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MBR10H100CT价格
参考价格：￥7.2346
型号：MBR10H100CT-E3/45 品牌：VIS 备注：这里有MBR10H100CT多少钱，2026年最近7天走势，今日出价，今日竞价，MBR10H100CT批发/采购报价，MBR10H100CT行情走势销售排行榜，MBR10H100CT报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MBR10H100CT | MBR10H100CT, MBRF10H100CT & MBRB10H100CT Series Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low vol | VAISH 威世 |   | |
MBR10H100CT | SWITCHMODE Power Rectifier 100 V, 10 A Features and Benefits • Low Forward Voltage: 0.61 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 10 A Total (5.0 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free Package is Available Applications • Power Supply − Outp | ONSEMI 安森美半导体 | | |
MBR10H100CT | 10.0 AMPS. Schottky Barrier Rectifiers Features ● Plastic material used carries Underwriters Laboratory Classifications 94V-0 ● Metal silicon junction, majority carrier conduction ● Low power loss, high efficiency ● High current capability, low forward voltage drop ● High surge capability ● For use in power supply – output rectif | TSC 台湾半导体 | | |
MBR10H100CT | Dual Common-Cathode High-Voltage Schottky Rectifier Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H | VISHAYVishay Siliconix 威世威世科技公司 | | |
MBR10H100CT | Dual High-Voltage Schottky Rectifiers Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H | VISHAYVishay Siliconix 威世威世科技公司 | | |
MBR10H100CT | Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvo | KERSEMI | | |
MBR10H100CT | Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvo | KERSEMI | | |
MBR10H100CT | SCHOTTKY BARRIER RECTIFIERS Features High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std..(Halogen Free) Low stored charge majority carrier conduction | SUNMATE 森美特 | | |
MBR10H100CT | 10.0AMP. Schottky Barrier Rectifiers Features ● Plastic material used carries Underwriters Laboratory Classifications 94V-0 ● Metal silicon junction, majority carrier conduction ● Low power loss, high efficiency ● High current capability, low forward voltage drop ● High surge capability ● For use in power supply – output rectif | LUGUANG 鲁光电子 | | |
MBR10H100CT | Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvo | KERSEMI | | |
MBR10H100CT | Dual Common Cathode High Voltage Schottky Rectifier FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) | VISHAYVishay Siliconix 威世威世科技公司 | | |
MBR10H100CT | SWITCHMODE Power Rectifier 100 V, 10 A Features and Benefits • Low Forward Voltage: 0.61 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 10 A Total (5.0 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free Package is Available Applications • Power Supply − Ou | ONSEMI 安森美半导体 | | |
MBR10H100CT | 封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY SCHOTTKY 100V TO220 分立半导体产品 二极管 - 整流器 - 阵列 | ONSEMI 安森美半导体 | | |
MBR10H100CT | 10A, 100V, Schottky Rectifier | TSC 台湾半导体 | | |
MBR10H100CT | Dual Common Cathode High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance | VISHAYVishay Siliconix 威世威世科技公司 | | |
MBR10H100CT | Low IR Schottky Rectifier | ETC 知名厂家 | ETC | |
MBR10H100CT | Power Schottky Rectifier 文件：268.45 Kbytes Page：4 Pages | SISEMICShenzhen SI Semiconductors Co.,LTD. 深爱半导体深圳深爱半导体股份有限公司 | | |
MBR10H100CT | 封装/外壳：TO-220-3 包装：管件 描述：DIODE ARRAY SCHOTTKY 100V TO220 分立半导体产品 二极管 - 整流器 - 阵列 | TSC 台湾半导体 | | |
MBR10H100CT | Dual Common Cathode High Voltage Schottky Rectifier 文件：154.78 Kbytes Page：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
MBR10H100CT | Dual Common Cathode Schottky Rectifier 文件：207.43 Kbytes Page：4 Pages | TSC 台湾半导体 | | |
MBR10H100CT | 10.0AMPS. Schottky Barrier Rectifiers 文件：195.43 Kbytes Page：2 Pages | TSC 台湾半导体 | | |
MBR10H100CT | Schottky Barrier Diode in a TO-220 Plastic Package 文件：862.83 Kbytes Page：6 Pages | FOSHAN 蓝箭电子 | | |
