100VN-ChannelMOSFET

Features ShieldedGateMOSFETTechnology HBMESDprotectionlevel>6kVtypical(Note4) HighperformancetrenchtechnologyforextremelylowRDS(on) Highpowerandcurrenthandlingcapabilityinawidelyused surfacemountpackage VDS=100V ID(atVGS=10V)4.2A RDS(ON)(atVGS=10V)

100VN-ChannelMOSFET

Features ShieldedGateMOSFETTechnology HBMESDprotectionlevel>6kVtypical(Note4) HighperformancetrenchtechnologyforextremelylowRDS(on) Highpowerandcurrenthandlingcapabilityinawidelyused surfacemountpackage VDS=100V ID(atVGS=10V)4.2A RDS(ON)(atVGS=10V)

N-channelEnhancementModePowerMOSFET

Features VDS=100V,ID=18.1A RDS(ON)

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=5.5A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=104mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

N-ChannelShieldedGatePowerTrench짰MOSFET100V,5.5A,104m廓

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