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位置：首页 > IC中文资料第11738页 > M59DR032A

型号 功能描述 生产厂家&企业 LOGO 操作
M59DR032A

32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory

DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR032A100N1T

32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory

DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR032A100N6T

32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory

DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR032A100ZB1T

32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory

DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR032A100ZB6T

32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory

DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR032A120N1T

32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory

DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR032A120N6T

32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory

DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR032A120ZB1T

32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory

DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR032A120ZB6T

32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory

DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR032AN

32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory

DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR032AZB

32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory

DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR032B

32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory

DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR032BN

32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory

DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

M59DR032A产品属性

  • 类型

    描述

  • 型号

    M59DR032A

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory

M59DR032A供应商更多...

更新时间：2025-7-31 11:36:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市恒达亿科技有限公司
M59DR032A
ST
25+
BGA
3000
全新原装、诚信经营、公司现货销售!
询价
上海意淼电子科技有限公司
M59DR032EALDZB6
ST
23+
BGA
12000
全新原装假一赔十
询价
深圳市卓越微芯电子有限公司
M59DR032A
ST
2020+
BGA
4500
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
贸泽芯城（深圳）电子科技有限公司
M59DR032A120ZB6
ST/意法
23+
BGA
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
艾睿（深圳）半导体有限公司
M59DR032EA10ZB6
ST
2447
BGA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
深圳市安富世纪电子有限公司
M59DR032EA10ZB6
ST
23+
48TFBGA (7x12)
8000
只做原装现货
询价
深圳市华斯顿科技有限公司
M59DR032A120ZB6T
ST
25+23+
BGA
35947
绝对原装正品全新进口深圳现货
询价
华富测量(深圳)传感技术有限公司
M59DR032A
ST
2138+
BGA
8960
专营BGA,QFP原装现货,假一赔十
询价
深圳市科恒伟业电子有限公司
M59DR032A120ZB6
ST/意法
2450+
BGA
6540
原装现货或订发货1-2周
询价
深圳市河锋鑫科技有限公司
M59DR032EA10ZB6
ST
22+
48TFBGA (7x12)
9000
原厂渠道,现货配单
询价

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