16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories

Description The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16 Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the inp

16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories

Description The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16 Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the inp

16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories

SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally