low IR Schottky Barrier Rectifier Features Low leakage current Ideal for automated placement Low power loss, high efficiency High surge current capability AEC-Q101 qualified Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard	PANJIT 強茂	PANJIT
MBR10H200CT	10.0 AMPS. Schottky Barrier Rectifiers Features ● Plastic material used carries Underwriters Laboratory Classifications 94V-0 ● Metal silicon junction, majority carrier conduction ● Low power loss, high efficiency ● High current capability, low forward voltage drop ● High surge capability ● For use in power supply – output rectif	TSC 台湾半导体	TSC
MBR10H200CT	10.0AMP. Schottky Barrier Rectifiers Features ● Plastic material used carries Underwriters Laboratory Classifications 94V-0 ● Metal silicon junction, majority carrier conduction ● Low power loss, high efficiency ● High current capability, low forward voltage drop ● High surge capability ● For use in power supply – output rectif	LUGUANG 鲁光电子	LUGUANG
MBR10H200CT	SCHOTTKY BARRIER RECTIFIERS Features  High efficiencty operation  Low power loss  High forward surge capability  Lead free in compliance with EU RoHS 2011/65/EU directive  Green molding compound as per IEC61249 Std..(Halogen Free)  Low stored charge majority carrier conduction	SUNMATE 森美特	SUNMATE
MBR10H35	Schottky Barrier Rectifiers High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequenc	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
MBR10H35	Schottky Barrier Rectifier Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequ	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
MBR10H35	Plastic package has Underwriters Laboratory Flammability Classification 94 V-0 Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94 V-0 • Metal silicon junction, majority carrier conduction • Low forward voltage drop, low power loss and high efficiency • Guardring for overvoltage protection • Fo	KERSEMI	KERSEMI
MBR10H40CT	SCHOTTKY BARRIER RECTIFIERS Features  High efficiencty operation  Low power loss  High forward surge capability  Lead free in compliance with EU RoHS 2011/65/EU directive  Green molding compound as per IEC61249 Std..(Halogen Free)  Low stored charge majority carrier conduction	SUNMATE 森美特	SUNMATE
MBR10H45	Schottky Barrier Rectifiers High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequenc	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
MBR10H45	Schottky Barrier Rectifier Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequ	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
MBR10H45	Plastic package has Underwriters Laboratory Flammability Classification 94 V-0 Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94 V-0 • Metal silicon junction, majority carrier conduction • Low forward voltage drop, low power loss and high efficiency • Guardring for overvoltage protection • Fo	KERSEMI	KERSEMI
MBR10H45CT	SCHOTTKY BARRIER RECTIFIERS Features  High efficiencty operation  Low power loss  High forward surge capability  Lead free in compliance with EU RoHS 2011/65/EU directive  Green molding compound as per IEC61249 Std..(Halogen Free)  Low stored charge majority carrier conduction	SUNMATE 森美特	SUNMATE
MBR10H45-E3/45	Schottky Barrier Rectifier Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequ	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
MBR10H45-E3SLASH45	Schottky Barrier Rectifier Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequ	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
MBR10H45HE3/45	Schottky Barrier Rectifier Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequ	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
MBR10H45HE3SLASH45	Schottky Barrier Rectifier Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequ	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
MBR10H50	Schottky Barrier Rectifiers High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequenc	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
MBR10H50	Schottky Barrier Rectifier Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequ	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
MBR10H50	Plastic package has Underwriters Laboratory Flammability Classification 94 V-0 Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94 V-0 • Metal silicon junction, majority carrier conduction • Low forward voltage drop, low power loss and high efficiency • Guardring for overvoltage protection • Fo	KERSEMI	KERSEMI
MBR10H60	Schottky Barrier Rectifiers High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequenc	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
MBR10H60	Schottky Barrier Rectifier Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequ	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
MBR10H60	Metal silicon junction, majority carrier conduction Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94 V-0 • Metal silicon junction, majority carrier conduction • Low forward voltage drop, low power loss and high efficiency • Guardring for overvoltage protection • Fo	KERSEMI	KERSEMI
MBR10H60	Plastic package has Underwriters Laboratory Flammability Classification 94 V-0 Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94 V-0 • Metal silicon junction, majority carrier conduction • Low forward voltage drop, low power loss and high efficiency • Guardring for overvoltage protection • Fo	KERSEMI	KERSEMI
MBR10H60CT	SCHOTTKY BARRIER RECTIFIERS Features  High efficiencty operation  Low power loss  High forward surge capability  Lead free in compliance with EU RoHS 2011/65/EU directive  Green molding compound as per IEC61249 Std..(Halogen Free)  Low stored charge majority carrier conduction	SUNMATE 森美特	SUNMATE
MBR10H90	High Voltage Schottky Rectifiers High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequenc	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
MBR10H90	High-Voltage Schottky Rectifier High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequenc	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
MBR10H90	Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low voltage, high fr	KERSEMI	KERSEMI
MBR10H90CT	MBR10H100CT, MBRF10H100CT & MBRB10H100CT Series Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low vol	VAISH	VAISH
MBR10H90CT	Dual High-Voltage Schottky Rectifiers Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H	VishayVishay Siliconix 威世科技威世科技半导体	Vishay

MBR10H产品属性

类型
描述
型号
MBR10H
制造商
VISHAY
制造商全称
Vishay Siliconix
功能描述
Schottky Barrier Rectifiers

MBR10H供应商更多...

更新时间：2025-8-17 10:07:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市达恩科技有限公司	MBR10H100CTHE3/45	Vishay	24+	NA	3000	进口原装正品优势供应	询价
现代芯城（深圳）科技有限公司	MBR10H150CT		24+	N/A	51000	一级代理-主营优势-实惠价格-不悔选择	询价
深圳市赛特兴科技有限公司	MBR10H100CTG	ON	23+	TO-220	54	正规渠道,只有原装!	询价
瀚佳科技(深圳)有限公司	MBR10H150CT	TSC原装	24+	TO-220	30980	原装现货/放心购买	询价
深圳市一线半导体有限公司	MBR10H100CT	ON	24+	TO-2203LEADSTANDA	8866		询价
海芯未来半导体电子（深圳）有限公司	MBR10H100CT-E3/45	VI1	25+	ORIGINAL	22800	原装现货优势出货	询价
深圳市威尔健半导体有限公司	MBR10H45	通用	23+	TO-220-2	50000	全新原装正品现货,支持订货	询价
深圳市正纳电子有限公司	MBR10H100CT-E3/45	Vishay(威世)	23+	NA	20094	正纳10年以上分销经验原装进口正品做服务做口碑有支持	询价
深圳市科芯源微电子有限公司	MBR10H150CT/45	VISHAY/威世	25+	TO-220	54648	百分百原装现货实单必成欢迎询价	询价
深圳市创新迹电子有限公司	MBR10H45	VISHAY/威世	22+	TO220	12000	只做原装、原厂优势渠道、假一赔十	询价

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MBR10H规格书下载地址

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