位置：首页 > IC中文资料第11195页 > M58BW016DB
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
M58BW016DB | 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally | STMICROELECTRONICS 意法半导体 |   | |
M58BW016DB | 16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories Description The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16 Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the inp | STMICROELECTRONICS 意法半导体 | | |
M58BW016DB | 16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories Description The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16-Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the inp | NUMONYX | | |
M58BW016DB | 16 Mbit (512 Kbit x 32, boot block, burst) Description The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16-Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the inp | Micron 美光 | | |
M58BW016DB | 16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories | Micron 美光 | | |
16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories Description The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16 Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the inp | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories Description The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16 Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the inp | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories Description The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16 Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the inp | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories Description The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16 Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the inp | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories Description The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16-Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the inp | NUMONYX | | ||
16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories Description The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16-Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the inp | NUMONYX | | ||
16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories Description The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16-Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the inp | NUMONYX | | ||
16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories Description The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16-Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the inp | NUMONYX | | ||
16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories Description The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16 Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the inp | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories Description The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16 Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the inp | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories Description The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16 Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the inp | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories Description The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16 Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the inp | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories Description The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16-Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the inp | NUMONYX | | ||
16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories Description The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16-Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the inp | NUMONYX | | ||
16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories Description The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16-Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the inp | NUMONYX | | ||
16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories Description The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16-Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the inp | NUMONYX | | ||
16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally | STMICROELECTRONICS 意法半导体 | |
M58BW016DB产品属性
- 类型
描述
- 型号
M58BW016DB
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
25+ |
QFP |
12496 |
ST/意法原装正品M58BW016DB70T3即刻询购立享优惠#长期有货 |
|||
ST |
0913+ |
PQFP80 |
10250 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST |
23+24 |
QFP |
9800 |
原装现货.优势热卖.终端BOM表可配单 |
|||
ST |
23+ |
QFP |
50000 |
只做原装正品 |
|||
ST |
18+ |
QFP80 |
12500 |
全新原装正品,本司专业配单,大单小单都配 |
|||
ST/意法 |
2517+ |
QFP |
8850 |
只做原装正品现货或订货假一赔十! |
|||
ST |
25+ |
BGA |
18000 |
原厂直接发货进口原装 |
|||
ST |
2006+ |
QFP-80 |
60 |
原装现货海量库存欢迎咨询 |
|||
ST/意法 |
24+ |
QFP |
880000 |
明嘉莱只做原装正品现货 |
|||
ST |
24+ |
QFP |
16800 |
绝对原装进口现货 假一赔十 价格优势!? |
M58BW016DB规格书下载地址
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