Single-Chip, 8-Bit CCD Digitizer with Clamp and 6-Bit PGA

General Description The MAX1101 is a highly integrated IC designed primarily for digitizing the output of a linear CCD array. It provides the components required for all necessary analog functions, including clamp circuitry for black level correction or correlated double sampling (CDS), a three-i

Single-Chip, 8-Bit CCD Digitizer with Clamp and 6-Bit PGA

Automatic RF MESFET Amplifier Drain-Current Controllers

General Description The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A MESFET amplifier operation

Automatic RF MESFET Amplifier Drain-Current Controllers

General Description The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A MESFET amplifier operation

Automatic RF MESFET Amplifier Drain-Current Controllers

General Description The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A MESFET amplifier operation

RF MESFET放大器漏极电流自动控制器

MAX11014/MAX11015设置和控制双路MESFET功率器件的偏置状态，用于点对点通信或其他微波基站。MAX11014集成有两路完整的闭环模拟漏极电流控制器，用于工作在A类放大器的MESFET，而MAX11015针对AB类工作。这两种器件都集成有SRAM查找表(LUT)，用于保存温度和漏极电流补偿数据。\n 每种器件都包含两个高边电流监测放大器，以监测MESFET的漏极电流在取样电阻上的压降，其范围为0至625mV。外部采用二极管连接的晶体管用于监测MESFET的温度，内部温度传感器监测MAX11014/MAX11015管芯的本地温度。内部DAC通过控制栅极电压来设置电流取样电阻上的压 \n• 双通道漏极电流检测放大器 \n• 预设增益为4 \n• 在75mV至625mV检测电压范围内精度为±0.5% (MAX11014) \n• 取样电阻共模电压范围 \n• 0.5V至11V (MAX11014) \n• 5V至32V (MAX11015) \n• 低噪声栅极偏置输出，具备±10mA栅极驱动能力 \n• 快速嵌位和上电复位 \n• 12位DAC控制MESFET栅极电压 \n• 内部温度传感器/双通道外部温度传感器 \n• 内部12位ADC测量温度和电压 \n• 可通过引脚选择串行接口 \n• 3.4MHz I²C兼容接口 \n• 20MHz SPI/MICROWIR;

Automatic RF MESFET Amplifier Drain-Current Controllers

General Description The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A MESFET amplifier operation

1.5Msps、10位、低功耗SAR ADC，并行接口

The MAX11019 is a 1.5Msps, low-power, 8-channel, 10-bit SAR ADC with a parallel interface. It features software-selectable, 8 single-ended or 4 true-differential inputs. It also includes an internal oscillator to control conversion timing and an internal +4.096V reference. \n• Excellent DC Performance: ±1 LSB INL, ±1 LSB DNL \n• 5MHz Full-Power Linear Bandwidth \n• Programmable Unipolar or Bipolar Input Range \n• 24MHz Parallel Interface \n• Separate VL Supply Seamless Interface to +1.8V DVDD Digital Logic \n• Low Supply CurrentTBDmA (1.5Msps)TBDmA (100ksps)TBDµ;

Single-Chip, 8-Bit CCD Digitizer with Clamp and 6-Bit PGA

General Description The MAX1101 is a highly integrated IC designed primarily for digitizing the output of a linear CCD array. It provides the components required for all necessary analog functions, including clamp circuitry for black level correction or correlated double sampling (CDS), a three-i

Automatic RF MESFET Amplifier Drain-Current Controllers

文件：657.89 Kbytes Page：70 Pages

Automatic RF MESFET Amplifier Drain-Current Controllers

文件：657.89 Kbytes Page：70 Pages

Automatic RF MESFET Amplifier Drain-Current Controllers

文件：657.89 Kbytes Page：70 Pages

包装：盒 描述：IC RF MESFET AMP 48TQFN RF/IF，射频/中频和 RFID RF 其它 IC 和模块

Automatic RF MESFET Amplifier Drain-Current Controllers

文件：657.89 Kbytes Page：70 Pages

Automatic RF MESFET Amplifier Drain-Current Controllers

文件：657.89 Kbytes Page：70 Pages

封装/外壳：24-SOIC（0.295"，7.50mm 宽） 包装：管件 描述：IC AFE CCD DIGITZR 8BIT 24SOIC 集成电路（IC） 模拟前端（AFE）

N-channel dual-gate MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1101, BF1101R and BF1101WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

N-channel dual-gate MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1101, BF1101R and BF1101WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

Integrated Circuit General Purpose Amp, Mixer, and Oscillator

Features: • General Amplifier Circuit • High Frequency Amplifier • Mixer, OSC and Modulator • Video Amplifier • Recommend RF and IF Amplifier (f = 0 to 100MHz) • AGC is possible

Universal sync generator USG

GENERAL DESCRIPTION The SAA1101 is a Universal Sync Generator (USG) and is designed for application in video sources such as cameras, film scanners, video generators and associated apparatus. The circuit can be considered as a successor to the SAA1043 sync generator and the SAA1044 subcarrier cou

WIDE BAND AGC AMPLIFIER GaAs MMIC

文件：337.64 Kbytes Page：15 Pages