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型号	功能描述	生产厂家&企业
M5M51008BFP	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008BFP-10VL	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008BFP-10VLL	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008BFP-12VL	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008BFP-12VLL	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008BFP-15VL	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008BFP-15VLL	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008BFP-70VL	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008BFP-70VLL	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008BKR-10VL	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008BKR-10VLL	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008BKR-12VL	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008BKR-12VLL	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008BKR-15VL	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008BKR-15VLL	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008BKR-70VL	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008BKR-70VLL	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008BKV-10VL	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008BKV-10VLL	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008BKV-12VL	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008BKV-12VLL	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008BKV-15VL	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008BKV-15VLL	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008BKV-70VL	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008BKV-70VLL	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008BRV-10VL	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008BRV-10VLL	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008BRV-12VL	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008BRV-12VLL	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008BRV-15VL	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008BRV-15VLL	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008BRV-70VL	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008BRV-70VLL	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008BVP-10VL	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008BVP-10VLL	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008BVP-12VL	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008BVP-12VLL	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008BVP-15VL	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008BVP-15VLL	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008BVP-70VL	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008BVP-70VLL	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008CCP-55H	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008CCP-55X	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008CCP-70H	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008CCP-70X	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008CFP	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008CFP-55H	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008CFP-55X	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008CFP-70H	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008CFP-70X	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008CKR-55	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008CKR-55H	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008CKR-55X	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008CKR-70	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008CKR-70H	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008CKR-70X	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008CKV	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008CKV-55H	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008CKV-55X	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M51008CKV-70H	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社

M5M51008产品属性

类型
描述
型号
M5M51008
制造商
Mitsubishi Electric
功能描述
Static RAM, 128Kx8, 32 Pin, Plastic, SOP

M5M51008供应商更多...

更新时间：2025-7-30 20:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	M5M51008P-70	MIT	24+	NA/	3260	原装现货,当天可交货,原型号开票	询价
深圳市威雅利发展有限公司	M5M51008P-10L	MITEL	9221	PDIP32	62	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市英科美电子有限公司	M5M51008P-70L	MITSUBIS	2223+	DIP-32	26800	只做原装正品假一赔十为客户做到零风险	询价
深圳市昊创电子有限公司	M5M51008P-10L	RENESAS/MITSUBISH	1824+	DIP	5000	原装现货专业代理,可以代拷程序	询价
深圳市胜彬电子有限公司	M5M51008P-10L	MITSUBIS	22+	DIP32	3000	原装正品,支持实单	询价
深圳市恒达亿科技有限公司	M5M51008P-10L	MITSUBISHI	25+	DIP	3200	全新原装、诚信经营、公司现货销售!	询价
深圳市富诚威科技有限公司	M5M51008KV-70H	MIT	24+	TSSOP-32	3200	十年品牌!原装现货!!!	询价
标准国际(香港)有限公司	M5M51008P-10	Mitsubshi			2	公司优势库存热卖中!!	询价
深圳市向鸿伟业电子有限公司	M5M51008P-10L	MIT	2402+	DIP32	8324	原装正品!实单价优!	询价
贸泽芯城（深圳）电子科技有限公司	M5M51008P-10L-W	MIT	23+	DIP-32	13000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价

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M5M51008产品属性

M5M51008供应商更多...

M5M51008芯片相关品牌

M5M51008规格书下载地址

M5M51008参数引脚图相关

M5M51008数据表相关新闻

M5838

M5836

M62342HP

M61880FP

M5677-ALAA 进口原装，主营军工级IC

M61RB，M61SAL108B，M62216FP，M62339FP

DdatasheetPDF页码索引