位置：首页 > IC中文资料第9973页 > M59DR032E-ZBF
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M59DR032E-ZBF | 32Mbit(2Mbx16,DualBank,Page)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM59DR032Eisa32Mbit(2Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto2.2VVDDQsupplyfortheInput/Outputpins.Anopt | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  |   |
32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
M59DR032E-ZBF产品属性
- 类型
描述
- 型号
M59DR032E-ZBF
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
32 Mbit(2Mb x 16, Dual Bank, Page ) 1.8V Supply Flash Memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
22 |
QFN |
25000 |
3月31原装,微信报价 |
|||
ST |
2005 |
BGA |
28 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST |
23+ |
BGA |
18000 |
||||
ST |
BGA |
93480 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
ST |
BGA |
6000 |
原装现货,长期供应,终端可账期 |
||||
ST/意法 |
24+ |
NA |
990000 |
明嘉莱只做原装正品现货 |
|||
ST/意法 |
23+ |
BGA |
10880 |
原装正品，支持实单 |
|||
ST/意法 |
2022 |
BGA |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
ST |
589220 |
16余年资质 绝对原盒原盘 更多数量 |
|||||
ST |
23+ |
BGA |
3200 |
全新原装、诚信经营、公司现货销售! |
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M59DR032E-ZBF规格书下载地址
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DdatasheetPDF页码索引
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