Automatic RF MESFET Amplifier Drain-Current Controllers

General Description The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A MESFET amplifier operation

RF MESFET放大器漏极电流自动控制器

MAX11014/MAX11015设置和控制双路MESFET功率器件的偏置状态，用于点对点通信或其他微波基站。MAX11014集成有两路完整的闭环模拟漏极电流控制器，用于工作在A类放大器的MESFET，而MAX11015针对AB类工作。这两种器件都集成有SRAM查找表(LUT)，用于保存温度和漏极电流补偿数据。\n 每种器件都包含两个高边电流监测放大器，以监测MESFET的漏极电流在取样电阻上的压降，其范围为0至625mV。外部采用二极管连接的晶体管用于监测MESFET的温度，内部温度传感器监测MAX11014/MAX11015管芯的本地温度。内部DAC通过控制栅极电压来设置电流取样电阻上的压 \n• 双通道漏极电流检测放大器 \n• 预设增益为4 \n• 在75mV至625mV检测电压范围内精度为±0.5% (MAX11014) \n• 取样电阻共模电压范围 \n• 0.5V至11V (MAX11014) \n• 5V至32V (MAX11015) \n• 低噪声栅极偏置输出，具备±10mA栅极驱动能力 \n• 快速嵌位和上电复位 \n• 12位DAC控制MESFET栅极电压 \n• 内部温度传感器/双通道外部温度传感器 \n• 内部12位ADC测量温度和电压 \n• 可通过引脚选择串行接口 \n• 3.4MHz I²C兼容接口 \n• 20MHz SPI/MICROWIR;

Automatic RF MESFET Amplifier Drain-Current Controllers

文件：657.89 Kbytes Page：70 Pages

Automatic RF MESFET Amplifier Drain-Current Controllers

General Description The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A MESFET amplifier operation

Automatic RF MESFET Amplifier Drain-Current Controllers

文件：657.89 Kbytes Page：70 Pages

PNP SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)

PNP SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS

POWER TRANSISTORS(30A,60-120V,200W)

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . .designed for use as output devices in complementary general purpose amplifier applications. • High Gain Darlington Performance • High DC Current Gain hFE= 1000 (Min) @ IC = 20 A • Monolithic Construction with Built−in Base Emitter Shun

30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS

High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain - hFE= 1000 (Min) @ IC −20 Adc • Monolithic Construction with Built−in Base Emitter Shunt Resistor • Junction Temperature to +200C

DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON

High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 (Min) @ IC – 20 Adc • Monolithic Construction with Built–in Base Emitter Shunt Resistor • Junction Temperature to +200°C

FLAT-BASE TYPE INSULATED TYPE

INTEGRATED FUNCTIONS AND FEATURES • Converter bridge for 3 phase AC-to-DC power conversion. • Circuit for dynamic braking of motor regenerative energy. • 3-phase IGBT inverter bridge configured by the latest 3rd. generation IGBT and diode technology. • Inverter output current capability IO (No