MBR10H100CT价格

参考价格:¥7.2346

型号:MBR10H100CT-E3/45 品牌:VIS 备注:这里有MBR10H100CT多少钱,2025年最近7天走势,今日出价,今日竞价,MBR10H100CT批发/采购报价,MBR10H100CT行情走势销售排行榜,MBR10H100CT报价。
型号 功能描述 生产厂家&企业 LOGO 操作
MBR10H100CT

MBR10H100CT, MBRF10H100CT & MBRB10H100CT Series

Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low vol

VAISH

MBR10H100CT

SWITCHMODE Power Rectifier 100 V, 10 A

Features and Benefits • Low Forward Voltage: 0.61 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 10 A Total (5.0 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free Package is Available Applications • Power Supply − Outp

ONSEMI

安森美半导体

MBR10H100CT

10.0 AMPS. Schottky Barrier Rectifiers

Features ● Plastic material used carries Underwriters Laboratory Classifications 94V-0 ● Metal silicon junction, majority carrier conduction ● Low power loss, high efficiency ● High current capability, low forward voltage drop ● High surge capability ● For use in power supply – output rectif

TSC

台湾半导体

MBR10H100CT

Dual Common-Cathode High-Voltage Schottky Rectifier

Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H

VishayVishay Siliconix

威世科技威世科技半导体

MBR10H100CT

Dual High-Voltage Schottky Rectifiers

Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H

VishayVishay Siliconix

威世科技威世科技半导体

MBR10H100CT

Plastic package has Underwriters Laboratory Flammability Classification 94V-0

Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvo

KERSEMI

MBR10H100CT

Plastic package has Underwriters Laboratory Flammability Classification 94V-0

Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvo

KERSEMI

MBR10H100CT

10.0AMP. Schottky Barrier Rectifiers

Features ● Plastic material used carries Underwriters Laboratory Classifications 94V-0 ● Metal silicon junction, majority carrier conduction ● Low power loss, high efficiency ● High current capability, low forward voltage drop ● High surge capability ● For use in power supply – output rectif

LUGUANG

鲁光电子

MBR10H100CT

Plastic package has Underwriters Laboratory Flammability Classification 94V-0

Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvo

KERSEMI

MBR10H100CT

Dual Common Cathode High Voltage Schottky Rectifier

FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)

VishayVishay Siliconix

威世科技威世科技半导体

MBR10H100CT

SCHOTTKY BARRIER RECTIFIERS

Features  High efficiencty operation  Low power loss  High forward surge capability  Lead free in compliance with EU RoHS 2011/65/EU directive  Green molding compound as per IEC61249 Std..(Halogen Free)  Low stored charge majority carrier conduction

SUNMATE

森美特

MBR10H100CT

Dual Common Cathode High Voltage Schottky Rectifier

文件:154.78 Kbytes Page:6 Pages

VishayVishay Siliconix

威世科技威世科技半导体

MBR10H100CT

Dual Common Cathode Schottky Rectifier

文件:207.43 Kbytes Page:4 Pages

TSC

台湾半导体

MBR10H100CT

封装/外壳:TO-220-3 包装:管件 描述:DIODE ARRAY SCHOTTKY 100V TO220 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

MBR10H100CT

封装/外壳:TO-220-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE ARRAY SCHOTTKY 100V TO220 分立半导体产品 二极管 - 整流器 - 阵列

ONSEMI

安森美半导体

MBR10H100CT

Schottky Barrier Diode in a TO-220 Plastic Package

文件:862.83 Kbytes Page:6 Pages

FOSHAN

蓝箭电子

MBR10H100CT

10.0AMPS. Schottky Barrier Rectifiers Low power loss, high efficiency

文件:224.39 Kbytes Page:3 Pages

TSC

台湾半导体

MBR10H100CT

Power Schottky Rectifier

文件:268.45 Kbytes Page:4 Pages

SISEMICShenzhen SI Semiconductors Co.,LTD.

