SINGLE-CHIP DUAL PROSLIC®

Si32260/1 Features  Two complete FXS channels in a single 6 x 8 mm or 8 x 8 mm package  Performs all BORSCHT functions  Ideal for short- or long-loop applications  Ultra low power consumption  Internal balanced or unbalanced ringing  Patented low power ringing  Adaptive ringing  S

PROSLIC® SINGLE-CHIP FXS SOLUTION

Si3217x-C Features  Complete FXS solution in 5 x 7 mm  Performs all BORSCHT functions  Ideal for short to medium loops  Global programmability  Internal balanced or unbalanced ringing  Patented low power ringing  Simplified configuration and diagnostics  Supported by ProSLIC API

150V N沟道Power Trench® MOSFET

这一N沟道MOSFET器件采用飞兆半导体的高级PowerTrench®工艺生产，该工艺专为实现rDS(on)、开关性能以及坚固性而优化。 •VGS = 10 V且ID = 2.8A时，最大rDS(on) = 128 mΩ \n•VGS = 6 V且ID = 2.4A时，最大rDS(on) = 178 mΩ \n•高性能沟道技术可实现极低的rDS(on)\n•在广泛使用的表面贴装封装中可实现高功率和高电流处理能力\n•快速开关速度\n•100%经过UIL测试\n•符合RoHS标准;

N-Channel Enhancement MOSFET

文件：2.091719 Mbytes Page：5 Pages

N-Channel Power Trench MOSFET

文件：239.46 Kbytes Page：6 Pages

N-Channel Power Trench짰 MOSFET 150 V, 2.3 A, 144 m廓

文件：301.54 Kbytes Page：7 Pages

N-Channel 100 V (D-S) MOSFET

文件：1.00826 Mbytes Page：9 Pages

N-Channel Power Trench짰 MOSFET 150 V, 9.4 A, 134 m廓

文件：324.51 Kbytes Page：7 Pages