isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=5.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 104mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

丝印代码：FDD86113；100V N-Channel MOSFET

Features Shielded Gate MOSFET Technology HBM ESD protection level > 6 kV typical (Note 4) High performance trench technology for extremely low RDS(on) High power and current handling capability in a widely used surface mount package VDS =100V ID(at VGS=10V)4.2A RDS(ON) (at VGS=10V)

N-channel Enhancement Mode Power MOSFET

Features  VDS= 100V, ID= 18.1 A RDS(ON)

N 沟道，屏蔽门极，PowerTrench® MOSFET，100V，5.5 A，104 mΩ

这一N沟道逻辑电平MOSFET器件采用飞兆半导体先进的PowerTrench®工艺生产，这一先进工艺是专为最大限度地降低导通阻抗并保持卓越开关性能而定制的。 旨在为增强ESD电压电平而增加了G-S齐纳管。 • Shielded Gate MOSFET Technology\n• Max rDS(on) = 104 mΩ at VGS = 10 V, ID = 4.2 A\n• Max rDS(on) = 156 mΩ at VGS = 4.5 V, ID = 3.4 A\n• HBM SD Protection Level > 6 kV typical (Note 4)\n• High Performance Trench Technology for Extremely Low rDS(on)\n• High Power and Current Handling Capability in a;

N-Channel Shielded Gate PowerTrench짰 MOSFET 100 V, 5.5 A, 104 m廓

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100V N-Channel MOSFET

Features Shielded Gate MOSFET Technology HBM ESD protection level > 6 kV typical (Note 4) High performance trench technology for extremely low RDS(on) High power and current handling capability in a widely used surface mount package VDS =100V ID(at VGS=10V)4.2A RDS(ON) (at VGS=10V)

N-Channel PowerTrench짰 MOSFET 100 V, 3.3 A, 100 m

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N-Channel 100-V (D-S) MOSFET

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