Full-Featured uP Supervisory Circuit with /-1.5 Reset Accuracy

General Description The MAX807 microprocessor (µP) supervisory circuit reduces the complexity and number of components needed to monitor power-supply and battery-control functions in µP systems. A 70µA supply current makes the MAX807 ideal for use in portable equipment, while a 2ns chip-enable pr

Full-Featured uP Supervisory Circuit with /-1.5 Reset Accuracy

General Description The MAX807 microprocessor (µP) supervisory circuit reduces the complexity and number of components needed to monitor power-supply and battery-control functions in µP systems. A 70µA supply current makes the MAX807 ideal for use in portable equipment, while a 2ns chip-enable pr

Full-Featured uP Supervisory Circuit with /-1.5 Reset Accuracy

General Description The MAX807 microprocessor (µP) supervisory circuit reduces the complexity and number of components needed to monitor power-supply and battery-control functions in µP systems. A 70µA supply current makes the MAX807 ideal for use in portable equipment, while a 2ns chip-enable pr

包装：管件 描述：IC SUPERVISOR MPU 16-DIP 集成电路（IC） 监控器

封装/外壳：16-DIP（0.300"，7.62mm） 包装：卷带（TR） 描述：IC SUPERVISOR 1 CHANNEL 16DIP 集成电路（IC） 监控器

POWER TRANSISTORS(8.0A,150-200V,60W)

Single Element Detector

Element size 1,5x1,5 Thermally compensated option Designed for Gas Analysis applications The LHi 807 pyroelectric infrared-detector series is specially designed for gas analysis and monitorring applications . It includes pyroelectric element with FET in source follower connection and is avaliab

Integrated Circuit TV Sound Channel, 1W

Description: The NTE807 is a complete 1Watt sound channel in a 16–Lead DIP type package and is ideally suited for use in small screen TV or mobile FM radios. This device operates from a single 14V supply and provides VCC/2 output tracking as well as greater than 20dB of ripple rejection. The NTE8

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5179)

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5179)