MBR10H100CT | 10.0AMPS. Schottky Barrier Rectifiers Low power loss, high efficiency 文件：224.39 Kbytes Page：3 Pages | TSC 台湾半导体 | | |
MBR10H100CT | 10.0 AMPS. Schottky Barrier Rectifiers 文件：595.5 Kbytes Page：2 Pages | TSC 台湾半导体 | | |
Dual Common Cathode High Voltage Schottky Rectifier FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual Common-Cathode High-Voltage Schottky Rectifier Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual Common-Cathode High-Voltage Schottky Rectifier Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H | VISHAYVishay Siliconix 威世威世科技公司 | | ||
SWITCHMODE Power Rectifier 100 V, 10 A Features and Benefits • Low Forward Voltage: 0.61 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 10 A Total (5.0 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free Package is Available Applications • Power Supply − Outp | ONSEMI 安森美半导体 | | ||
SWITCHMODE Power Rectifier 100 V, 10 A Features and Benefits • Low Forward Voltage: 0.61 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 10 A Total (5.0 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free Package is Available Applications • Power Supply − Ou | ONSEMI 安森美半导体 | | ||
SWITCHMODE Power Rectifier 100 V, 10 A Features and Benefits • Low Forward Voltage: 0.61 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 10 A Total (5.0 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free Package is Available Applications • Power Supply − Ou | ONSEMI 安森美半导体 | | ||
SWITCHMODE Power Rectifier 100 V, 10 A Features and Benefits • Low Forward Voltage: 0.61 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 10 A Total (5.0 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free Package is Available Applications • Power Supply − Ou | ONSEMI 安森美半导体 | | ||
Dual Common-Cathode High-Voltage Schottky Rectifier Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual Common-Cathode High-Voltage Schottky Rectifier Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H | VISHAYVishay Siliconix 威世威世科技公司 | | ||
10.0 AMPS. Schottky Barrier Rectifiers 文件：595.5 Kbytes Page：2 Pages | TSC 台湾半导体 | | ||
10.0AMPS. Schottky Barrier Rectifiers 文件：195.43 Kbytes Page：2 Pages | TSC 台湾半导体 | | ||
10.0AMPS. Schottky Barrier Rectifiers Low power loss, high efficiency 文件：224.39 Kbytes Page：3 Pages | TSC 台湾半导体 | | ||
Dual Common Cathode Schottky Rectifier 文件：207.43 Kbytes Page：4 Pages | TSC 台湾半导体 | | ||
Dual Common Cathode Schottky Rectifier 文件：207.43 Kbytes Page：4 Pages | TSC 台湾半导体 | | ||
Dual Common Cathode Schottky Rectifier 文件：207.43 Kbytes Page：4 Pages | TSC 台湾半导体 | | ||
Dual Common Cathode Schottky Rectifier 文件：207.43 Kbytes Page：4 Pages | TSC 台湾半导体 | | ||
10A Surface Mount Trench Schottky Rectifier 文件：473.96 Kbytes Page：3 Pages | CITC 竹懋科技 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：134.12 Kbytes Page：6 Pages | GAMMA | | ||
10A SCHOTTKY RECTIFIER 文件：110.87 Kbytes Page：6 Pages | GAMMA | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：120.32 Kbytes Page：6 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
SCHOTTKY BARRIER RECTIFIER 文件：278.5 Kbytes Page：5 Pages | RECTRON 丽正国际 | |
MBR10H100CT产品属性
- 类型
描述
- 型号
MBR10H100CT
- 功能描述
肖特基二极管与整流器 10 Amp 100 Volt Dual
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
ON |
26+ |
TO-220AB |
6893 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
LT |
25+ |
TO-220 |
90000 |
一级代理商进口原装现货、假一罚十价格合理 |
|||
ON |
24+ |
TO-2203LEADSTANDA |
8866 |
||||
Vishay Semiconductor Diodes Di |
22+ |
TO220AC |
9000 |
原厂渠道,现货配单 |
|||
VISHAY/威世 |
24+ |
TO220 |
60000 |
全新原装现货 |
|||
VISHAY/威世 |
24+ |
TO220 |
9600 |
原装现货,优势供应,支持实单! |
|||
VISHAY/威世 |
24+ |
TO220 |
54000 |
郑重承诺只做原装进口现货 |
|||
ON/安森美 |
24+ |
30000 |
大批量供应优势库存热卖 |
||||
VISHAY |
1235+ |
TO-220 |
72 |
上传都是百分之百进口原装现货 |
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2019-2-25
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