SINGLE-CHIP DUAL PROSLIC®

Si32260/1 Features  Two complete FXS channels in a single 6 x 8 mm or 8 x 8 mm package  Performs all BORSCHT functions  Ideal for short- or long-loop applications  Ultra low power consumption  Internal balanced or unbalanced ringing  Patented low power ringing  Adaptive ringing  S

N-Channel 100 V (D-S) MOSFET

文件：1.00826 Mbytes Page：9 Pages

N-Channel Power Trench짰 MOSFET 150 V, 2.3 A, 144 m廓

文件：301.54 Kbytes Page：7 Pages

N-Channel Power Trench짰 MOSFET 150 V, 9.4 A, 134 m廓

文件：324.51 Kbytes Page：7 Pages

N-Channel Power Trench MOSFET

文件：239.46 Kbytes Page：6 Pages