Features

• 600 V system-in-package integrating half-bridge gate driver and high-voltage

GaN power transistors:

– QFN 9 x 9 x 1 mm package

– RDS(ON) = 225 mΩ

– IDS(MAX) = 6.5 A

• Reverse current capability

• Zero reverse recovery loss

• UVLO protection on low-side and high-side

• Internal bootstrap diode

• Interlocking function

• Dedicated pin for shutdown functionality

• Accurate internal timing match

• 3.3 V to 15 V compatible inputs with hysteresis and pull-down

• Overtemperature protection

• Bill of material reduction

• Very compact and simplified layout

• Flexible, easy and fast design.

Application

• Switch-mode power supplies

• Chargers and adapters

• High-voltage PFC, DC-DC and DC-AC converters