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M48Z512价格
参考价格：￥369.7688
型号：M48Z512AV-85PM1 品牌：STMicroelectronics 备注：这里有M48Z512多少钱，2025年最近7天走势，今日出价，今日竞价，M48Z512批发/采购报价，M48Z512行情走势销售排行榜，M48Z512报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
4 Mbit 512Kb x8 ZEROPOWER SRAM Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa | STMICROELECTRONICS 意法半导体 |   | ||
4 Mbit 512Kb x8 ZEROPOWER SRAM Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 ZEROPOWER SRAM Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 ZEROPOWER SRAM Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 ZEROPOWER SRAM Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 ZEROPOWER SRAM Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 ZEROPOWER SRAM Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 ZEROPOWER SRAM Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 ZEROPOWER SRAM Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 ZEROPOWER SRAM Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 ZEROPOWER SRAM Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 ZEROPOWER SRAM Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 ZEROPOWER SRAM Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 ZEROPOWER SRAM Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 ZEROPOWER SRAM Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 ZEROPOWER SRAM Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 ZEROPOWER SRAM Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 ZEROPOWER SRAM Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 ZEROPOWER SRAM Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 ZEROPOWER SRAM Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 ZEROPOWER SRAM Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 ZEROPOWER SRAM Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 ZEROPOWER SRAM Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 ZEROPOWER SRAM Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa | STMICROELECTRONICS 意法半导体 | | ||
3.3 V, 4 Mbit (512 K x 8 bit) ZEROPOWER SRAM Description The M48Z512BV ZEROPOWER® RAM is a nonvolatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra-low power SRAM, power-fail c | STMICROELECTRONICS 意法半导体 | | ||
3.3 V, 4 Mbit (512 K x 8 bit) ZEROPOWER SRAM Description The M48Z512BV ZEROPOWER® RAM is a nonvolatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra-low power SRAM, power-fail c | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 ZEROPOWER SRAM | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM 文件：341.84 Kbytes Page：21 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER SRAM 文件：252.31 Kbytes Page：24 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER SRAM 文件：252.31 Kbytes Page：24 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM 文件：341.84 Kbytes Page：21 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM 文件：341.84 Kbytes Page：21 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM 文件：341.84 Kbytes Page：21 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER SRAM 文件：252.31 Kbytes Page：24 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER SRAM 文件：252.31 Kbytes Page：24 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER SRAM 文件：252.31 Kbytes Page：24 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM 文件：341.84 Kbytes Page：21 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM 文件：341.84 Kbytes Page：21 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER SRAM 文件：252.31 Kbytes Page：24 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER SRAM 文件：252.31 Kbytes Page：24 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM 文件：341.84 Kbytes Page：21 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM 文件：341.84 Kbytes Page：21 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM 文件：341.84 Kbytes Page：21 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER SRAM 文件：252.31 Kbytes Page：24 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER SRAM 文件：252.31 Kbytes Page：24 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER SRAM 文件：252.31 Kbytes Page：24 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM 文件：341.84 Kbytes Page：21 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER SRAM 文件：252.31 Kbytes Page：24 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM 文件：341.84 Kbytes Page：21 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM 文件：341.84 Kbytes Page：21 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER SRAM 文件：252.31 Kbytes Page：24 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM 文件：341.84 Kbytes Page：21 Pages | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：32-DIP 模块（0.600"，15.24mm） 包装：管件 描述：IC NVSRAM 4MBIT PARALLEL 32PMDIP 集成电路（IC） 存储器 | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM 文件：341.84 Kbytes Page：21 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER SRAM 文件：252.31 Kbytes Page：24 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER SRAM 文件：252.31 Kbytes Page：24 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER SRAM 文件：252.31 Kbytes Page：24 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM 文件：341.84 Kbytes Page：21 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM 文件：341.84 Kbytes Page：21 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER SRAM 文件：252.31 Kbytes Page：24 Pages | STMICROELECTRONICS 意法半导体 | |
M48Z512产品属性
- 类型
描述
- 型号
M48Z512
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
4 Mbit(512 Kbit x 8) ZEROPOWER? SRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
20+ |
DIP |
67500 |
原装优势主营型号-可开原型号增税票 |
|||
ST |
25+ |
标准封装 |
18000 |
原厂直接发货进口原装 |
|||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ST |
25+23+ |
DIP |
40220 |
绝对原装正品全新进口深圳现货 |
|||
STMicroelectronics |
18+ |
ICNVSRAM4MBIT70NS32DIP |
6800 |
公司原装现货 |
|||
ST |
24+ |
DIP |
9630 |
我们只做原装正品现货!量大价优! |
|||
ST/意法 |
2450+ |
DIP |
6540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
STMicroelectronics |
24+ |
32-PMDIP |
56200 |
一级代理/放心采购 |
|||
ST |
23+ |
DIP |
5000 |
原装正品,假一罚十 |
|||
NA |
25+ |
NA |
3 |
全新原装正品支持含税 |
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DdatasheetPDF页码索引
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