位置：首页 > IC中文资料第6185页 > M6MG
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY DESCRIPTION TheMITSUBISHIM6MGB/T160S2BVPisaStackedMultiChipPackage(S-MCP)thatcontents16M-bitsflashmemoryand2M-bitsStaticRAMina48-pinTSOP(TYPE-I). FEATURES •Accesstime FlashMemory90ns(Max.) S | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 |  |   | |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY DESCRIPTION TheMITSUBISHIM6MGB/T160S4BVPisaStackedMultiChipPackage(S-MCP)thatcontents16M-bitsflashmemoryand4M-bitsStaticRAMina48-pinTSOP(TYPE-I). 16M-bitsFlashmemoryisa2097152bytes/1048576words3.3V-only,andhighperformancenon-volatilememoryfabricatedbyCMOS | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY DESCRIPTION TheMITSUBISHIM6MGB/T162S4BVPisaStackedMultiChipPackage(S-MCP)thatcontents16M-bitsflashmemoryand4M-bitsStaticRAMina48-pinTSOP(TYPE-I). 16M-bitsFlashmemoryisa1048576words,3.3V-only,andhighperformancenon-volatilememoryfabricatedbyCMOStechnologyfor | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY DESCRIPTION TheMITSUBISHIM6MGB/T166S2BWGisaStackedChipScalePackage(S-CSP)thatcontents16M-bitsflashmemoryand2M-bitsStaticRAMina72-pinS-CSP. 16M-bitsFlashmemoryisa1,048,576words,3.3V-only,andhighperformancenon-volatilememoryfabricatedbyCMOStechnologyforthep | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY DESCRIPTION TheMITSUBISHIM6MGB/T166S4BWGisaStackedChipScalePackage(S-CSP)thatcontents16M-bitsflashmemoryand4M-bitsStaticRAMina72-pinS-CSP. 16M-bitsFlashmemoryisa1,048,576words,3.3V-only,andhighperformancenon-volatilememoryfabricatedbyCMOStechnologyforthep | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B Description TheM6MGB/T331S4BKTisaStackedmicroMultiChipPackage(S-mMCP)thatcontents32M-bitFlashmemoryand4M-bitStaticRAMina52-pinTSOPforleadfreeuse. 32M-bitFlashmemoryisa4,194,304bytes/2,097,152words,3.3V-only,andhighperformancenon-volatilememoryfabricated | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 |  | | |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI Description TheM6MGB/T331S8AKTisaStackedmicroMultiChipPackage(S-mMCP)thatcontents32M-bitFlashmemoryand8M-bitStaticRAMina52-pinTSOPforleadfreeuse. 32M-bitFlashmemoryisa4,194,304bytes/2,097,152words,,singlepowersupplyandhighperformancenon-volatilememory | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY DESCRIPTION TheMITSUBISHIM6MGB/T160S2BVPisaStackedMultiChipPackage(S-MCP)thatcontents16M-bitsflashmemoryand2M-bitsStaticRAMina48-pinTSOP(TYPE-I). FEATURES •Accesstime FlashMemory90ns(Max.) S | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY DESCRIPTION TheMITSUBISHIM6MGB/T160S4BVPisaStackedMultiChipPackage(S-MCP)thatcontents16M-bitsflashmemoryand4M-bitsStaticRAMina48-pinTSOP(TYPE-I). 16M-bitsFlashmemoryisa2097152bytes/1048576words3.3V-only,andhighperformancenon-volatilememoryfabricatedbyCMOS | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY DESCRIPTION TheMITSUBISHIM6MGB/T162S4BVPisaStackedMultiChipPackage(S-MCP)thatcontents16M-bitsflashmemoryand4M-bitsStaticRAMina48-pinTSOP(TYPE-I). 16M-bitsFlashmemoryisa1048576words,3.3V-only,andhighperformancenon-volatilememoryfabricatedbyCMOStechnologyfor | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY DESCRIPTION TheMITSUBISHIM6MGB/T166S2BWGisaStackedChipScalePackage(S-CSP)thatcontents16M-bitsflashmemoryand2M-bitsStaticRAMina72-pinS-CSP. 16M-bitsFlashmemoryisa1,048,576words,3.3V-only,andhighperformancenon-volatilememoryfabricatedbyCMOStechnologyforthep | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY DESCRIPTION TheMITSUBISHIM6MGB/T166S4BWGisaStackedChipScalePackage(S-CSP)thatcontents16M-bitsflashmemoryand4M-bitsStaticRAMina72-pinS-CSP. 16M-bitsFlashmemoryisa1,048,576words,3.3V-only,andhighperformancenon-volatilememoryfabricatedbyCMOStechnologyforthep | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B Description TheM6MGB/T331S4BKTisaStackedmicroMultiChipPackage(S-mMCP)thatcontents32M-bitFlashmemoryand4M-bitStaticRAMina52-pinTSOPforleadfreeuse. 