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MBR10H100价格
参考价格：￥7.2346
型号：MBR10H100CT-E3/45 品牌：VIS 备注：这里有MBR10H100多少钱，2025年最近7天走势，今日出价，今日竞价，MBR10H100批发/采购报价，MBR10H100行情走势销售排行榜，MBR10H100报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MBR10H100 | High Voltage Schottky Rectifiers High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequenc | VishayVishay Siliconix 威世科技威世科技半导体 |   | |
MBR10H100 | High-Voltage Schottky Rectifier High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequenc | VishayVishay Siliconix 威世科技威世科技半导体 | | |
MBR10H100 | Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low voltage, high fr | KERSEMI | | |
MBR10H100 | High Voltage Schottky Rectifier FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) | VishayVishay Siliconix 威世科技威世科技半导体 | | |
MBR10H100 | High Voltage Schottky Rectifier 文件：141.65 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
High Voltage Schottky Rectifier FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dual Common Cathode High Voltage Schottky Rectifier FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
SCHOTTKY BARRIER RECTIFIERS Features High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std..(Halogen Free) Low stored charge majority carrier conduction | SUNMATE 森美特 | | ||
Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvo | KERSEMI | | ||
Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvo | KERSEMI | | ||
10.0AMP. Schottky Barrier Rectifiers Features ● Plastic material used carries Underwriters Laboratory Classifications 94V-0 ● Metal silicon junction, majority carrier conduction ● Low power loss, high efficiency ● High current capability, low forward voltage drop ● High surge capability ● For use in power supply – output rectif | LUGUANG 鲁光电子 | | ||
Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvo | KERSEMI | | ||
Dual High-Voltage Schottky Rectifiers Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
MBR10H100CT, MBRF10H100CT & MBRB10H100CT Series Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low vol | VAISH | | ||
10.0 AMPS. Schottky Barrier Rectifiers Features ● Plastic material used carries Underwriters Laboratory Classifications 94V-0 ● Metal silicon junction, majority carrier conduction ● Low power loss, high efficiency ● High current capability, low forward voltage drop ● High surge capability ● For use in power supply – output rectif | TSC 台湾半导体 | | ||
SWITCHMODE Power Rectifier 100 V, 10 A Features and Benefits • Low Forward Voltage: 0.61 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 10 A Total (5.0 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free Package is Available Applications • Power Supply − Outp | ONSEMI 安森美半导体 | | ||
Dual Common-Cathode High-Voltage Schottky Rectifier Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dual Common Cathode High Voltage Schottky Rectifier FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dual Common-Cathode High-Voltage Schottky Rectifier Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dual Common-Cathode High-Voltage Schottky Rectifier Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
SWITCHMODE Power Rectifier 100 V, 10 A Features and Benefits • Low Forward Voltage: 0.61 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 10 A Total (5.0 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free Package is Available Applications • Power Supply − Outp | ONSEMI 安森美半导体 | | ||
Dual Common-Cathode High-Voltage Schottky Rectifier Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dual Common-Cathode High-Voltage Schottky Rectifier Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High-Voltage Schottky Rectifier High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequenc | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High-Voltage Schottky Rectifier High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequenc | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High-Voltage Schottky Rectifier High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequenc | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High-Voltage Schottky Rectifier High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequenc | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
SCHOTTKY BARRIER RECTIFIER 文件：320.12 Kbytes Page：5 Pages | RECTRON 丽正国际 | | ||
封装/外壳：TO-220-3 包装：管件 描述：DIODE ARRAY SCHOTTKY 100V TO220 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | | |
封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY SCHOTTKY 100V TO220 分立半导体产品 二极管 - 整流器 - 阵列 | ONSEMI 安森美半导体 | | ||
Power Schottky Rectifier 文件：268.45 Kbytes Page：4 Pages | SISEMICShenzhen SI Semiconductors Co.,LTD. 深爱半导体深圳深爱半导体股份有限公司 | | ||
10.0 AMPS. Schottky Barrier Rectifiers 文件：595.5 Kbytes Page：2 Pages | TSC 台湾半导体 | | ||
10.0AMPS. Schottky Barrier Rectifiers 文件：195.43 Kbytes Page：2 Pages | TSC 台湾半导体 | | ||
Schottky Barrier Diode in a TO-220 Plastic Package 文件：862.83 Kbytes Page：6 Pages | FOSHAN 蓝箭电子 | | ||
10.0AMPS. Schottky Barrier Rectifiers Low power loss, high efficiency 文件：224.39 Kbytes Page：3 Pages | TSC 台湾半导体 | | ||
Dual Common Cathode High Voltage Schottky Rectifier 文件：154.78 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dual Common Cathode Schottky Rectifier 文件：207.43 Kbytes Page：4 Pages | TSC 台湾半导体 | | ||
10.0 AMPS. Schottky Barrier Rectifiers 文件：595.5 Kbytes Page：2 Pages | TSC 台湾半导体 | | ||
10.0AMPS. Schottky Barrier Rectifiers 文件：195.43 Kbytes Page：2 Pages | TSC 台湾半导体 | | ||
10.0AMPS. Schottky Barrier Rectifiers Low power loss, high efficiency 文件：224.39 Kbytes Page：3 Pages | TSC 台湾半导体 | | ||
Dual Common Cathode Schottky Rectifier 文件：207.43 Kbytes Page：4 Pages | TSC 台湾半导体 | | ||
Dual Common Cathode Schottky Rectifier 文件：207.43 Kbytes Page：4 Pages | TSC 台湾半导体 | | ||
Dual Common Cathode Schottky Rectifier 文件：207.43 Kbytes Page：4 Pages | TSC 台湾半导体 | | ||
Dual Common Cathode Schottky Rectifier 文件：207.43 Kbytes Page：4 Pages | TSC 台湾半导体 | | ||
10A Surface Mount Trench Schottky Rectifier 文件：473.96 Kbytes Page：3 Pages | CITC 竹懋科技 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：134.12 Kbytes Page：6 Pages | GAMMA GAMMA electronics | | ||
10A SCHOTTKY RECTIFIER 文件：110.87 Kbytes Page：6 Pages | GAMMA GAMMA electronics | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：120.32 Kbytes Page：6 Pages | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | | ||
SCHOTTKY BARRIER RECTIFIER 文件：278.5 Kbytes Page：5 Pages | RECTRON 丽正国际 | |
MBR10H100产品属性
- 类型
描述
- 型号
MBR10H100
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
High Voltage Schottky Rectifiers
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
2511 |
标准封装 |
8000 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
性 |
24+ |
NA/ |
1120 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ON/安森美 |
23+ |
D2PAK-3 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
VISHAY/威世 |
24+ |
TO220 |
9600 |
原装现货,优势供应,支持实单! |
|||
ON/安森美 |
23+ |
TO220 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
VISHAY/威世 |
22+ |
TO220 |
12000 |
只做原装、原厂优势渠道、假一赔十 |
|||
ON |
2015+ |
TO-2203 |
12500 |
全新原装,现货库存长期供应 |
|||
TSC台半 |
20+ |
TO-220 |
38560 |
原装优势主营型号-可开原型号增税票 |
|||
VISHAY/威世 |
2447 |
TO220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
VISHAY/威世 |
23+ |
TO-220 |
8000 |
只做原装现货 |
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2019-2-25
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