High power density 600V half-bridge driver with two enhancement mode GaN Power HEMT

Features • 600 V system-in-package integrating half-bridge gate driver and high-voltage GaN power transistors: – QFN 9 x 9 x 1 mm package – RDS(ON) = 225 mΩ – IDS(MAX) = 6.5 A • Reverse current capability • Zero reverse recovery loss • UVLO protection on low-side and high-side • Internal

封装/外壳：31-VQFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：HIGH POWER DENSITY 600V HALF BRI 集成电路（IC） 全半桥驱动器

High power density 600V half-bridge driver with two enhancement mode GaN HEMTs

High power density 600V half-bridge driver with two enhancement mode GaN Power HEMT

Features • 600 V system-in-package integrating half-bridge gate driver and high-voltage GaN power transistors: – QFN 9 x 9 x 1 mm package – RDS(ON) = 225 mΩ – IDS(MAX) = 6.5 A • Reverse current capability • Zero reverse recovery loss • UVLO protection on low-side and high-side • Internal

600 V half-bridge enhancement mode GaN HEMT with high voltage driver