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型号 功能描述 生产厂家 企业 LOGO 操作
10025HR

1.00mm PITCH CONNECTOR

文件:429.78 Kbytes Page:1 Pages

YEONHO

然湖

1.00mm P1TCH CONNECTOR

文件:2.01859 Mbytes Page:1 Pages

YEONHO

然湖

1.00mm P1TCH CONNECTOR

文件:2.01859 Mbytes Page:1 Pages

YEONHO

然湖

1.00mm P1TCH CONNECTOR

文件:2.01859 Mbytes Page:1 Pages

YEONHO

然湖

1.00mm P1TCH CONNECTOR

文件:2.01859 Mbytes Page:1 Pages

YEONHO

然湖

1.00mm P1TCH CONNECTOR

文件:2.01859 Mbytes Page:1 Pages

YEONHO

然湖

1.00mm P1TCH CONNECTOR

文件:2.01859 Mbytes Page:1 Pages

YEONHO

然湖

1.00mm P1TCH CONNECTOR

文件:2.01859 Mbytes Page:1 Pages

YEONHO

然湖

1.00mm P1TCH CONNECTOR

文件:2.01859 Mbytes Page:1 Pages

YEONHO

然湖

1.00mm P1TCH CONNECTOR

文件:2.01859 Mbytes Page:1 Pages

YEONHO

然湖

1.00mm P1TCH CONNECTOR

文件:2.01859 Mbytes Page:1 Pages

YEONHO

然湖

1.00mm P1TCH CONNECTOR

文件:2.01859 Mbytes Page:1 Pages

YEONHO

然湖

1.00mm P1TCH CONNECTOR

文件:2.01859 Mbytes Page:1 Pages

YEONHO

然湖

1.00mm P1TCH CONNECTOR

文件:2.01859 Mbytes Page:1 Pages

YEONHO

然湖

1.00mm P1TCH CONNECTOR

文件:2.01859 Mbytes Page:1 Pages

YEONHO

然湖

1.00mm P1TCH CONNECTOR

文件:2.01859 Mbytes Page:1 Pages

YEONHO

然湖

1.00mm P1TCH CONNECTOR

文件:2.01859 Mbytes Page:1 Pages

YEONHO

然湖

Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs

Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Cissand Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally

ADPOW

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body

ADPOW

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching

ADPOW

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching

ADPOW

POWER TRANSISTORS(20A,750-850V,250W)

SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE The MJ10024 and MJ10025 dartington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line oper -ated

MOSPEC

统懋

10025HR产品属性

  • 类型

    描述

  • 型号

    10025HR

  • 制造商

    YEONHO

  • 制造商全称

    YEONHO ELECTRONICS

  • 功能描述

    1.00mm PITCH CONNECTOR

更新时间:2026-7-23 14:13:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HRS
20+
SMD
32970
原装优势主营型号-可开原型号增税票
HIROSE/广濑
25+
SMD
90000
全新原装现货
HIROSE/广濑
2026+
SMD
54648
百分百原装现货 实单必成 欢迎询价
YEONHO
2450+
4PIN
8540
只做原装正品假一赔十为客户做到零风险!!
HIROSE/广濑
25+
SMD
20000
本公司 只做全新原装正品
YEONHOELECTRONICS
2022+
8
全新原装 货期两周
HIROSE
11+
SMD
1869
全新 发货1-2天

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