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型号 功能描述 生产厂家&企业 LOGO 操作
M6MGB160S2BVP

16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY

DESCRIPTION TheMITSUBISHIM6MGB/T160S2BVPisaStackedMultiChipPackage(S-MCP)thatcontents16M-bitsflashmemoryand2M-bitsStaticRAMina48-pinTSOP(TYPE-I). FEATURES •Accesstime FlashMemory90ns(Max.) S

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M6MGB160S4BVP

16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY

DESCRIPTION TheMITSUBISHIM6MGB/T160S4BVPisaStackedMultiChipPackage(S-MCP)thatcontents16M-bitsflashmemoryand4M-bitsStaticRAMina48-pinTSOP(TYPE-I). 16M-bitsFlashmemoryisa2097152bytes/1048576words3.3V-only,andhighperformancenon-volatilememoryfabricatedbyCMOS

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M6MGB162S4BVP

16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY

DESCRIPTION TheMITSUBISHIM6MGB/T162S4BVPisaStackedMultiChipPackage(S-MCP)thatcontents16M-bitsflashmemoryand4M-bitsStaticRAMina48-pinTSOP(TYPE-I). 16M-bitsFlashmemoryisa1048576words,3.3V-only,andhighperformancenon-volatilememoryfabricatedbyCMOStechnologyfor

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M6MGB166S2BWG

16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY

DESCRIPTION TheMITSUBISHIM6MGB/T166S2BWGisaStackedChipScalePackage(S-CSP)thatcontents16M-bitsflashmemoryand2M-bitsStaticRAMina72-pinS-CSP. 16M-bitsFlashmemoryisa1,048,576words,3.3V-only,andhighperformancenon-volatilememoryfabricatedbyCMOStechnologyforthep

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M6MGB166S4BWG

16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY

DESCRIPTION TheMITSUBISHIM6MGB/T166S4BWGisaStackedChipScalePackage(S-CSP)thatcontents16M-bitsflashmemoryand4M-bitsStaticRAMina72-pinS-CSP. 16M-bitsFlashmemoryisa1,048,576words,3.3V-only,andhighperformancenon-volatilememoryfabricatedbyCMOStechnologyforthep

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M6MGB331S4BKT

33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B

Description TheM6MGB/T331S4BKTisaStackedmicroMultiChipPackage(S-mMCP)thatcontents32M-bitFlashmemoryand4M-bitStaticRAMina52-pinTSOPforleadfreeuse. 32M-bitFlashmemoryisa4,194,304bytes/2,097,152words,3.3V-only,andhighperformancenon-volatilememoryfabricated

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M6MGB331S8AKT

33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI

Description TheM6MGB/T331S8AKTisaStackedmicroMultiChipPackage(S-mMCP)thatcontents32M-bitFlashmemoryand8M-bitStaticRAMina52-pinTSOPforleadfreeuse. 32M-bitFlashmemoryisa4,194,304bytes/2,097,152words,,singlepowersupplyandhighperformancenon-volatilememory

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M6MGT160S2BVP

16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY

DESCRIPTION TheMITSUBISHIM6MGB/T160S2BVPisaStackedMultiChipPackage(S-MCP)thatcontents16M-bitsflashmemoryand2M-bitsStaticRAMina48-pinTSOP(TYPE-I). FEATURES •Accesstime FlashMemory90ns(Max.) S

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M6MGT160S4BVP

16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY

DESCRIPTION TheMITSUBISHIM6MGB/T160S4BVPisaStackedMultiChipPackage(S-MCP)thatcontents16M-bitsflashmemoryand4M-bitsStaticRAMina48-pinTSOP(TYPE-I). 16M-bitsFlashmemoryisa2097152bytes/1048576words3.3V-only,andhighperformancenon-volatilememoryfabricatedbyCMOS

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M6MGT162S4BVP

16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY

DESCRIPTION TheMITSUBISHIM6MGB/T162S4BVPisaStackedMultiChipPackage(S-MCP)thatcontents16M-bitsflashmemoryand4M-bitsStaticRAMina48-pinTSOP(TYPE-I). 16M-bitsFlashmemoryisa1048576words,3.3V-only,andhighperformancenon-volatilememoryfabricatedbyCMOStechnologyfor

