型号 功能描述 生产厂家&企业 LOGO 操作

16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY

DESCRIPTION TheMITSUBISHIM6MGB/T160S2BVPisaStackedMultiChipPackage(S-MCP)thatcontents16M-bitsflashmemoryand2M-bitsStaticRAMina48-pinTSOP(TYPE-I). FEATURES •Accesstime FlashMemory90ns(Max.) S

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY

DESCRIPTION TheMITSUBISHIM6MGB/T160S4BVPisaStackedMultiChipPackage(S-MCP)thatcontents16M-bitsflashmemoryand4M-bitsStaticRAMina48-pinTSOP(TYPE-I). 16M-bitsFlashmemoryisa2097152bytes/1048576words3.3V-only,andhighperformancenon-volatilememoryfabricatedbyCMOS

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY

DESCRIPTION TheMITSUBISHIM6MGB/T162S4BVPisaStackedMultiChipPackage(S-MCP)thatcontents16M-bitsflashmemoryand4M-bitsStaticRAMina48-pinTSOP(TYPE-I). 16M-bitsFlashmemoryisa1048576words,3.3V-only,andhighperformancenon-volatilememoryfabricatedbyCMOStechnologyfor

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY

DESCRIPTION TheMITSUBISHIM6MGB/T166S2BWGisaStackedChipScalePackage(S-CSP)thatcontents16M-bitsflashmemoryand2M-bitsStaticRAMina72-pinS-CSP. 16M-bitsFlashmemoryisa1,048,576words,3.3V-only,andhighperformancenon-volatilememoryfabricatedbyCMOStechnologyforthep

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY

DESCRIPTION TheMITSUBISHIM6MGB/T166S4BWGisaStackedChipScalePackage(S-CSP)thatcontents16M-bitsflashmemoryand4M-bitsStaticRAMina72-pinS-CSP. 16M-bitsFlashmemoryisa1,048,576words,3.3V-only,andhighperformancenon-volatilememoryfabricatedbyCMOStechnologyforthep

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B

Description TheM6MGB/T331S4BKTisaStackedmicroMultiChipPackage(S-mMCP)thatcontents32M-bitFlashmemoryand4M-bitStaticRAMina52-pinTSOPforleadfreeuse. 32M-bitFlashmemoryisa4,194,304bytes/2,097,152words,3.3V-only,andhighperformancenon-volatilememoryfabricated

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI

Description TheM6MGB/T331S8AKTisaStackedmicroMultiChipPackage(S-mMCP)thatcontents32M-bitFlashmemoryand8M-bitStaticRAMina52-pinTSOPforleadfreeuse. 32M-bitFlashmemoryisa4,194,304bytes/2,097,152words,,singlepowersupplyandhighperformancenon-volatilememory

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY

DESCRIPTION TheMITSUBISHIM6MGB/T160S2BVPisaStackedMultiChipPackage(S-MCP)thatcontents16M-bitsflashmemoryand2M-bitsStaticRAMina48-pinTSOP(TYPE-I). FEATURES •Accesstime FlashMemory90ns(Max.) S

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY

DESCRIPTION TheMITSUBISHIM6MGB/T160S4BVPisaStackedMultiChipPackage(S-MCP)thatcontents16M-bitsflashmemoryand4M-bitsStaticRAMina48-pinTSOP(TYPE-I). 16M-bitsFlashmemoryisa2097152bytes/1048576words3.3V-only,andhighperformancenon-volatilememoryfabricatedbyCMOS

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY

DESCRIPTION TheMITSUBISHIM6MGB/T162S4BVPisaStackedMultiChipPackage(S-MCP)thatcontents16M-bitsflashmemoryand4M-bitsStaticRAMina48-pinTSOP(TYPE-I). 16M-bitsFlashmemoryisa1048576words,3.3V-only,andhighperformancenon-volatilememoryfabricatedbyCMOStechnologyfor

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY

DESCRIPTION TheMITSUBISHIM6MGB/T166S2BWGisaStackedChipScalePackage(S-CSP)thatcontents16M-bitsflashmemoryand2M-bitsStaticRAMina72-pinS-CSP. 16M-bitsFlashmemoryisa1,048,576words,3.3V-only,andhighperformancenon-volatilememoryfabricatedbyCMOStechnologyforthep

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY

DESCRIPTION TheMITSUBISHIM6MGB/T166S4BWGisaStackedChipScalePackage(S-CSP)thatcontents16M-bitsflashmemoryand4M-bitsStaticRAMina72-pinS-CSP. 16M-bitsFlashmemoryisa1,048,576words,3.3V-only,andhighperformancenon-volatilememoryfabricatedbyCMOStechnologyforthep

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B

Description TheM6MGB/T331S4BKTisaStackedmicroMultiChipPackage(S-mMCP)thatcontents32M-bitFlashmemoryand4M-bitStaticRAMina52-pinTSOPforleadfreeuse. 32M-bitFlashmemoryisa4,194,304bytes/2,097,152words,3.3V-only,andhighperformancenon-volatilememoryfabricated

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI

Description TheM6MGB/T331S8AKTisaStackedmicroMultiChipPackage(S-mMCP)thatcontents32M-bitFlashmemoryand8M-bitStaticRAMina52-pinTSOPforleadfreeuse. 32M-bitFlashmemoryisa4,194,304bytes/2,097,152words,,singlepowersupplyandhighperformancenon-volatilememory

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY

文件:247.35 Kbytes Page:29 Pages

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI

文件:128.669 Kbytes Page:3 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM

文件:124 Kbytes Page:3 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM

文件:136.75 Kbytes Page:3 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM

文件:125.06 Kbytes Page:3 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY

文件:247.35 Kbytes Page:29 Pages

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI

文件:128.669 Kbytes Page:3 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
更新时间:2025-7-31 9:16:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MITSUBISHI
2025+
TSOP-52
3550
全新原厂原装产品、公司现货销售
MIT
25+
QFP
3200
全新原装、诚信经营、公司现货销售!
23+
TSSOP
11
现货库存
MIT
24+
TSSOP
23000
只做正品原装现货
MITSUBISHI
23+
NA
25060
只做进口原装,终端工厂免费送样
MIT
24+
TSSOP
5632
公司原厂原装现货假一罚十!特价出售!强势库存!
MIT
24+
TSOP
6980
原装现货,可开13%税票
MIT
22+
TSSOP
3000
原装正品,支持实单
三凌
23+
TSSOP
89630
当天发货全新原装现货
MIT
TSOP48
18
全新原装进口自己库存优势

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