1W, High Isolation SIP, Single & Dual Output DC/DC Converters

Minmaxs MAU200 1W DC/DCs are specially designed to provide high levels of isolation 3000VDC in a miniature SIP package. Key Features • Efficiency up to 81 • 3000VDC Isolation • MTBF > 2,000,000 Hours • Low Cost • Input 5, 12 and 24VDC • Output 3.3,5,9,12,15,{5,{9,{12 and {15VDC • Temp

MAU200 Series 1 Watt Ultra Miniature High Isolation SIP DC/DC Single & Dual Output

Key Features ● SMT Technology ● Miniture Package ● I/O Isolation 3000 VDC ● Efficiency Up To 81 ● MTBF > 2,000,000 Hours ● Low Cost

1 Watt Miniature SIP High Isolation DC/DC Converter

The MINMAX MAU200 series is a range of 1W DC-DC converters in a small SIP Package featuring high I/O isolation of 3000VDC. An excellent efficiency allows an operating temperature range of –40℃ to +90℃. These converters offer an economical solution for many applications where a voltage has to be isol • \n\n• 工业标准SIP-7包装\n\n• 无稳压输出\n\n• 隔离耐压3000VDC\n\n• 工作环境温度范围 : -40℃至+90℃\n\n• 符合国际安规UL/cUL/IEC/EN 60950-1认证;

DC/DC CONVERTER 1W,SIP-Package

SIP Package with Industry Standard Pinout

文件：462.08 Kbytes Page：4 Pages

DC/DC CONVERTER 1W SIP Package with Industry Standard Pinout

文件：527.21 Kbytes Page：4 Pages

DC/DC CONVERTER 1W, SIP-Package, High Isolation

文件：647.53 Kbytes Page：4 Pages

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching

POWER TRANSISTORS(2.5A,1300-1500V,36W)

HORIZONTAL DEFLECTION TRANSISTOR 2.5 AMPERE POWER TRANSISTORS 1300-1500 VOLTS 36 WATTS

SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounti

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.

Alternate Source/ Second Source Photodiodes

PRODUCT DESCRIPTION Large area planar silicon photodiode in a waterclear, cast epoxy sidelooker, similar in outline to the TO-92 package. These diodes exhibit low dark current under reverse bias and fast speed of response.