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M6MGT166S2BWG

16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY

DESCRIPTION TheMITSUBISHIM6MGB/T166S2BWGisaStackedChipScalePackage(S-CSP)thatcontents16M-bitsflashmemoryand2M-bitsStaticRAMina72-pinS-CSP. 16M-bitsFlashmemoryisa1,048,576words,3.3V-only,andhighperformancenon-volatilememoryfabricatedbyCMOStechnologyforthep

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M6MGT166S4BWG

16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY

DESCRIPTION TheMITSUBISHIM6MGB/T166S4BWGisaStackedChipScalePackage(S-CSP)thatcontents16M-bitsflashmemoryand4M-bitsStaticRAMina72-pinS-CSP. 16M-bitsFlashmemoryisa1,048,576words,3.3V-only,andhighperformancenon-volatilememoryfabricatedbyCMOStechnologyforthep

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M6MGT331S4BKT

33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B

Description TheM6MGB/T331S4BKTisaStackedmicroMultiChipPackage(S-mMCP)thatcontents32M-bitFlashmemoryand4M-bitStaticRAMina52-pinTSOPforleadfreeuse. 32M-bitFlashmemoryisa4,194,304bytes/2,097,152words,3.3V-only,andhighperformancenon-volatilememoryfabricated

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M6MGT331S8AKT

33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI

Description TheM6MGB/T331S8AKTisaStackedmicroMultiChipPackage(S-mMCP)thatcontents32M-bitFlashmemoryand8M-bitStaticRAMina52-pinTSOPforleadfreeuse. 32M-bitFlashmemoryisa4,194,304bytes/2,097,152words,,singlepowersupplyandhighperformancenon-volatilememory

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M6MGB162S2BVP

16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY

文件：247.35 Kbytes Page：29 Pages

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M6MGB331S8BKT

33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI

文件：128.669 Kbytes Page：3 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M6MGD137W34DWG

134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM

文件：124 Kbytes Page：3 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M6MGD13TW34DWG

134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM

文件：136.75 Kbytes Page：3 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M6MGD13TW66CWG-P

134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM

文件：125.06 Kbytes Page：3 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M6MGT162S2BVP

16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY

文件：247.35 Kbytes Page：29 Pages

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M6MGT331S8BKT

33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI

文件：128.669 Kbytes Page：3 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

M6MG供应商更多...

更新时间：2025-7-24 16:52:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市得捷芯城科技有限公司
M6MGB331S8KT
RENESAS/瑞萨
24+
NA/
4290
原装现货,当天可交货,原型号开票
询价
深圳市欧立现代科技有限公司
M6MGB321S4TP
MIT
24+
TSOP
6980
原装现货,可开13%税票
询价
深圳市赛美科科技有限公司
M6MGB162S4BVP
MITSUBIS
TSSOP48
6500
一级代理 原装正品假一罚十价格优势长期供货
询价
深圳市胜彬电子有限公司
M6MGB331S8KT
MIT
22+
TSSOP
3000
原装正品,支持实单
询价
深圳市恒达亿科技有限公司
M6MGB321S4TP
MIT
25+
QFP
3200
全新原装、诚信经营、公司现货销售!
询价
贸泽芯城（深圳）电子科技有限公司
M6MGB162
MIT
23+
TSSOP
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
深圳市毅创腾电子科技有限公司
M6MGB331-S8KT
MIT
23+
TSSOP/52
7000
绝对全新原装!100%保质量特价!请放心订购!
询价
深圳市宏世佳电子科技有限公司
M6MGB321S4TPM03S
MITSUBISHI
2025+
TSOP-52
3550
全新原厂原装产品、公司现货销售
询价
深圳市豪迈兴电子有限公司
M6MGB321S4TP
MIT
24+
TSSOP
5632
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
上海意淼电子科技有限公司
M6MGB162S4BVP
MIT
23+
TSOP48
20000
全新原装假一赔十
询价

M6MG芯片相关品牌

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  • POWERDYNAMICS
  • RHOMBUS-IND
  • TELEDYNE
  • YAMAICHI

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