M48Z512A价格

参考价格:¥369.7688

型号:M48Z512AV-85PM1 品牌:STMicroelectronics 备注:这里有M48Z512A多少钱,2026年最近7天走势,今日出价,今日竞价,M48Z512A批发/采购报价,M48Z512A行情走势销售排行榜,M48Z512A报价。
型号 功能描述 生产厂家 企业 LOGO 操作
M48Z512A

4 Mbit 512Kb x8 ZEROPOWER SRAM

Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa

STMICROELECTRONICS

意法半导体

M48Z512A

4 Mbit (512 Kbit x 8) ZEROPOWER SRAM

文件:252.31 Kbytes Page:24 Pages

STMICROELECTRONICS

意法半导体

M48Z512A

4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM

文件:341.84 Kbytes Page:21 Pages

STMICROELECTRONICS

意法半导体

M48Z512A

4 Mbit 512Kb x8 ZEROPOWER SRAM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8 ZEROPOWER SRAM

Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8 ZEROPOWER SRAM

Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8 ZEROPOWER SRAM

Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8 ZEROPOWER SRAM

Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8 ZEROPOWER SRAM

Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8 ZEROPOWER SRAM

Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8 ZEROPOWER SRAM

Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8 ZEROPOWER SRAM

Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8 ZEROPOWER SRAM

Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8 ZEROPOWER SRAM

Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8 ZEROPOWER SRAM

Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8 ZEROPOWER SRAM

Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8 ZEROPOWER SRAM

Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8 ZEROPOWER SRAM

Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8 ZEROPOWER SRAM

Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8 ZEROPOWER SRAM

Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8 ZEROPOWER SRAM

Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8 ZEROPOWER SRAM

Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8 ZEROPOWER SRAM

Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8 ZEROPOWER SRAM

Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8 ZEROPOWER SRAM

Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8 ZEROPOWER SRAM

Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8 ZEROPOWER SRAM

Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa

STMICROELECTRONICS

意法半导体

4 Mbit (512 Kbit x 8) ZEROPOWER SRAM

文件:252.31 Kbytes Page:24 Pages

STMICROELECTRONICS

意法半导体

4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM

文件:341.84 Kbytes Page:21 Pages

STMICROELECTRONICS

意法半导体

4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM

文件:341.84 Kbytes Page:21 Pages

STMICROELECTRONICS

意法半导体

4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM

文件:341.84 Kbytes Page:21 Pages

STMICROELECTRONICS

意法半导体

4 Mbit (512 Kbit x 8) ZEROPOWER SRAM

文件:252.31 Kbytes Page:24 Pages

STMICROELECTRONICS

意法半导体

4 Mbit (512 Kbit x 8) ZEROPOWER SRAM

文件:252.31 Kbytes Page:24 Pages

STMICROELECTRONICS

意法半导体

4 Mbit (512 Kbit x 8) ZEROPOWER SRAM

文件:252.31 Kbytes Page:24 Pages

STMICROELECTRONICS

意法半导体

4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM

文件:341.84 Kbytes Page:21 Pages

STMICROELECTRONICS

意法半导体

4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM

文件:341.84 Kbytes Page:21 Pages

STMICROELECTRONICS

意法半导体

4 Mbit (512 Kbit x 8) ZEROPOWER SRAM

文件:252.31 Kbytes Page:24 Pages

STMICROELECTRONICS

意法半导体

4 Mbit (512 Kbit x 8) ZEROPOWER SRAM

文件:252.31 Kbytes Page:24 Pages

STMICROELECTRONICS

意法半导体

4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM

文件:341.84 Kbytes Page:21 Pages

STMICROELECTRONICS

意法半导体

4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM

文件:341.84 Kbytes Page:21 Pages

STMICROELECTRONICS

意法半导体

4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM

文件:341.84 Kbytes Page:21 Pages

STMICROELECTRONICS

意法半导体

4 Mbit (512 Kbit x 8) ZEROPOWER SRAM

文件:252.31 Kbytes Page:24 Pages

STMICROELECTRONICS

意法半导体

4 Mbit (512 Kbit x 8) ZEROPOWER SRAM

文件:252.31 Kbytes Page:24 Pages

STMICROELECTRONICS

意法半导体

4 Mbit (512 Kbit x 8) ZEROPOWER SRAM

文件:252.31 Kbytes Page:24 Pages

STMICROELECTRONICS

意法半导体

4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM

文件:341.84 Kbytes Page:21 Pages

STMICROELECTRONICS

意法半导体

封装/外壳:32-DIP 模块(0.600",15.24mm) 包装:托盘 描述:IC NVSRAM 4MBIT PARALLEL 32PMDIP 集成电路(IC) 存储器

STMICROELECTRONICS

意法半导体

4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM

文件:341.84 Kbytes Page:21 Pages

STMICROELECTRONICS

意法半导体

4 Mbit (512 Kbit x 8) ZEROPOWER SRAM

文件:252.31 Kbytes Page:24 Pages

STMICROELECTRONICS

意法半导体

4 Mbit (512 Kbit x 8) ZEROPOWER SRAM

文件:252.31 Kbytes Page:24 Pages

STMICROELECTRONICS

意法半导体

4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM

文件:341.84 Kbytes Page:21 Pages

STMICROELECTRONICS

意法半导体

封装/外壳:32-DIP 模块(0.600",15.24mm) 包装:管件 描述:IC NVSRAM 4MBIT PARALLEL 32PMDIP 集成电路(IC) 存储器

STMICROELECTRONICS

意法半导体

4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM

文件:341.84 Kbytes Page:21 Pages

STMICROELECTRONICS

意法半导体

4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM

文件:341.84 Kbytes Page:21 Pages

STMICROELECTRONICS

意法半导体

4 Mbit (512 Kbit x 8) ZEROPOWER SRAM

文件:252.31 Kbytes Page:24 Pages

STMICROELECTRONICS

意法半导体

4 Mbit (512 Kbit x 8) ZEROPOWER SRAM

文件:252.31 Kbytes Page:24 Pages

STMICROELECTRONICS

意法半导体

4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM

文件:341.84 Kbytes Page:21 Pages

STMICROELECTRONICS

意法半导体

4 Mbit (512 Kbit x 8) ZEROPOWER SRAM

文件:252.31 Kbytes Page:24 Pages

STMICROELECTRONICS

意法半导体

4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM

文件:341.84 Kbytes Page:21 Pages

STMICROELECTRONICS

意法半导体

4 Mbit (512 Kbit x 8) ZEROPOWER SRAM

文件:252.31 Kbytes Page:24 Pages

STMICROELECTRONICS

意法半导体

M48Z512A产品属性

  • 类型

    描述

  • 型号

    M48Z512A

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    4 Mbit(512 Kbit x 8) ZEROPOWER? SRAM

更新时间:2026-3-1 21:25:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
25+23+
DIP
40220
绝对原装正品全新进口深圳现货
ST/意法
2026+
DIP32
54658
百分百原装现货 实单必成
ST(意法半导体)
25+
N/A
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
STMicroelectronics
18500
全新原厂原装现货!受权代理!可送样可提供技术支持!
STM
01+
DIP32
115
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST/意法
2403+
DIP32
11809
原装现货!欢迎随时咨询!
ST(意法半导体)
25+
N/A
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
STM
24+
DIP32
5000
全新原装正品,现货销售
24+
3000
公司存货
ST
23+
DIP
5000
原装正品,假一罚十

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