深爱半导体深圳深爱半导体股份有限公司

MBR10H100CT

10.0AMPS. Schottky Barrier Rectifiers

文件:195.43 Kbytes Page:2 Pages

TSC

台湾半导体

MBR10H100CT

10.0 AMPS. Schottky Barrier Rectifiers

文件:595.5 Kbytes Page:2 Pages

TSC

台湾半导体

Dual Common Cathode High Voltage Schottky Rectifier

FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)

VishayVishay Siliconix

威世科技威世科技半导体

Dual Common-Cathode High-Voltage Schottky Rectifier

Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H

VishayVishay Siliconix

威世科技威世科技半导体

Dual Common-Cathode High-Voltage Schottky Rectifier

Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H

VishayVishay Siliconix

威世科技威世科技半导体

SWITCHMODE Power Rectifier 100 V, 10 A

Features and Benefits • Low Forward Voltage: 0.61 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 10 A Total (5.0 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free Package is Available Applications • Power Supply − Outp

ONSEMI

安森美半导体

Dual Common-Cathode High-Voltage Schottky Rectifier

Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H

VishayVishay Siliconix

威世科技威世科技半导体

Dual Common-Cathode High-Voltage Schottky Rectifier

Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H

VishayVishay Siliconix

威世科技威世科技半导体

10.0 AMPS. Schottky Barrier Rectifiers

文件:595.5 Kbytes Page:2 Pages

TSC

台湾半导体

10.0AMPS. Schottky Barrier Rectifiers

文件:195.43 Kbytes Page:2 Pages

TSC

台湾半导体

10.0AMPS. Schottky Barrier Rectifiers Low power loss, high efficiency

文件:224.39 Kbytes Page:3 Pages

TSC

台湾半导体

Dual Common Cathode Schottky Rectifier

文件:207.43 Kbytes Page:4 Pages

TSC

台湾半导体

Dual Common Cathode Schottky Rectifier

文件:207.43 Kbytes Page:4 Pages

TSC

台湾半导体

Dual Common Cathode Schottky Rectifier

文件:207.43 Kbytes Page:4 Pages

TSC

台湾半导体

Dual Common Cathode Schottky Rectifier

文件:207.43 Kbytes Page:4 Pages

TSC

台湾半导体

10A Surface Mount Trench Schottky Rectifier

文件:473.96 Kbytes Page:3 Pages

CITC

竹懋科技

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

文件:134.12 Kbytes Page:6 Pages

GAMMA

GAMMA electronics

10A SCHOTTKY RECTIFIER

文件:110.87 Kbytes Page:6 Pages

GAMMA

GAMMA electronics

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

文件:120.32 Kbytes Page:6 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

SCHOTTKY BARRIER RECTIFIER

文件:278.5 Kbytes Page:5 Pages

RECTRON

丽正国际

MBR10H100CT产品属性

  • 类型

    描述

  • 型号

    MBR10H100CT

  • 功能描述

    肖特基二极管与整流器 10 Amp 100 Volt Dual

  • RoHS

  • 制造商

    Skyworks Solutions, Inc.

  • 产品

    Schottky Diodes

  • 峰值反向电压

    2 V

  • 正向连续电流

    50 mA

  • 配置

    Crossover Quad

  • 正向电压下降

    370 mV

  • 最大功率耗散

    75 mW

  • 工作温度范围

    - 65 C to + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOT-143

  • 封装

    Reel

更新时间:2025-8-16 12:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON(安森美)
2511
标准封装
8000
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
24+
NA/
10
优势代理渠道,原装正品,可全系列订货开增值税票
TSC/台湾半导体
2022+
TO-220
30000
进口原装现货供应,原装 假一罚十
ON
2015+
TO-2203
12500
全新原装,现货库存长期供应
TSC台半
20+
TO-220
38560
原装优势主营型号-可开原型号增税票
VISHAY/威世
23+
TO-220
8000
只做原装现货
中性
23+
TO220-3
50000
全新原装正品现货,支持订货
ON/安森美
25+
电联咨询
7800
公司现货,提供拆样技术支持
TSC
17+
TO-220
6200
ON Semiconductor
22+
TO220AB
9000
原厂渠道,现货配单

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