MBR10H100价格

参考价格:¥7.2346

型号:MBR10H100CT-E3/45 品牌:VIS 备注:这里有MBR10H100多少钱,2025年最近7天走势,今日出价,今日竞价,MBR10H100批发/采购报价,MBR10H100行情走势销售排行榜,MBR10H100报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MBR10H100

High Voltage Schottky Rectifiers

High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequenc

VishayVishay Siliconix

威世威世科技公司

MBR10H100

High-Voltage Schottky Rectifier

High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequenc

VishayVishay Siliconix

威世威世科技公司

MBR10H100

Plastic package has Underwriters Laboratory Flammability Classifications 94V-0

Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low voltage, high fr

KERSEMI

MBR10H100

High Voltage Schottky Rectifier

FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)

VishayVishay Siliconix

威世威世科技公司

MBR10H100

10A,100V,Schottky Barrier Rectifiers

GALAXY

银河微电

MBR10H100

10A/100V~200V Schottky Barrier Rectifier

ETC

知名厂家

MBR10H100

High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance

VishayVishay Siliconix

威世威世科技公司

MBR10H100

High Voltage Schottky Rectifier

文件:141.65 Kbytes Page:6 Pages

VishayVishay Siliconix

威世威世科技公司

High Voltage Schottky Rectifier

FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)

VishayVishay Siliconix

威世威世科技公司

Dual Common Cathode High Voltage Schottky Rectifier

FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)

VishayVishay Siliconix

威世威世科技公司

SCHOTTKY BARRIER RECTIFIERS

Features  High efficiencty operation  Low power loss  High forward surge capability  Lead free in compliance with EU RoHS 2011/65/EU directive  Green molding compound as per IEC61249 Std..(Halogen Free)  Low stored charge majority carrier conduction

SUNMATE

森美特

SWITCHMODE Power Rectifier 100 V, 10 A

Features and Benefits • Low Forward Voltage: 0.61 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 10 A Total (5.0 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free Package is Available Applications • Power Supply − Ou

ONSEMI

安森美半导体

Plastic package has Underwriters Laboratory Flammability Classification 94V-0

Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvo

KERSEMI

Plastic package has Underwriters Laboratory Flammability Classification 94V-0

Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvo

KERSEMI

10.0AMP. Schottky Barrier Rectifiers

Features ● Plastic material used carries Underwriters Laboratory Classifications 94V-0 ● Metal silicon junction, majority carrier conduction ● Low power loss, high efficiency ● High current capability, low forward voltage drop ● High surge capability ● For use in power supply – output rectif

LUGUANG

鲁光电子

Plastic package has Underwriters Laboratory Flammability Classification 94V-0

Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvo

KERSEMI

Dual High-Voltage Schottky Rectifiers

Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H

VishayVishay Siliconix

威世威世科技公司

MBR10H100CT, MBRF10H100CT & MBRB10H100CT Series

Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low vol

VAISH

威世

10.0 AMPS. Schottky Barrier Rectifiers

Features ● Plastic material used carries Underwriters Laboratory Classifications 94V-0 ● Metal silicon junction, majority carrier conduction ● Low power loss, high efficiency ● High current capability, low forward voltage drop ● High surge capability ● For use in power supply – output rectif

TSC

台湾半导体

SWITCHMODE Power Rectifier 100 V, 10 A

Features and Benefits • Low Forward Voltage: 0.61 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 10 A Total (5.0 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free Package is Available Applications • Power Supply − Outp

ONSEMI

安森美半导体

Dual Common-Cathode High-Voltage Schottky Rectifier

Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H

VishayVishay Siliconix

威世威世科技公司

Dual Common Cathode High Voltage Schottky Rectifier

FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)

VishayVishay Siliconix

威世威世科技公司

Dual Common-Cathode High-Voltage Schottky Rectifier

Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H

VishayVishay Siliconix

威世威世科技公司

Dual Common-Cathode High-Voltage Schottky Rectifier

Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H

VishayVishay Siliconix

威世威世科技公司

SWITCHMODE Power Rectifier 100 V, 10 A

Features and Benefits • Low Forward Voltage: 0.61 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 10 A Total (5.0 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free Package is Available Applications • Power Supply − Ou

ONSEMI

安森美半导体

SWITCHMODE Power Rectifier 100 V, 10 A

Features and Benefits • Low Forward Voltage: 0.61 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 10 A Total (5.0 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free Package is Available Applications • Power Supply − Outp

ONSEMI

安森美半导体

SWITCHMODE Power Rectifier 100 V, 10 A

Features and Benefits • Low Forward Voltage: 0.61 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 10 A Total (5.0 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free Package is Available Applications • Power Supply − Ou

ONSEMI

安森美半导体

SWITCHMODE Power Rectifier 100 V, 10 A

Features and Benefits • Low Forward Voltage: 0.61 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 10 A Total (5.0 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free Package is Available Applications • Power Supply − Ou

