High power density 600V half-bridge driver with two enhancement mode GaN Power HEMT

Features • 600 V system-in-package integrating half-bridge gate driver and high-voltage GaN power transistors: – QFN 9 x 9 x 1 mm package – RDS(ON) = 225 mΩ – IDS(MAX) = 6.5 A • Reverse current capability • Zero reverse recovery loss • UVLO protection on low-side and high-side • Internal