1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION\nThe M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are\nfabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. The Package\nLow stand-by current 0.3µA (typ.)\nDirectly TTL compatible : All inputs and outputs\nEasy memory expansion and power down by S1,S2\nData hold on +2V power supply\nThree-state outputs : OR - tie capability\nOE prevents data contention in the I/O bus\nCommon data I/O\nM5M51008BFP  ···········;

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de