位置：首页 > IC中文资料第11737页 > M58BW016BT
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
M58BW016BT | 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally | STMICROELECTRONICS 意法半导体 |   | |
M58BW016BT | 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories | STMICROELECTRONICS 意法半导体 | | |
16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally | STMICROELECTRONICS 意法半导体 | |
M58BW016BT产品属性
- 类型
描述
- 型号
M58BW016BT
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
188 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST |
2016+ |
QFP |
6000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ST/意法 |
25+ |
QFP80 |
54658 |
百分百原装现货 实单必成 |
|||
ST/意法 |
22+ |
QFP80 |
100000 |
代理渠道/只做原装/可含税 |
|||
NS |
06+ |
QFP |
20 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
MITSUBIS |
NA |
5650 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ST/意法 |
2450+ |
PQFP80 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
ST |
20+ |
QFP |
500 |
样品可出,优势库存欢迎实单 |
|||
ST/意法 |
21+ |
QFP80 |
3000 |
百域芯优势 实单必成 可开13点增值税发票 |
|||
MITSUBIS |
23+ |
BGAQFP |
8659 |
原装公司现货!原装正品价格优势. |
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M58BW016BT规格书下载地址
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DdatasheetPDF页码索引
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