位置：首页 > IC中文资料第9973页 > M59DR032E-ZBT
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M59DR032E-ZBT | 32Mbit(2Mbx16,DualBank,Page)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM59DR032Eisa32Mbit(2Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto2.2VVDDQsupplyfortheInput/Outputpins.Anopt | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  |   |
32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
M59DR032E-ZBT产品属性
- 类型
描述
- 型号
M59DR032E-ZBT
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
32 Mbit(2Mb x 16, Dual Bank, Page ) 1.8V Supply Flash Memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
589220 |
16余年资质 绝对原盒原盘 更多数量 |
|||||
ST |
BGA |
93480 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
ST |
23+ |
BGA |
5000 |
原装正品,假一罚十 |
|||
ST/意法 |
24+ |
NA |
990000 |
明嘉莱只做原装正品现货 |
|||
ST |
2021+ |
BGA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ST/意法 |
2406+ |
BGA |
11260 |
诚信经营!进口原装!量大价优! |
|||
ST |
22+ |
QFN |
32350 |
原装正品 假一罚十 公司现货 |
|||
ST |
2005 |
BGA |
28 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST |
2339+ |
BGA |
5632 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
3000 |
公司存货 |
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M59DR032E-ZBT规格书下载地址
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DdatasheetPDF页码索引
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