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M48Z512A价格
参考价格：￥369.7688
型号：M48Z512AV-85PM1 品牌：STMicroelectronics 备注：这里有M48Z512A多少钱，2025年最近7天走势，今日出价，今日竞价，M48Z512A批发/采购报价，M48Z512A行情走势销售排行榜，M48Z512A报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
M48Z512A | 4 Mbit 512Kb x8 ZEROPOWER SRAM Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa | STMICROELECTRONICS 意法半导体 |   | |
M48Z512A | 4 Mbit (512 Kbit x 8) ZEROPOWER SRAM 文件：252.31 Kbytes Page：24 Pages | STMICROELECTRONICS 意法半导体 | | |
M48Z512A | 4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM 文件：341.84 Kbytes Page：21 Pages | STMICROELECTRONICS 意法半导体 | | |
M48Z512A | 4 Mbit 512Kb x8 ZEROPOWER SRAM | STMICROELECTRONICS 意法半导体 | | |
4 Mbit 512Kb x8 ZEROPOWER SRAM Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 ZEROPOWER SRAM Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 ZEROPOWER SRAM Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 ZEROPOWER SRAM Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 ZEROPOWER SRAM Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 ZEROPOWER SRAM Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 ZEROPOWER SRAM Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 ZEROPOWER SRAM Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 ZEROPOWER SRAM Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 ZEROPOWER SRAM Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 ZEROPOWER SRAM Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 ZEROPOWER SRAM Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 ZEROPOWER SRAM Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 ZEROPOWER SRAM Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 ZEROPOWER SRAM Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 ZEROPOWER SRAM Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 ZEROPOWER SRAM Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 ZEROPOWER SRAM Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 ZEROPOWER SRAM Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 ZEROPOWER SRAM Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 ZEROPOWER SRAM Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 ZEROPOWER SRAM Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 ZEROPOWER SRAM Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER SRAM 文件：252.31 Kbytes Page：24 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM 文件：341.84 Kbytes Page：21 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM 文件：341.84 Kbytes Page：21 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM 文件：341.84 Kbytes Page：21 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER SRAM 文件：252.31 Kbytes Page：24 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER SRAM 文件：252.31 Kbytes Page：24 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER SRAM 文件：252.31 Kbytes Page：24 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM 文件：341.84 Kbytes Page：21 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM 文件：341.84 Kbytes Page：21 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER SRAM 文件：252.31 Kbytes Page：24 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER SRAM 文件：252.31 Kbytes Page：24 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM 文件：341.84 Kbytes Page：21 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM 文件：341.84 Kbytes Page：21 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM 文件：341.84 Kbytes Page：21 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER SRAM 文件：252.31 Kbytes Page：24 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER SRAM 文件：252.31 Kbytes Page：24 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER SRAM 文件：252.31 Kbytes Page：24 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM 文件：341.84 Kbytes Page：21 Pages | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：32-DIP 模块（0.600"，15.24mm） 包装：托盘 描述：IC NVSRAM 4MBIT PARALLEL 32PMDIP 集成电路（IC） 存储器 | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM 文件：341.84 Kbytes Page：21 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER SRAM 文件：252.31 Kbytes Page：24 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER SRAM 文件：252.31 Kbytes Page：24 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM 文件：341.84 Kbytes Page：21 Pages | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：32-DIP 模块（0.600"，15.24mm） 包装：管件 描述：IC NVSRAM 4MBIT PARALLEL 32PMDIP 集成电路（IC） 存储器 | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM 文件：341.84 Kbytes Page：21 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM 文件：341.84 Kbytes Page：21 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER SRAM 文件：252.31 Kbytes Page：24 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER SRAM 文件：252.31 Kbytes Page：24 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM 文件：341.84 Kbytes Page：21 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER SRAM 文件：252.31 Kbytes Page：24 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM 文件：341.84 Kbytes Page：21 Pages | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (512 Kbit x 8) ZEROPOWER SRAM 文件：252.31 Kbytes Page：24 Pages | STMICROELECTRONICS 意法半导体 | |
M48Z512A产品属性
- 类型
描述
- 型号
M48Z512A
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
4 Mbit(512 Kbit x 8) ZEROPOWER? SRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
4942 |
原装现货,当天可交货,原型号开票 |
|||
ST意法半导体 |
23+ |
DIP-32 |
20000 |
全新原装假一赔十 |
|||
ST/意法 |
22+ |
DIP32 |
100000 |
代理渠道/只做原装/可含税 |
|||
ST/意法 |
25+ |
DIP32 |
54658 |
百分百原装现货 实单必成 |
|||
ST/意法 |
24+ |
DIP |
880000 |
明嘉莱只做原装正品现货 |
|||
ST |
20+ |
DIP |
67500 |
原装优势主营型号-可开原型号增税票 |
|||
STM |
01+ |
DIP32 |
115 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST/意法 |
23+ |
DIP |
8160 |
原厂原装 |
|||
st |
NEW |
32-DIPModul |
52744 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
M48Z512A规格书下载地址
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DdatasheetPDF页码索引
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