Automatic RF MESFET Amplifier Drain-Current Controllers

General Description The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A MESFET amplifier operation

RF MESFET放大器漏极电流自动控制器

MAX11014/MAX11015设置和控制双路MESFET功率器件的偏置状态，用于点对点通信或其他微波基站。MAX11014集成有两路完整的闭环模拟漏极电流控制器，用于工作在A类放大器的MESFET，而MAX11015针对AB类工作。这两种器件都集成有SRAM查找表(LUT)，用于保存温度和漏极电流补偿数据。\n 每种器件都包含两个高边电流监测放大器，以监测MESFET的漏极电流在取样电阻上的压降，其范围为0至625mV。外部采用二极管连接的晶体管用于监测MESFET的温度，内部温度传感器监测MAX11014/MAX11015管芯的本地温度。内部DAC通过控制栅极电压来设置电流取样电阻上的压 \n• 双通道漏极电流检测放大器 \n• 预设增益为4 \n• 在75mV至625mV检测电压范围内精度为±0.5% (MAX11014) \n• 取样电阻共模电压范围 \n• 0.5V至11V (MAX11014) \n• 5V至32V (MAX11015) \n• 低噪声栅极偏置输出，具备±10mA栅极驱动能力 \n• 快速嵌位和上电复位 \n• 12位DAC控制MESFET栅极电压 \n• 内部温度传感器/双通道外部温度传感器 \n• 内部12位ADC测量温度和电压 \n• 可通过引脚选择串行接口 \n• 3.4MHz I²C兼容接口 \n• 20MHz SPI/MICROWIR;

Automatic RF MESFET Amplifier Drain-Current Controllers

文件：657.89 Kbytes Page：70 Pages

Automatic RF MESFET Amplifier Drain-Current Controllers

General Description The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A MESFET amplifier operation

Automatic RF MESFET Amplifier Drain-Current Controllers

文件：657.89 Kbytes Page：70 Pages

Automatic RF MESFET Amplifier Drain-Current Controllers

文件：657.89 Kbytes Page：70 Pages

封装/外壳：48-WFQFN 裸露焊盘 功能：RF MESFET 放大器漏极电流控制器 包装：卷带（TR） 描述：IC RF MESFET AMP 48TQFN RF/IF，射频/中频和 RFID RF 其它 IC 和模块

包装：盒 描述：IC RF MESFET AMP 48TQFN RF/IF，射频/中频和 RFID RF 其它 IC 和模块

POWER TRANSISTORS(30A,60-120V,200W)

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . .designed for use as output devices in complementary general purpose amplifier applications. • High Gain Darlington Performance • High DC Current Gain hFE= 1000 (Min) @ IC = 20 A • Monolithic Construction with Built−in Base Emitter Shun

DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON

High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 (Min) @ IC – 20 Adc • Monolithic Construction with Built–in Base Emitter Shunt Resistor • Junction Temperature to +200°C

30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS

High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain - hFE= 1000 (Min) @ IC −20 Adc • Monolithic Construction with Built−in Base Emitter Shunt Resistor • Junction Temperature to +200C

NPN SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)

SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS

FLAT-BASE TYPE INSULATED TYPE

INTEGRATED FUNCTIONS AND FEATURES • Converter bridge for 3 phase AC-to-DC power conversion. • Circuit for dynamic braking of motor regenerative energy. • 3-phase IGBT inverter bridge configured by the latest 3rd. generation IGBT and diode technology. • Inverter output current capability IO (No