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型号 功能描述 生产厂家 企业 LOGO 操作
10025HR

1.00mm PITCH CONNECTOR

文件:429.78 Kbytes Page:1 Pages

YEONHO

然湖

1.00mm P1TCH CONNECTOR

文件:2.01859 Mbytes Page:1 Pages

YEONHO

然湖

1.00mm P1TCH CONNECTOR

文件:2.01859 Mbytes Page:1 Pages

YEONHO

然湖

1.00mm P1TCH CONNECTOR

文件:2.01859 Mbytes Page:1 Pages

YEONHO

然湖

1.00mm P1TCH CONNECTOR

文件:2.01859 Mbytes Page:1 Pages

YEONHO

然湖

1.00mm P1TCH CONNECTOR

文件:2.01859 Mbytes Page:1 Pages

YEONHO

然湖

1.00mm P1TCH CONNECTOR

文件:2.01859 Mbytes Page:1 Pages

YEONHO

然湖

1.00mm P1TCH CONNECTOR

文件:2.01859 Mbytes Page:1 Pages

YEONHO

然湖

1.00mm P1TCH CONNECTOR

文件:2.01859 Mbytes Page:1 Pages

YEONHO

然湖

1.00mm P1TCH CONNECTOR

文件:2.01859 Mbytes Page:1 Pages

YEONHO

然湖

1.00mm P1TCH CONNECTOR

文件:2.01859 Mbytes Page:1 Pages

YEONHO

然湖

1.00mm P1TCH CONNECTOR

文件:2.01859 Mbytes Page:1 Pages

YEONHO

然湖

1.00mm P1TCH CONNECTOR

文件:2.01859 Mbytes Page:1 Pages

YEONHO

然湖

1.00mm P1TCH CONNECTOR

文件:2.01859 Mbytes Page:1 Pages

YEONHO

然湖

1.00mm P1TCH CONNECTOR

文件:2.01859 Mbytes Page:1 Pages

YEONHO

然湖

1.00mm P1TCH CONNECTOR

文件:2.01859 Mbytes Page:1 Pages

YEONHO

然湖

1.00mm P1TCH CONNECTOR

文件:2.01859 Mbytes Page:1 Pages

YEONHO

然湖

Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs

Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Cissand Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally

ADPOW

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body

ADPOW

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching

ADPOW

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching

ADPOW

POWER TRANSISTORS(20A,750-850V,250W)

SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE The MJ10024 and MJ10025 dartington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line oper -ated

MOSPEC

统懋

10025HR产品属性

  • 类型

    描述

  • 型号

    10025HR

  • 制造商

    YEONHO

  • 制造商全称

    YEONHO ELECTRONICS

  • 功能描述

    1.00mm PITCH CONNECTOR

更新时间:2026-5-14 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HIROSE/广濑
2026+
SMD
54648
百分百原装现货 实单必成 欢迎询价
HRS
20+
SMD
32970
原装优势主营型号-可开原型号增税票
YEONHO
2450+
4PIN
8540
只做原装正品假一赔十为客户做到零风险!!
KOST
25+
12000
原装进口支持检测
AMPHENOL/安费诺
2608+
/
470984
一级代理,原装现货
Amphenol/安费诺
24+
10277
原厂现货渠道
SUPERIOR WASHER & GASKET
25+
55
公司优势库存 热卖中!
HIROSE
11+
SMD
1869
全新 发货1-2天
ERICSSON
17+
SOP-8
6200
100%原装正品现货
AMPHENOL/安费诺
26+
NA
360000
原装,请来电咨询

10025HR数据表相关新闻