32M-bitFlashmemoryisa4,194,304bytes/2,097,152words,3.3V-only,andhighperformancenon-volatilememoryfabricated | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI Description TheM6MGB/T331S8AKTisaStackedmicroMultiChipPackage(S-mMCP)thatcontents32M-bitFlashmemoryand8M-bitStaticRAMina52-pinTSOPforleadfreeuse. 32M-bitFlashmemoryisa4,194,304bytes/2,097,152words,,singlepowersupplyandhighperformancenon-volatilememory | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY 文件：247.35 Kbytes Page：29 Pages | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI 文件：128.669 Kbytes Page：3 Pages | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM 文件：124 Kbytes Page：3 Pages | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM 文件：136.75 Kbytes Page：3 Pages | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM 文件：125.06 Kbytes Page：3 Pages | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY 文件：247.35 Kbytes Page：29 Pages | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI 文件：128.669 Kbytes Page：3 Pages | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
24+ |
NA/ |
4290 |
原装现货,当天可交货,原型号开票 |
|||
MIT |
23+ |
TSOP48 |
20000 |
全新原装假一赔十 |
|||
MIT |
TSOP48 |
18 |
全新原装进口自己库存优势 |
||||
MIT |
2450+ |
TSSOP |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
MIT |
01+ |
TSSOP |
116 |
原装现货 |
|||
MIT |
22+ |
TSSOP |
3000 |
原装正品,支持实单 |
|||
MIT |
25+ |
QFP |
3200 |
全新原装、诚信经营、公司现货销售! |
|||
MIT |
24+ |
TSOP |
6980 |
原装现货,可开13%税票 |
|||
MIT |
23+ |
TSSOP/52 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
|||
MIT |
23+ |
TSSOP |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
M6MG芯片相关品牌
M6MG规格书下载地址
M6MG参数引脚图相关
- msm8625q
- msm7227a
- MP4
- MP3
- mos晶体管
- mos管
- MOSFET
- molex连接器
- mega16
- MCU
- mc34063
- mb881
- mb402
- max7219
- max706s
- max485esa
- max485csa
- max3232cse
- max232cse
- max232
- M7040N
- M7020R
- M7010R
- M7006-1
- M7006
- M7003
- M6XTC
- M6-T3
- M6-T1
- M6SVS
- M6SVF
- M6SSN
- M6-SMA
- M6-PJ
- M6NXU
- M6NXT
- M6NXR
- M6NXM
- M6NPP
- M6NPA
- M6MGT32BS4WG
- M6MGT166S4BWG
- M6MGT166S2BWG
- M6MGT162S4BVP
- M6MGT162S2BVP
- M6MGT160S4BVP
- M6MGT160S2BVP
- M6MGD13TW66CWG-P
- M6MGD13TW34DWG
- M6MGD137W34DWG
- M6MGB331S8BKT
- M6MGB331S8AKT
- M6MGB331S4BKT
- M6MGB166S4BWG
- M6MGB166S2BWG
- M6MGB162S4BVP
- M6MGB162S2BVP
- M6MGB160S4BVP
- M6MGB160S2BVP
- M6MGB
- M6MFT16S2TP
- M6MFB16S2TP
- M6MF16S2AVP
- M6M80041P
- M6M80041FP
- M6M80041
- M6M80021P
- M6M80021FP
- M6M80021
- M6M80011L
- M6M80011FP
- M6M80011AP
- M6M80011
- M6-LFR
- M6HC/R0F 3.5 F1LK0 R1VNUT
- M6G0806N
- M6G0406S
- M6G0312S
- M6G0312N
- M6G0212S
- M6G0212N
- M6EH_15
- M6E-50
- M6DXR
- M6DXM
- M6DXF3
- M6DXF2
- M6DXF1
- M6DXAT
- M6DXAS
- M6D-50
- M692SDM
- M690SDM
- M68Z512
- M68Z128
- M68SDIL
- M68HC12
- M68HC11
- M68HC08
- M68HC05
M6MG数据表相关新闻
M67N68G-TO220F3T-TG
M67N68G-TO220F3T-TG
2023-1-31M7
国产TOSHIBA/东芝现货900K
2022-7-5M74HC112B1R ST
www.hfxcom.com
2021-11-8M67741L-01，M67749H，M67759，M67779L，M67799HA，M685-02-AD-A
M67741L-01，M67749H，M67759，M67779L，M67799HA，M685-02-AD-A
2020-3-28M74ACT251D，M74HC390D，M74VHC1GT00DTT1G，MAC15A10，MAC15A10FP，MAC15SM，MAC212A10，MAC212A10FP，MAC212A6FP，M1MA141KT1，M1MA141WAT1，M1MA141WKT1，M1MA142WAT1G，M1MA151AT1G，M1MA151KT1G
M74ACT251D，M74HC390D，M74VHC1GT00DTT1G，MAC15A10，MAC15A10FP，MAC15SM，MAC212A10，MAC212A10FP，MAC212A6FP，M1MA141KT1，M1MA141WAT1，M1MA141WKT1，M1MA142WAT1G，M1MA151AT1G，M1MA151KT1G
2019-12-14M672ZA1BD-1/BGA封装/现货供应
M672ZA1BD-1
2019-11-20
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