ONSEMI

安森美半导体

Dual Common-Cathode High-Voltage Schottky Rectifier

Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H

VishayVishay Siliconix

威世威世科技公司

Dual Common-Cathode High-Voltage Schottky Rectifier

Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H

VishayVishay Siliconix

威世威世科技公司

High-Voltage Schottky Rectifier

High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequenc

VishayVishay Siliconix

威世威世科技公司

High-Voltage Schottky Rectifier

High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequenc

VishayVishay Siliconix

威世威世科技公司

High-Voltage Schottky Rectifier

High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequenc

VishayVishay Siliconix

威世威世科技公司

High-Voltage Schottky Rectifier

High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequenc

VishayVishay Siliconix

威世威世科技公司

SCHOTTKY BARRIER RECTIFIER

文件:320.12 Kbytes Page:5 Pages

RECTRON

丽正国际

Power Schottky Rectifier

文件:268.45 Kbytes Page:4 Pages

SISEMICShenzhen SI Semiconductors Co.,LTD.

深爱半导体深圳深爱半导体股份有限公司

封装/外壳:TO-220-3 包装:管件 描述:DIODE ARRAY SCHOTTKY 100V TO220 分立半导体产品 二极管 - 整流器 - 阵列

TSC

台湾半导体

封装/外壳:TO-220-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE ARRAY SCHOTTKY 100V TO220 分立半导体产品 二极管 - 整流器 - 阵列

ONSEMI

安森美半导体

10.0 AMPS. Schottky Barrier Rectifiers

文件:595.5 Kbytes Page:2 Pages

TSC

台湾半导体

10.0AMPS. Schottky Barrier Rectifiers

文件:195.43 Kbytes Page:2 Pages

TSC

台湾半导体

Schottky Barrier Diode in a TO-220 Plastic Package

文件:862.83 Kbytes Page:6 Pages

FOSHAN

蓝箭电子

10.0AMPS. Schottky Barrier Rectifiers Low power loss, high efficiency

文件:224.39 Kbytes Page:3 Pages

TSC

台湾半导体

Dual Common Cathode High Voltage Schottky Rectifier

文件:154.78 Kbytes Page:6 Pages

VishayVishay Siliconix

威世威世科技公司

Dual Common Cathode Schottky Rectifier

文件:207.43 Kbytes Page:4 Pages

TSC

台湾半导体

10.0 AMPS. Schottky Barrier Rectifiers

文件:595.5 Kbytes Page:2 Pages

TSC

台湾半导体

10.0AMPS. Schottky Barrier Rectifiers

文件:195.43 Kbytes Page:2 Pages

TSC

台湾半导体

10.0AMPS. Schottky Barrier Rectifiers Low power loss, high efficiency

文件:224.39 Kbytes Page:3 Pages

TSC

台湾半导体

Dual Common Cathode Schottky Rectifier

文件:207.43 Kbytes Page:4 Pages

TSC

台湾半导体

Dual Common Cathode Schottky Rectifier

文件:207.43 Kbytes Page:4 Pages

TSC

台湾半导体

Dual Common Cathode Schottky Rectifier

文件:207.43 Kbytes Page:4 Pages

TSC

台湾半导体

Dual Common Cathode Schottky Rectifier

文件:207.43 Kbytes Page:4 Pages

TSC

台湾半导体

10A Surface Mount Trench Schottky Rectifier

文件:473.96 Kbytes Page:3 Pages

CITC

竹懋科技

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

文件:134.12 Kbytes Page:6 Pages

GAMMA

10A SCHOTTKY RECTIFIER

文件:110.87 Kbytes Page:6 Pages

GAMMA

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

文件:120.32 Kbytes Page:6 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

SCHOTTKY BARRIER RECTIFIER

文件:278.5 Kbytes Page:5 Pages

RECTRON

丽正国际

MBR10H100产品属性

  • 类型

    描述

  • 型号

    MBR10H100

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    High Voltage Schottky Rectifiers

更新时间:2025-12-29 20:46:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TSC台半
20+
TO-220
38560
原装优势主营型号-可开原型号增税票
24+
NA/
1120
优势代理渠道,原装正品,可全系列订货开增值税票
ON
23+
TO-220
6800
只做原装正品假一赔十为客户做到零风险!!
Vishay Semiconductor Diodes Di
22+
TO220AC
9000
原厂渠道,现货配单
VISHAY/威世
21+
TO220
3945
Vishay(威世)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ON
TO-220
68500
一级代理 原装正品假一罚十价格优势长期供货
ST/ON/IR
22+
TO-220
12950
原装正品,实单请联系
ON
25+
TO-220AB
9800
百分百原装正品 真实公司现货库存 本公司只做原装 可
VISHAY
25+23+
TO220
11617
绝对原装正品全新进口深圳现货

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