DualCommonCathodeSchottkyRectifier

FEATURES •Powerpack •Guardringforovervoltageprotection •Lowpowerlosses,highefficiency •Lowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pl

DualCommon-CathodeSchottkyRectifier

文件：114.56 Kbytes Page：5 Pages

DualCommon-CathodeSchottkyRectifier

文件：93.23 Kbytes Page：6 Pages

DualCommon-CathodeSchottkyRectifier

文件：114.56 Kbytes Page：5 Pages

封装/外壳：TO-3P-3，SC-65-3 包装：管件 描述：DIODE ARRAY SCHOTTKY 45V TO3P 分立半导体产品 二极管 - 整流器 - 阵列

DualCommon-CathodeSchottkyRectifier

文件：114.56 Kbytes Page：5 Pages

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=14.5A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.45Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=17A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.45Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=17A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.45Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

SINGLEPOLE,SINGLETHROWCONNECTORIZEDSWITCHES

文件：40.48 Kbytes Page：1 Pages