MACOM PRISM™ MATP-10025 device: 100 Gbps PAM-4 PHY with integrated DSP and multiplexing functionality

Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs

Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Cissand Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body

Nylon PCB Supports - Imperial Spacing

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1.00mm PITCH CONNECTOR

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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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